Abstract: A method and apparatus for using fixed abrasive polishing pads that contain posts for chemical mechanical polishing (CMP). The posts have different shapes, different sizes, different heights, different materials, different distribution of abrasive particles and different process chemicals. This invention also includes preconditioning fixed abrasive articles comprising a plurality of posts so that the posts have equal heights above the backing to achieve a uniform texture. This invention relates to improvements with respect to in situ rate measurement (ISRM) devices. The invention resides in providing a mechanical means, such as a notch, to determine when approaching the end of the abrasive web roll. The invention resides in coding the web throughout its length to enable determining the location of different portions of the web. This invention resides in providing perforations in the sides or end of the web for improved handling.

Abstract: The present invention provides an apparatus for removing an edge bead from a substrate. The apparatus includes a substrate support member, a plurality of mounting posts positioned along a perimeter of the substrate support member, and a rigid annular capillary ring mounted to the plurality of mounting posts. The rigid annular capillary ring includes a substantially planar upper capillary surface and is configured to maintain the substantially planar capillary surface when attached to the mounting posts.

Abstract: A carrier head for chemical mechanical polishing, includes a base, a support structure attached to the base having a surface for contacting a substrate, and a retaining structure attached to the base to prevent the substrate from moving along the surface. The retaining structure and the surface define a cavity for receiving the substrate. The retaining structure includes an upper portion in contact with the base, a lower portion, and a vibration damper separating the upper portion and the lower portion. The vibration damper, the vibration damper includes a material that does not rebound to its original shape when subjected to a deformation.

Abstract: The present invention generally provides a system and apparatus for cleaning a polishing pad, such as a fixed abrasive pad, in a substrate processing system. In one embodiment, the system includes one or more nozzles which spray a fluid at pressures of about 30 psi to about 300 psi or greater, as measured at the nozzle, onto a polishing pad at acute angles to the surface of the polishing pad. The nozzles can spray downward and outward toward the perimeter of the pad to facilitate the debris removal therefrom. The system can include a pressure source to produce a sufficient fluid pressure substantially higher than the typical fluid pressure available from a facility installation.

Abstract: Deposited Cu is initially removed by CMP with fixed abrasive polishing pads stopping on the barrier layer, e.g., Ta or TaN. Buffing is then conducted selectively with respect to Cu: Ta or TaN and Cu: silicon oxide to remove the barrier layer and control dishing to no greater than 100 Å.

Abstract: Embodiments of the invention generally provide a waveform to be applied to a seed layer prior to initiating plating operations, wherein the waveform is configured to remove organic contaminants from the seed layer. The application of the waveform generally includes applying a plurality of anodic pulses to the seed layer prior to an electrochemical deposition process and subsequent to the seed layer contacting a plating solution, and applying a cathodic pulse to the seed layer immediately following each of the plurality of anodic pulses. The waveform is generally provided by a power supply in electrical communication with a system controller configured to supply controlling signals to the power supply.

Abstract: A method and apparatus for removing degraded organics from an electroplating solution by passing at least a portion of electroplating solution through a filter. The apparatus generally includes a deposition cell including a fluid inlet, a fluid reservoir, and at least one filter disposed between the reservoir and the fluid inlet. The apparatus may further include a control valve disposed between the fluid reservoir and the fluid inlet for passing at least a portion of an electroplating solution to a recovery stream including the at least one filter.

Abstract: Generally, a method and apparatus for retaining polishing material is provided. In one embodiment, the apparatus includes a platen having a top surface, a plurality of channels and one or more vacuum ports. The top surface is adapted to support the polishing material. The plurality of channels are formed in a polishing area of the top surface. The vacuum ports are disposed in the platen and at least one port is in communication with at least one of the channels. Upon application of a vacuum to the ports, the channels remove fluids under the polishing material while securing the polishing material to the top surface.

Abstract: The present invention generally provides a method for preventing surface corrosion in an edge bead removal process. The method includes rinsing the substrate surface with a rinsing solution containing a rinsing agent and an inhibiting agent prior to removing the edge bead. The inhibiting agent bonds to the substrate surface and operates to prevent corrosion of the substrate surface after the rinsing process.

Abstract: A method and apparatus for removing an edge bead from a substrate. The apparatus includes rotatable substrate support member configured to support a substrate thereon and at least one fluid distribution nozzle positioned to distribute an edge bead removal solution onto the substrate. A conically shaped shield member is positioned above the substrate support member, the shield member having a fluid conduit formed therein and an annular gas distribution nozzle positioned on a lower portion of the shield member, the annular gas nozzle being in fluid communication with the fluid conduit. The method includes rotating a substrate on a substrate support member, dispensing an edge bead removal solution onto an exclusion zone of the substrate with at least one fluid nozzle, and dispensing a gas flow from at least one gas nozzle positioned above the substrate radially inward from the at least one fluid nozzle, the gas flow radiating outward across the exclusion zone.

Abstract: The present invention provides an apparatus for removing an edge bead from a substrate. The apparatus includes a substrate support member, a plurality of mounting posts positioned along a perimeter of the substrate support member, and a rigid annular capillary ring mounted to the plurality of mounting posts. The rigid annular capillary ring includes a substantially planar upper capillary surface and is configured to maintain the substantially planar capillary surface when attached to the mounting posts.

Abstract: The present invention generally provides an improved apparatus and method for removing an edge bead from a substrate. The apparatus includes a processing chamber having an edge bead removal fluid distribution system positioned therein and a substrate support member positioned in the processing chamber proximate the fluid distribution system. The substrate support member generally includes an upper substrate support surface having a plurality of fluid dispensing apertures formed therein, at least three capillary ring support posts radially positioned about a perimeter of the upper substrate support surface, and a annular capillary ring having a planar upper surface rigidly mounted to the capillary ring support posts.

Abstract: An article of manufacture, a method, and an apparatus for use in a chemical mechanical polishing system is provided. In one aspect, an article of manufacture is provided for polishing a substrate including a polishing article having a polishing surface, the polishing surface including a first polishing portion having a first polishing material of a first hardness for polishing a first portion of the substrate, and a second polishing portion having a second polishing material of a second hardness for polishing a second portion of the substrate. The article of manufacturer may be disposed on a rotatable, stationary, or linear platen for processing a substrate. In another aspect, a method is provided for processing a substrate, including providing a platen containing the polishing article disposed on the rotatable platen, delivering a polishing composition to the polishing article, and contacting a substrate on the polishing article.

Abstract: Cu metallization is treated to reduce defects and effect passivation by removing a thin surface layer or removing corrosion stains, subsequent to CMP and barrier layer removal, employing a cleaning composition comprising deionized water, an acid and ammonium hydroxide and/or an amine. Embodiments include removing up to about 100 Å of the Cu metallization surface in a damascene opening by sequentially treating the exposed Cu surface with: an optional corrosion inhibitor; a solution having a pH of about 4 to about 11 and containing an acid, ammonium hydroxide and/or an amine, and deionized water; and a corrosion inhibitor.

Abstract: The present invention generally provides a system and apparatus for cleaning a polishing pad, such as a fixed abrasive pad, in a substrate processing system. In one embodiment, the system includes one or more nozzles which spray a fluid at pressures of about 30 psi to about 300 psi or greater, as measured at the nozzle, onto a polishing pad at acute angles to the surface of the polishing pad. The nozzles can spray downward and outward toward the perimeter of the pad to facilitate the debris removal therefrom. The system can include a pressure source to produce a sufficient fluid pressure substantially higher than the typical fluid pressure available from a facility installation.

Abstract: A semiconductor substrate processing system for polishing a substrate that generally includes a platen and a web of polishing material disposed thereon. Embodiments of the system include a disposable cartridge for housing the web of polishing material, a shield member disposed proximate the web for preventing contamination of the unused portion of the web, a fluid delivery for fixing and freeing the web from the platen, apparatus for controlling the lateral movement of the web, and an apparatus for providing more linear feet of polishing material per height of a roll.

Abstract: Deposited Cu is initially removed by CMP with fixed abrasive polishing pads stopping on the barrier layer, e.g., Ta or TaN. Buffing is then conducted selectively with respect to Cu: Ta or TaN and Cu: silicon oxide to remove the barrier layer and control dishing to no greater than 100 Å.

Abstract: The useful lifetime of a fixed abrasive article is extended and wafer-to-wafer uniformity enhanced by preconditioning a fixed abrasive element and/or periodic conditioning after initial wafer polishing. Embodiments include preconditioning by forced removal of an upper binder-rich portion of the fixed abrasive elements to expose abrasive particles having a similar concentration as the bulk concentration at about one half the height of the elements. Embodiments further include periodic conditioning after initial wafer polishing by forced removal of an upper portion of the fixed abrasive elements.

Abstract: An inventive brush and scrubbing device is provided for simultaneously scrubbing both planar and profiled (e.g., edge) surfaces of a thin disk such as a semiconductor wafer. The inventive brush has a contact surface having two portions, a planar portion for contacting a planar surface of a wafer, and a profiled portion for contacting an edge surface of a wafer. The profile of the profiled portion preferably follows the edge profile of a wafer to be cleaned by the brush. The profiled portion may have a higher modulus of elasticity than does the planar portion. Preferably the brushes are roller type PVA brushes having a plurality of nodules formed thereon.

Abstract: A process for treating a copper or copper alloy substrate surface with a composition and corrosion inhibitor solution to minimize defect formation and surface corrosion, the method including applying a composition including one or more chelating agents, a pH adjusting agent to produce a pH between about 3 and about 11, and deionized water, and then applying a corrosion inhibitor solution. The composition may further comprise a reducing agent and/or corrosion inhibitor. The method may further comprise applying the corrosion inhibitor solution prior to treating the substrate surface with the composition.