Abstract: Systems, apparatuses and methods may provide for technology to determine a programmable eviction ratio associated with a storage device and convert a portion of a single-level cell region in the storage device into a multi-level cell region in accordance with the programmable eviction ratio. In one example, the amount of the portion converted into the multi-level cell region varies gradually as a function of percent capacity filled in the storage device.

Abstract: Systems, apparatuses and methods may provide for technology to determine a programmable eviction ratio associated with a storage device and convert a portion of a single-level cell region in the storage device into a multi-level cell region in accordance with the programmable eviction ratio. In one example, the amount of the portion converted into the multi-level cell region varies gradually as a function of percent capacity filled in the storage device.

Abstract: Technology for an apparatus is described. The apparatus can include a first non-volatile memory, a second non-volatile memory to have a write access time faster than the first non-volatile memory, and a memory controller. The memory controller can be configured to detect corrupted data in a selected data region in the first non-volatile memory. The selected data region can be associated with an increased risk of data corruption after data is written from the second non-volatile memory to the first non-volatile memory. Uncorrupted data in the second non-volatile memory that corresponds to the corrupted data in the first non-volatile memory can be identified. Data recovery in the first non-volatile memory can be performed by replacing the corrupted data in the first non-volatile memory with uncorrupted data from the second non-volatile memory.

Abstract: Systems, apparatuses and methods may provide for technology to determine a programmable eviction ratio associated with a storage device and convert a portion of a single-level cell region in the storage device into a multi-level cell region in accordance with the programmable eviction ratio. In one example, the amount of the portion converted into the multi-level cell region varies gradually as a function of percent capacity filled in the storage device.

Abstract: A method is described. The method includes programming multi-bit storage cells of multiple FLASH memory chips in a lower density storage mode. The method also includes programming the multi-bit storage cells of the multiple FLASH memory chips in a higher density storage mode after at least 25% of the storage capacity of the multiple FLASH memory chips has been programmed.

Abstract: Technology for an apparatus is described. The apparatus can include a first non-volatile memory, a second non-volatile memory to have a write access time faster than the first non-volatile memory, and a memory controller. The memory controller can be configured to detect corrupted data in a selected data region in the first non-volatile memory. The selected data region can be associated with an increased risk of data corruption after data is written from the second non-volatile memory to the first non-volatile memory. Uncorrupted data in the second non-volatile memory that corresponds to the corrupted data in the first non-volatile memory can be identified. Data recovery in the first non-volatile memory can be performed by replacing the corrupted data in the first non-volatile memory with uncorrupted data from the second non-volatile memory.

Abstract: Technologies for managing a read cache of a solid state drive include establishing a read cache in an otherwise unused region of non-volatile memory of the solid state drive. To do so, a memory region of the non-volatile memory corresponding to the read cache is converted to single-level cell (SLC) mode. For example, the memory region may be converted from a multi-level cell (MLC) or a triple-level cell (TLC) mode to the SLC mode. A drive controller of the solid state drive manages data in the read cache based on a read count associated with the data. For example, data having a relatively high read count may be inserted into the read cache and data having a relatively lower read count may be evicted from the read cache over time. The size of the read cache may be dynamically adjusted over time based on available space and/or operating requirements.

Abstract: A Double Data Rate (DDR) nonvolatile memory for use with a wireless device. A host processor transfers commands and data through a DDR interface of the nonvolatile memory. The DDR nonvolatile memory implements legacy flash functions while maintaining DDR behavior.

Abstract: A Double Data Rate (DDR) nonvolatile memory for use with a wireless device. A host processor transfers commands and data through a DDR interface of the nonvolatile memory. The DDR nonvolatile memory implements legacy flash functions while maintaining DDR behavior.

Abstract: A Double Data Rate (DDR) nonvolatile memory includes a DDR I/F block to receive an address that is used to separate DDR data into coherent data and non-coherent data that are stored separately in the DDR nonvolatile memory.

Abstract: A Double Data Rate (DDR) nonvolatile memory for use with a wireless device. A host processor transfers commands and data through a DDR interface of the nonvolatile memory. The DDR nonvolatile memory implements legacy flash functions while maintaining DDR behavior.

Abstract: A Double Data Rate (DDR) nonvolatile memory includes a DDR I/F block to receive an address that is used to separate DDR data into coherent data and non-coherent data that are stored separately in the DDR nonvolatile memory.

Abstract: A DDR non-volatile memory providing Double Data Rate (DDR) operation by decoding an address received from an external processor at a DDR interface to provide a command to store data in page buffers. The data received from the external processor at the DDR interface is transferred to page buffers based on the command. A command issued by an internal microcontroller transfers data stored in the page buffers to non-volatile storage.

Abstract: Briefly, in accordance with one embodiment of the invention, a portable communication device may have multiple processors and a memory. Portions of the memory may only be accessible by one of the processors.

Abstract: A single status register, capable of providing status for simultaneous read-while-write operation on a flash memory array is described. The status of the memory array is reported to the user based on two partitions. A microcontroller is used to traffic the status register to memory array communication.

Abstract: A burst transfer operation with a memory device can be suspended and resumed without having to provide the current memory address when it is resumed. A chip enable signal to the memory device can be deasserted to initiate the suspend operation and place the memory device in a low power standby mode. When the chip enable signal is reasserted, the memory device can be reactivated and the burst transfer can continue where it stopped, without any setup commands. The current address counter and other bus transfer parameters can be saved within the memory device during the suspend operation. When the suspend operation is terminated by reasserting the chip enable signal, the memory device can resume the transfer using the saved parameters.

Abstract: Briefly, in accordance with one embodiment of the invention, a portable communication device may have multiple processors and a memory. Portions of the memory may only be accessible by one of the processors.

Abstract: A single status register, capable of providing status for simultaneous read-while-write operation on a flash memory array is described. The status of the memory array is reported to the user based on two partitions. A microcontroller is used to traffic the status register to memory array communication.

Abstract: A method, apparatus, and system for controlling the voltage levels across capacitors coupled between a first node and a second node of an integrated circuit so that the voltage levels across these capacitors will not exceed the breakdown voltage limitation of these capacitors. The voltage level between the first and second nodes of the integrated circuit can vary from a second voltage level to a first voltage level when the integrated circuit transitions from a second power state to a first power state, respectively. A first capacitor and a second capacitor are connected in series between the first and second nodes of the integrated circuit forming a middle node between the first and second capacitors.

Abstract: A method, apparatus, and system for controlling the voltage levels across capacitors coupled between a first node and a second node of an integrated circuit so that the voltage levels across these capacitors will not exceed the breakdown voltage limitation of these capacitors. The voltage level between the first and second nodes of the integrated circuit can vary from a second voltage level to a first voltage level when the integrated circuit transitions from a second power state to a first power state, respectively. A first capacitor and a second capacitor are connected in series between the first and second nodes of the integrated circuit forming a middle node between the first and second capacitors.