Patents by Inventor Ramkishan Rao Lingampalli
Ramkishan Rao Lingampalli has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240023204Abstract: Various embodiments herein relate to techniques for fabricating a platen for use in a semiconductor processing apparatus, as well as the platens and intermediate structures produced by such techniques. For example, such techniques may include depositing a coating on a heater to form a coated heater, where the heater includes a metal wire on which the coating is formed; placing the coated heater in powder; consolidating the powder into a cohesive mass to form a powder-based composite; and sintering the powder-based composite to form the platen, where the platen includes the heater embedded in sintered ceramic material. The coating on the heater may act to protect the heater from chemical attack from carbon- and/or oxygen-containing compounds that may be present during sintering. The platen may be part of a pedestal that, once fabricated, may be installed in a semiconductor processing apparatus.Type: ApplicationFiled: September 28, 2021Publication date: January 18, 2024Inventors: Joel Hollingsworth, Ramkishan Rao Lingampalli, Pankaj Hazarika
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Publication number: 20230073259Abstract: A baseplate for a substrate support includes a heater layer configured to selectively heat the baseplate and a heat spreader disposed between the heater layer and an upper surface of the baseplate. The heat spreader is configured to distribute heat provided by the heater layer throughout the baseplate. The baseplate includes a first material that has a first coefficient of thermal expansion (CTE) and a first thermal conductivity. The heat spreader includes a second material that has a second CTE and a second thermal conductivity greater than the first thermal conductivity.Type: ApplicationFiled: February 17, 2021Publication date: March 9, 2023Inventors: Ramesh CHANDRASEKHARAN, Karl Frederick LEESER, Christopher GAGE, Seshu NIMMALA, Ramkishan Rao LINGAMPALLI, Joel HOLLINGSWORTH, Vincent BURKHART, William LAFFERTY, Sergey Georgiyevich BELOSTOTSKIY
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Publication number: 20220181126Abstract: In some examples, a substrate support assembly comprises a monolithic ceramic body, a heater element disposed within the monolithic ceramic body, and an RF antenna disposed within the monolithic ceramic body. One or more power lines supplies the heater element and the RF antenna. A lamellar structure is formed or included within the monolithic ceramic body, the lamellar structure including at least one layer having a thermal conductivity different than a thermal conductivity of the monolithic ceramic body.Type: ApplicationFiled: March 12, 2020Publication date: June 9, 2022Inventors: Joel Philip Hollingsworth, Karl Frederick Leeser, Ramkishan Rao Lingampalli
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Patent number: 10964545Abstract: A semiconductor substrate processing apparatus includes a vacuum chamber having a processing zone in which a semiconductor substrate may be processed, a process gas source in fluid communication with the vacuum chamber for supplying a process gas into the vacuum chamber, a showerhead module through which process gas from the process gas source is supplied to the processing zone of the vacuum chamber, and a substrate pedestal module. The substrate pedestal module includes a pedestal made of ceramic material having an upper surface configured to support a semiconductor substrate thereon during processing, a stem made of ceramic material, and a backside gas tube made of metallized ceramic material that is located in an interior of the stem. The metallized ceramic tube can be used to deliver backside gas to the substrate and supply RF power to an embedded electrode in the pedestal.Type: GrantFiled: August 20, 2019Date of Patent: March 30, 2021Assignee: Lam Research CorporationInventors: Ramkishan Rao Lingampalli, Joel Philip Hollingsworth, Bradley Baker
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Publication number: 20200051822Abstract: A semiconductor substrate processing apparatus includes a vacuum chamber having a processing zone in which a semiconductor substrate may be processed, a process gas source in fluid communication with the vacuum chamber for supplying a process gas into the vacuum chamber, a showerhead module through which process gas from the process gas source is supplied to the processing zone of the vacuum chamber, and a substrate pedestal module. The substrate pedestal module includes a pedestal made of ceramic material having an upper surface configured to support a semiconductor substrate thereon during processing, a stem made of ceramic material, and a backside gas tube made of metallized ceramic material that is located in an interior of the stem. The metallized ceramic tube can be used to deliver backside gas to the substrate and supply RF power to an embedded electrode in the pedestal.Type: ApplicationFiled: August 20, 2019Publication date: February 13, 2020Inventors: Ramkishan Rao Lingampalli, Joel Philip Hollingsworth, Bradley Baker
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Patent number: 10431467Abstract: A semiconductor substrate processing apparatus includes a vacuum chamber having a processing zone in which a semiconductor substrate may be processed, a process gas source in fluid communication with the vacuum chamber for supplying a process gas into the vacuum chamber, a showerhead module through which process gas from the process gas source is supplied to the processing zone of the vacuum chamber, and a substrate pedestal module. The substrate pedestal module includes a pedestal made of ceramic material having an upper surface configured to support a semiconductor substrate thereon during processing, a stem made of ceramic material, and a backside gas tube made of metallized ceramic material that is located in an interior of the stem. The metallized ceramic tube can be used to deliver backside gas to the substrate and supply RF power to an embedded electrode in the pedestal.Type: GrantFiled: November 20, 2018Date of Patent: October 1, 2019Assignee: Lam Research CorporationInventors: Ramkishan Rao Lingampalli, Joel Hollingsworth, Bradley Baker
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Patent number: 10400333Abstract: Various implementations of hybrid ceramic faceplates for substrate processing showerheads are provided. The hybrid ceramic showerhead faceplates may include an electrode embedded within the ceramic material of the faceplate, as well as a pattern of through-holes. The electrode may be fully encapsulated within the ceramic material with respect to the through-holes. In some implementations, a heater element may also be embedded within the hybrid ceramic showerhead faceplate. A DC voltage source may be electrically connected with the hybrid ceramic showerhead faceplate during use. The hybrid ceramic faceplates may be easily removable from the substrate processing showerheads for easy cleaning and faceplate replacement.Type: GrantFiled: August 11, 2016Date of Patent: September 3, 2019Assignee: Novellus Systems, Inc.Inventors: Mohamed Sabri, Ramkishan Rao Lingampalli, Karl F. Leeser
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Publication number: 20190109008Abstract: A semiconductor substrate processing apparatus includes a vacuum chamber having a processing zone in which a semiconductor substrate may be processed, a process gas source in fluid communication with the vacuum chamber for supplying a process gas into the vacuum chamber, a showerhead module through which process gas from the process gas source is supplied to the processing zone of the vacuum chamber, and a substrate pedestal module. The substrate pedestal module includes a pedestal made of ceramic material having an upper surface configured to support a semiconductor substrate thereon during processing, a stem made of ceramic material, and a backside gas tube made of metallized ceramic material that is located in an interior of the stem. The metallized ceramic tube can be used to deliver backside gas to the substrate and supply RF power to an embedded electrode in the pedestal.Type: ApplicationFiled: November 20, 2018Publication date: April 11, 2019Applicant: LAM RESEARCH CORPORATIONInventors: Ramkishan Rao Lingampalli, Joel Hollingsworth, Bradley Baker
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Patent number: 10217614Abstract: A gas distribution plate for a substrate processing system includes a ceramic lower portion of the gas distribution plate including a plurality of ceramic green sheets. A ceramic upper portion of the gas distribution plate includes a plurality of ceramic green sheets. An electrode is printed on at least one of an upper surface of the ceramic lower portion and a lower surface of the ceramic upper portion using metal screen printing. A first plurality of through holes is machined through the ceramic lower portion and the ceramic upper portion of the gas distribution plate prior to sintering.Type: GrantFiled: January 12, 2015Date of Patent: February 26, 2019Assignee: LAM RESEARCH CORPORATIONInventors: Jeremy Tucker, Ramkishan Rao Lingampalli, Tony Kaushal
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Publication number: 20190032211Abstract: A monolithic ceramic gas distribution plate for use in a process chamber wherein semiconductor substrates can be processed includes a monolithic ceramic body having an upper surface, a lower surface, and an outer cylindrical surface extending between the upper surface and the lower surface. The lower surface includes first gas outlets at uniformly spaced apart first locations and the first gas outlets are in fluid communication with first gas inlets in the upper surface by a first set of vertically extending through holes connecting the first gas inlets with the first gas outlets. The lower surface also includes second gas outlets at uniformly spaced second locations adjacent the first locations and the second gas outlets are in fluid communication with an inner plenum in the monolithic ceramic body by a second set of vertically extending through holes connecting the second gas outlets with the inner plenum.Type: ApplicationFiled: July 28, 2017Publication date: January 31, 2019Applicant: LAM RESEARCH CORPORATIONInventors: Jeremy Tucker, Ramkishan Rao Lingampalli
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Publication number: 20180350610Abstract: A semiconductor substrate processing apparatus includes a vacuum chamber having a processing zone in which a semiconductor substrate may be processed, a process gas source in fluid communication with the vacuum chamber for supplying a process gas into the vacuum chamber, a showerhead module through which process gas from the process gas source is supplied to the processing zone of the vacuum chamber, and a substrate pedestal module. The substrate pedestal module includes a pedestal made of ceramic material having an upper surface configured to support a semiconductor substrate thereon during processing, a stem made of ceramic material, and a backside gas tube made of metallized ceramic material that is located in an interior of the stem. The metallized ceramic tube can be used to deliver backside gas to the substrate and supply RF power to an embedded electrode in the pedestal.Type: ApplicationFiled: May 30, 2017Publication date: December 6, 2018Applicant: LAM RESEARCH CORPORATIONInventors: Ramkishan Rao Lingampalli, Joel Hollingsworth, Bradley Baker
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Patent number: 10147610Abstract: A semiconductor substrate processing apparatus includes a vacuum chamber having a processing zone in which a semiconductor substrate may be processed, a process gas source in fluid communication with the vacuum chamber for supplying a process gas into the vacuum chamber, a showerhead module through which process gas from the process gas source is supplied to the processing zone of the vacuum chamber, and a substrate pedestal module. The substrate pedestal module includes a pedestal made of ceramic material having an upper surface configured to support a semiconductor substrate thereon during processing, a stem made of ceramic material, and a backside gas tube made of metallized ceramic material that is located in an interior of the stem. The metallized ceramic tube can be used to deliver backside gas to the substrate and supply RF power to an embedded electrode in the pedestal.Type: GrantFiled: May 30, 2017Date of Patent: December 4, 2018Assignee: LAM RESEARCH CORPORATIONInventors: Ramkishan Rao Lingampalli, Joel Hollingsworth, Bradley Baker
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Patent number: 9719169Abstract: Electronic device fabrication processes, apparatuses and systems for flowable gap fill or flowable deposition techniques are described. In some implementations, a semiconductor fabrication chamber is described which is configured to maintain a semiconductor wafer at a temperature near 0° C. while maintaining most other components within the fabrication chamber at temperatures on the order of 5-10° C. or higher than the wafer temperature.Type: GrantFiled: December 16, 2011Date of Patent: August 1, 2017Assignee: Novellus Systems, Inc.Inventors: Jonathan D. Mohn, Harald te Nijenhuis, Shawn M. Hamilton, Kevin Madrigal, Ramkishan Rao Lingampalli
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Publication number: 20160348244Abstract: Various implementations of hybrid ceramic faceplates for substrate processing showerheads are provided. The hybrid ceramic showerhead faceplates may include an electrode embedded within the ceramic material of the faceplate, as well as a pattern of through-holes. The electrode may be fully encapsulated within the ceramic material with respect to the through-holes. In some implementations, a heater element may also be embedded within the hybrid ceramic showerhead faceplate. A DC voltage source may be electrically connected with the hybrid ceramic showerhead faceplate during use. The hybrid ceramic faceplates may be easily removable from the substrate processing showerheads for easy cleaning and faceplate replacement.Type: ApplicationFiled: August 11, 2016Publication date: December 1, 2016Inventors: Mohamed Sabri, Ramkishan Rao Lingampalli, Karl F. Leeser
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Patent number: 9449795Abstract: A showerhead assembly for a substrate processing system includes a back plate connected to a gas channel. A face plate is connected adjacent to a first surface of the back plate and includes a gas diffusion surface. An electrode is arranged in one of the back plate and the face plate and is connected to one or more conductors. A gas plenum is defined between the back plate and the face plate and is in fluid communication with the gas channel. The back plate and the face plate are made of a non-metallic material.Type: GrantFiled: April 8, 2013Date of Patent: September 20, 2016Assignee: NOVELLUS SYSTEMS, INC.Inventors: Mohamed Sabri, Edward Augustyniak, Douglas L. Keil, Ramkishan Rao Lingampalli, Karl Leeser, Cody Barnett
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Patent number: 9441296Abstract: Various implementations of hybrid ceramic faceplates for substrate processing showerheads are provided. The hybrid ceramic showerhead faceplates may include an electrode embedded within the ceramic material of the faceplate, as well as a pattern of through-holes. The electrode may be fully encapsulated within the ceramic material with respect to the through-holes. In some implementations, a heater element may also be embedded within the hybrid ceramic showerhead faceplate. A DC voltage source may be electrically connected with the hybrid ceramic showerhead faceplate during use. The hybrid ceramic faceplates may be easily removable from the substrate processing showerheads for easy cleaning and faceplate replacement.Type: GrantFiled: March 2, 2012Date of Patent: September 13, 2016Assignee: Novellus Systems, Inc.Inventors: Mohamed Sabri, Ramkishan Rao Lingampalli, Karl F. Leeser
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Publication number: 20160203952Abstract: A gas distribution plate for a substrate processing system includes a ceramic lower portion of the gas distribution plate including a plurality of ceramic green sheets. A ceramic upper portion of the gas distribution plate includes a plurality of ceramic green sheets. An electrode is printed on at least one of an upper surface of the ceramic lower portion and a lower surface of the ceramic upper portion using metal screen printing. A first plurality of through holes is machined through the ceramic lower portion and the ceramic upper portion of the gas distribution plate prior to sintering.Type: ApplicationFiled: January 12, 2015Publication date: July 14, 2016Inventors: Jeremy Tucker, Ramkishan Rao Lingampalli, Tony Kaushal
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Publication number: 20140238608Abstract: A showerhead assembly for a substrate processing system includes a back plate connected to a gas channel. A face plate is connected adjacent to a first surface of the back plate and includes a gas diffusion surface. An electrode is arranged in one of the back plate and the face plate and is connected to one or more conductors. A gas plenum is defined between the back plate and the face plate and is in fluid communication with the gas channel. The back plate and the face plate are made of a non-metallic material.Type: ApplicationFiled: April 8, 2013Publication date: August 28, 2014Applicant: Novellus Systems, Inc.Inventors: Mohamed Sabri, Edward Augustyniak, Douglas L. Keil, Ramkishan Rao Lingampalli, Karl Leeser, Cody Barnett
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Publication number: 20120222815Abstract: Various implementations of hybrid ceramic faceplates for substrate processing showerheads are provided. The hybrid ceramic showerhead faceplates may include an electrode embedded within the ceramic material of the faceplate, as well as a pattern of through-holes. The electrode may be fully encapsulated within the ceramic material with respect to the through-holes. In some implementations, a heater element may also be embedded within the hybrid ceramic showerhead faceplate. A DC voltage source may be electrically connected with the hybrid ceramic showerhead faceplate during use. The hybrid ceramic faceplates may be easily removable from the substrate processing showerheads for easy cleaning and faceplate replacement.Type: ApplicationFiled: March 2, 2012Publication date: September 6, 2012Inventors: Mohamed Sabri, Ramkishan Rao Lingampalli, Karl F. Leeser
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Publication number: 20120161405Abstract: Electronic device fabrication processes, apparatuses and systems for flowable gap fill or flowable deposition techniques are described. In some implementations, a semiconductor fabrication chamber is described which is configured to maintain a semiconductor wafer at a temperature near 0° C. while maintaining most other components within the fabrication chamber at temperatures on the order of 5-10° C. or higher than the wafer temperature.Type: ApplicationFiled: December 16, 2011Publication date: June 28, 2012Inventors: Jonathan D. Mohn, Harald te Nijenhuis, Shawn M. Hamilton, Kevin Madrigal, Ramkishan Rao Lingampalli