Abstract: A system and method of identifying a selected process point in a multi-mode pulsing process includes applying a multi-mode pulsing process to a selected wafer in a plasma process chamber, the multi-mode pulsing process including multiple cycles, each one of the cycles including at least one of multiple, different phases. At least one process output variable is collected for a selected at least one of the phases, during multiple cycles for the selected wafer. An envelope and/or a template of the collected at least one process output variable can be used to identify the selected process point. A first trajectory for the collected process output variable of a previous phase can be compared to a second trajectory of the process output variable of the selected phase. A multivariate analysis statistic of the second trajectory can be calculated and used to identify the selected process point.

Abstract: The present invention relates to compound of formula (I), or stereoisomers and pharmaceutically acceptable salts as muscarinic M1 receptor positive allosteric modulators. This invention also relates to methods of making such compounds and pharmaceutical compositions comprising such compounds. The compounds of this invention are useful in the treatment of various disorders that are related to muscarinic M1 receptor.

Abstract: The present invention relates to compounds of formula (I), including their stereoisomers and pharmaceutically acceptable salts. This invention also relates to methods of making such compounds and pharmaceutical compositions comprising such compounds. The compounds of this invention are useful in the treatment of various disorders that are related to 5-hydroxytryptamine 4 (5-HT4) receptor.

Abstract: The present invention relates to compounds of formula (I), including their stereoisomers and pharmaceutically acceptable salts. This invention also relates to methods of making such compounds and pharmaceutical compositions comprising such compounds. The compounds of this invention are useful in the treatment of various disorders that are related to 5-hydroxytryptamine 4 (5-HT4) receptor.

Abstract: A system and method of identifying a selected process point in a multi-mode pulsing process includes applying a multi-mode pulsing process to a selected wafer in a plasma process chamber, the multi-mode pulsing process including multiple cycles, each one of the cycles including at least one of multiple, different phases. At least one process output variable is collected for a selected at least one of the phases, during multiple cycles for the selected wafer. An envelope and/or a template of the collected at least one process output variable can be used to identify the selected process point. A first trajectory for the collected process output variable of a previous phase can be compared to a second trajectory of the process output variable of the selected phase. A multivariate analysis statistic of the second trajectory can be calculated and used to identify the selected process point.

Abstract: A system and method of identifying a selected process point in a multi-mode pulsing process includes applying a multi-mode pulsing process to a selected wafer in a plasma process chamber, the multi-mode pulsing process including multiple cycles, each one of the cycles including at least one of multiple, different phases. At least one process output variable is collected for a selected at least one of the phases, during multiple cycles for the selected wafer. An envelope and/or a template of the collected at least one process output variable can be used to identify the selected process point. A first trajectory for the collected process output variable of a previous phase can be compared to a second trajectory of the process output variable of the selected phase. A multivariate analysis statistic of the second trajectory can be calculated and used to identify the selected process point.

Abstract: A system and method of identifying a selected process point in a multi-mode pulsing process includes applying a multi-mode pulsing process to a selected wafer in a plasma process chamber, the multi-mode pulsing process including multiple cycles, each one of the cycles including at least one of multiple, different phases. At least one process output variable is collected for a selected at least one of the phases, during multiple cycles for the selected wafer. An envelope and/or a template of the collected at least one process output variable can be used to identify the selected process point. A first trajectory for the collected process output variable of a previous phase can be compared to a second trajectory of the process output variable of the selected phase. A multivariate analysis statistic of the second trajectory can be calculated and used to identify the selected process point.

Abstract: A method for etching a tungsten containing layer in an etch chamber is provided. A substrate is placed with a tungsten containing layer in the etch chamber. A plurality of cycles is provided. Each cycle comprises a passivation phase for forming a passivation layer on sidewalls and bottoms of features in the tungsten containing layer. Additionally, each cycle comprises an etch phase for etching features in the tungsten containing layer.

Abstract: The molecular etcher carbonyl fluoride (COF2) or any of its variants, are provided for, according to the present invention, to increase the efficiency of etching and/or cleaning and/or removal of materials such as the unwanted film and/or deposits on the chamber walls and other components in a process chamber or substrate (collectively referred to herein as “materials”). The methods of the present invention involve igniting and sustaining a plasma, whether it is a remote or in-situ plasma, by stepwise addition of additives, such as but not limited to, a saturated, unsaturated or partially unsaturated perfluorocarbon compound (PFC) having the general formula (CyFz) and/or an oxide of carbon (COx) to a nitrogen trifluoride (NF3) plasma into a chemical deposition chamber (CVD) chamber, thereby generating COF2. The NF3 may be excited in a plasma inside the CVD chamber or in a remote plasma region upstream from the CVD chamber.

Abstract: A method for etching a tungsten containing layer in an etch chamber is provided. A substrate is placed with a tungsten containing layer in the etch chamber. A plurality of cycles is provided. Each cycle comprises a passivation phase for forming a passivation layer on sidewalls and bottoms of features in the tungsten containing layer. Additionally, each cycle comprises an etch phase for etching features in the tungsten containing layer.

Abstract: The present invention discloses new chamber clean chemistries for low temperature, gas phase, in-situ removal of fluorine doped tin oxide (FTO) films. These new in-situ cleaning chemistries will enable solar glass and low-emissivity glass manufacturers to improve the quality of FTO films produced, as well as reduce costs associated manual cleaning of FTO deposition systems. The end result is increased production throughput and better quality FTO films. This is achieved by using gas phase, in-situ cleaning molecules, such as, but not limited to, HI, CH3I, and HBr, in the FTO deposition chamber to remove unwanted buildup of FTO from chamber walls and components. Significant revenue can be derived from this customer benefit through molecule and technology solution sales related to in-situ FTO TCO chamber cleaning.

Abstract: The molecular etcher carbonyl fluoride (COF2) or any of its variants, are provided for, according to the present invention, to increase the efficiency of etching and/or cleaning and/or removal of materials such as the unwanted film and/or deposits on the chamber walls and other components in a process chamber or substrate (collectively referred to herein as “materials”). The methods of the present invention involve igniting and sustaining a plasma, whether it is a remote or in-situ plasma, by stepwise addition of additives, such as but not limited to, a saturated, unsaturated or partially unsaturated perfluorocarbon compound (PFC) having the general formula (CyFz) and/or an oxide of carbon (COx) to a nitrogen trifluoride (NF3) plasma into a chemical deposition chamber (CVD) chamber, thereby generating COF2. The NF3 may be excited in a plasma inside the CVD chamber or in a remote plasma region upstream from the CVD chamber.

Abstract: The subject invention provides systems and methods that monitor and/or control turbulence of an immersion medium. The systems and methods relate to computer controlled techniques that reduce effects of immersion medium flow due to a liquid temperature gradient. According to an aspect of the subject invention, a number of temperature measurements of the immersion medium are obtained, and the temperature measurements are utilized to generate a gradient map of the immersion medium. By way of illustration, the temperature measurements can be made via wireless temperature sensors. The gradient map can be utilized to understand the stability of the immersion medium. According to an aspect of the subject invention, instability identified with the gradient map can be mitigated.

Abstract: A method for collision avoidance for a machine is disclosed. The method includes detecting an obstacle with an obstacle detection system and generating a corresponding signal. The obstacle detection system includes an operator input device. The method also includes providing an obstacle detection warning in response to the signal. The method further includes determining with a controller whether the operator input device has been activated in response to the obstacle detection warning.

Abstract: A method for collision avoidance for a machine is disclosed. The method includes detecting an obstacle with an obstacle detection system and generating a corresponding signal. The obstacle detection system includes an operator input device. The method also includes providing an obstacle detection warning in response to the signal. The method further includes determining with a controller whether the operator input device has been activated in response to the obstacle detection warning.

Abstract: A collision avoidance system for a machine is disclosed. The collision avoidance system has a first obstacle detection system. The first obstacle detection system is configured to detect a first obstacle and generate a corresponding first signal. Additionally, the collision avoidance system has an operator interface. The operator interface has a display configured to communicate visual information to an operator. The operator interface also has an input device configured to receive selections from the operator and generate a corresponding second signal. In addition, the collision avoidance system has a controller. The controller is in communication with the first obstacle detection system and the operator interface. The controller is configured to control the display to provide a first dangerous obstacle warning to the operator, based on the first signal.

Abstract: A collision avoidance system for a machine is disclosed including an obstacle detection system configured to detect an obstacle. The collision avoidance system also includes a display configured to provide information to an operator. The collision avoidance system further includes a controller in communication with the obstacle detection system and the display. The controller is configured to control the display to indicate an obstacle detection based on information received from the obstacle detection system and determine a ground speed of the machine. The controller is also configured to determine a distance since the ground speed of the machine was last at a threshold speed and suppress the indication of the obstacle detection based on the distance since the ground speed of the machine was last at the threshold speed.

Abstract: A collision avoidance system for a machine is disclosed. The collision avoidance system has a first obstacle detection system. The first obstacle detection system is configured to detect a first obstacle and generate a corresponding first signal. Additionally, the collision avoidance system has an operator interface. The operator interface has a display configured to communicate visual information to an operator. In addition, the collision avoidance system has an interface module configured to detect a status of the machine and generate a corresponding second signal. The collision avoidance system also has a controller. The controller is in communication with the first obstacle detection system, the operator interface, and the interface module. The controller is configured to control the display to indicate a dangerous obstacle detection to the operator, based on the first and second signals.

Abstract: A guidance system for a mobile machine is disclosed. The guidance system may have a scanning device configured to generate a signal indicative of a lateral distance from the machine to a roadway marker, a locating device configured to determine a geographical location of the machine, and a controller in communication with the scanning device and the locating device. The controller may be configured to receive a desired lateral distance from the machine to the roadway marker, and to compare the desired lateral distance to the actual lateral distance. The controller may further be configured to implement a response to the comparison based on the geographical location.

Abstract: A system and method are provided to facilitate dual damascene interconnect integration with two imprint acts. The method provides for creation of a pair of translucent imprint molds containing the dual damascene pattern to be imprinted. The first imprint mold of the pair contains the via features of the dual damascene pattern and the second imprint mold of the pair contains the trench features. The via feature imprint mold is brought into contact with a first imaging layer deposited upon a first transfer layer which is deposited upon a dielectric layer of a substrate. The trench feature imprint mold is brought into contact with a second imaging layer deposited upon a second transfer layer which is deposited upon the first imaging layer of the substrate. When each imaging layer is exposed to a source of illumination, it cures with a structure matching the features of the corresponding imprint mold.