Abstract: A system and/or method are disclosed for measuring and/or controlling refractive index (n) and/or lithographic constant (k) of an immersion medium utilized in connection with immersion lithography. A known grating structure is built upon a substrate. A refractive index monitoring component facilitates measuring and/or controlling the immersion medium by utilizing detected light scattered from the known grating structure.

Abstract: The present invention provides systems and methods that facilitate formation of semiconductor devices via planarization processes. The present invention utilizes dishing effects that typically occur during a chemical mechanical planarization (CMP) process. A reducing CMP process is performed on a semiconductor device in order to form a passive layer instead of performing a first CMP, followed by a deposition and a second CMP to form a passive layer. The reducing CMP process utilizes a slurry that includes a reducing chemistry that forms the passive layer in a dish region of an electrode. Thus, the passive layer is formed in conjunction with the reducing CMP process utilized for forming the electrode.

Abstract: A projection lithography system exposes a photo sensitive material on a surface of a semiconductor substrate that includes surface height variations between a high level and a low level. The system comprises an illumination source projecting illumination within a narrow wavelength band centered about a nominal wavelength on an optic path towards the substrate during an exposure period. A wavelength modulation system within the optic path comprises means for chromatically separating the narrow wavelength band into at least two sub-bands, the first sub-band being smaller than the narrow wavelength band and centered about a first sub-band wavelength and the second sub-band being smaller than the narrow wavelength band and centered about a second sub-band wavelength and means for passing each of the first sub-band and the second sub-band during distinct time periods within the exposure period.

Abstract: A system for monitoring and controlling a boron phosphorous doped silicon oxide (BPSG) deposition and reflow process is provided. The system includes one or more light sources, each light source directing light to one or more portions of a wafer upon which BPSG is deposited. Light reflected from the BPSG is collected by a measuring system, which processes the collected light. Light passing through the BPSG may similarly be collected by the measuring system, which processes the collected light. The collected light is indicative of the conformality of the BPSG deposition of the respective portions of the wafer. The measuring system provides BPSG deposition related data to a processor that determines the BPSG deposition of the respective portions of the wafer. The system also includes a plurality of reflow controlling devices, each such device corresponding to a respective portion of the wafer and providing for the heating and/or cooling thereof.

Abstract: A method of making organic memory cells made of two electrodes with a controllably conductive media between the two electrodes is disclosed. The controllably conductive media contains an organic semiconductor layer that contains a photosensitive compound. The organic semiconductor layer is formed into memory cells using patterning techniques.

Abstract: A system and method is provided that facilitates the uniform development of a pattern on a photoresist material layer using a developer. The present invention accomplishes this end by considering the acid-base relationship of the photoresist material and developer and monitoring the development of water formed in the development process. Typically, photoresist material is purchased or manufactured with known concentrations of resin and photoacid generator. Therefore, by monitoring the development of water in the development process, the present invention can measure the acid consumption in the development process. The present invention can then utilize this information in optimizing the developer volume, developer concentration and developer time to improve the quality of the developed image pattern on the photoresist material layer.

Abstract: A system and method for analyzing sheet resistivity of a layer on a wafer employing electrical methods and for controlling rapid thermal annealing (RTA) of the layer is provided. The system includes components for performing RTA on the layer and components for analyzing the sheet resistivity of one or more portions of the layer upon which RTA was performed. The system further includes a feedback generator adapted to accept sheet resistivity data and to produce feedback information that can be used to control the RTA components. The system further includes a data store that can be employed in machine learning and/or to facilitate generating feedback information that can be employed to control RTA and a monitoring application that can be employed to schedule maintenance on the various components in the system.

Abstract: Patterned layers in an integrated circuit (IC) or other device are aligned in conjunction with the detection of the topology of the layers. The topology can be used to determine the location of a metrology mark and/or to compensate for a horizontal shift in the apparent location of the metrology mark. Precise detection of topography can be achieved without physical contact with the IC or other device with an atomic force microscope.

Abstract: A system and method are disclosed which enable temperature of a substrate, such as mask or reticle, to be monitored and/or regulated. One or more temperature sensors are associated with the substrate to sense substrate temperature during exposure by an exposing source. The sensed temperature is used to control one or more process parameters of the exposure to help maintain the substrate at or below a desired temperature.

Abstract: A systems and methodologies are provided for metal overetch control. Metal overetch processes are controlled by utilizing overetch device models to determine overetch times or overetch endpoints. The systems and methodologies reduce the need for manual testing and manual overetch characterization. An overetch system includes a metal etcher, a target device and an overetch controller. The target device is located in or on the metal etcher. The overetch controller is coupled to the metal etcher. The overetch controller controls overetching of the target device by the metal etcher. The overetch controller includes an overetch time controller, a set of etch control models and a control system.

Abstract: The present invention provides a method to fabricate an organic memory device, wherein the fabrication method includes forming a lower electrode, depositing a passive material over the surface of the lower electrode, applying an organic semiconductor material over the passive material, and operatively coupling the an upper electrode to the lower electrode through the organic semiconductor material and the passive material. Patterning of the organic semiconductor material is achieved by depositing a silicon-based resist over the organic semiconductor, irradiating portions of the silicon-based resist and patterning the silicon-based resist to remove the irradiated portions of the silicon-based resist. Thereafter, the exposed organic semiconductor can be patterned, and the non-irradiated silicon-based resist can be stripped to expose the organic semiconductor material that can be employed as a memory cell for single and multi-cell memory devices.

Abstract: There is provided a method of making plurality of features in a first layer. A photoresist layer is formed over the first layer. Dense regions in the photoresist layer are exposed through a first mask under a first set of illumination conditions. Isolated regions in the photoresist layer are exposed through a second mask different from the first mask under a second set of illumination conditions different from the first set of illumination conditions. The exposed photoresist layer is patterned and then the first layer is patterned using the patterned photoresist layer as a mask.

Abstract: Dosage forms and methods for providing a modulated release of cyclobenzaprine are provided. The sustained release dosage forms provide therapeutically effective average steady-state plasma cyclobenzaprine concentrations when administered once per day. The present invention pertains to methods of enhancing release rates by modifying the geometry of core layer interfaces through inversion of the traditional compression sequence in order to alter the mixing of layers during operation and by modifying the composition of core layers such that the viscosity of the hydrated delay layer remains higher than the viscosity of the hydrated drug layer during operation. The result is greater uniformity in the release rate from the core providing a more optimal ascending release rate and consistent performance.

Abstract: One aspect of the present invention relates to a method of fabricating a polymer memory device in a via. The method involves providing a semiconductor substrate having at least one metal-containing layer thereon, forming at least one copper contact in the metal-containing layer, forming at least one dielectric layer over the copper contact, forming at least one via in the dielectric layer to expose at least a portion of the copper contact, forming a polymer material in a lower portion of the via, and forming a top electrode material layer in an upper portion of the via.

Abstract: Dosage forms and methods for providing a modulated release of cyclobenzaprine are provided. The sustained release dosage forms provide therapeutically effective average steady-state plasma cyclobenzaprine concentrations when administered once per day. The composition of the delay layer and the composition of the drug layer are characterized by the viscosity of the hydrated delay layer remaining higher than the viscosity of the hydrated drug layer during operation in one embodiment. The result is greater uniformity in the release rate from the core providing a more optimal ascending release rate. In other embodiments, the hydrated delay layer has a viscosity that is lower than the viscosity of the hydrated drug layer as well as a hydrated delay layer that is substantially similar to the hydrated drug layer.

Abstract: Methods of making an organic memory cell made of two electrodes with a controllably conductive media between the two electrodes are disclosed. The controllably conductive Media contains an organic semiconductor layer and passive layer. In particular, novel methods of forming a electrode and adjacent passive layer are described.

Abstract: A system for monitoring a fabrication process is provided. The system includes one or more light sources, each light source directing light to one or more gratings on a wafer. Light reflected from the gratings is collected by a measuring system that processes the collected light. The collected light is indicative of distortion due to stress at respective portions of the wafer. The measuring system provides distortion/stress related data to a processor that determines the acceptability of the distortion of the respective portions of the wafer. The collected light may be analyzed by scatterometry systems to produce scatterometry signatures associated with distortion and to produce feed-forward control information that can be employed to control semiconductor fabrication processes.

Abstract: A system and method are disclosed for monitoring characteristics of a rotating substrate. As the substrate rotates in an environment, an incident light beam is emitted onto the substrate near an axis about which the substrate rotates. The emission of the incident beam is controlled as a function of the angular orientation of the substrate, so that the incident beam selectively interrogates a central region of the substrate to facilitate measuring and/or inspecting characteristics of the substrate.

Abstract: The present invention relates to systems and methods for mitigating pattern collapse in ultra-thin resist processing. In one embodiment, the present invention relates to etching extremely fine patterns into a hardmask immediately after developing an ultra-thin resist, wherein the resist is not dried.

Abstract: A system for regulating (e.g., terminating) a development process is provided. The system includes one or more light sources, each light source directing light to one or more patterns and/or gratings on a wafer. Light reflected from the patterns and/or gratings is collected by a measuring system, which processes the collected light. The collected light is indicative of the dimensions achieved at respective portions of the wafer. The measuring system provides development related data to a processor that determines the acceptability of the development of the respective portions of the wafer. The collected light may be analyzed by scatterometry and/or reflectometry systems to produce development related data and the development related data may be examined to determine whether a development process end point has been reached, at which time the system can control the development process and terminate development.