Patents by Inventor Ramona Marie Patterson

Ramona Marie Patterson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with impedance adjustment
    Patent number: 7545608
    Abstract: A current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) read head structure has the MR read head located between first and second shields (S1, S2) on a substrate with a shunt resistor R1 connecting S1 to the substrate and a shunt resistor R2 connecting S2 to the substrate, with R1 and R2 being approximately equal. Because R1 and R2 are close enough in value there is no significant interference pickup in the low frequency region. The shunt resistors can be formed from high-resistivity metal nitrides or cermets. The spacing between the substrate and S1 may be selected to make the capacitance between S1 and the substrate approximately equal to the capacitance between S2 and the substrate to substantially reduce interference pickup in the high frequency region.
    Type: Grant
    Filed: October 30, 2006
    Date of Patent: June 9, 2009
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Satoru Araki, John Contreras, Klaas Berend Klaassen, Ramona Marie Patterson, David John Seagle, Howard Gordon Zolla
  • CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE SENSOR WITH IMPEDANCE ADJUSTMENT
    Publication number: 20080100970
    Abstract: A current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) read head structure has the MR read head located between first and second shields (S1, S2) on a substrate with a shunt resistor R1 connecting S1 to the substrate and a shunt resistor R2 connecting S2 to the substrate, with R1 and R2 being approximately equal. Because R1 and R2 are close enough in value there is no significant interference pickup in the low frequency region. The shunt resistors can be formed from high-resistivity metal nitrides or cermets. The spacing between the substrate and S1 may be selected to make the capacitance between S1 and the substrate approximately equal to the capacitance between S2 and the substrate to substantially reduce interference pickup in the high frequency region.
    Type: Application
    Filed: October 30, 2006
    Publication date: May 1, 2008
    Applicant: HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS B.V.
    Inventors: Satoru Araki, John Contreras, Klaas Berend Klaassen, Ramona Marie Patterson, David John Seagle, Howard Gordon Zolla