Patents by Inventor Ramoothy Ramesh

Ramoothy Ramesh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Microelectronic piezoelectric structure and method of forming the same
    Patent number: 6750067
    Abstract: A high quality epitaxial layer of monocrystalline Pb(Zr,Ti)O3 can be grown overlying large silicon wafers by first growing an strontium titanate layer on a silicon wafer. The strontium titanate layer is a monocrystalline layer spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide.
    Type: Grant
    Filed: April 19, 2002
    Date of Patent: June 15, 2004
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Ramoothy Ramesh, Yu Wang, Jeffrey M. Finder, Kurt Eisenbeiser, Zhiyi Yu, Ravindranath Droopad
  • Microelectronic piezoelectric structure and method of forming the same
    Publication number: 20020164827
    Abstract: A high quality epitaxial layer of monocrystalline Pb(Zr,Ti)O3 can be grown overlying large silicon wafers by first growing an strontium titanate layer on a silicon wafer. The strontium titanate layer is a monocrystalline layer spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide.
    Type: Application
    Filed: April 19, 2002
    Publication date: November 7, 2002
    Inventors: Ramoothy Ramesh, Yu Wang, Jeffrey M. Finder, Kurt Eisenbeiser, Zhiyi Yu, Ravindranath Droopad
  • Microelectronic piezoelectric structure and method of forming the same
    Patent number: 6432546
    Abstract: A high quality epitaxial layer of monocrystalline Pb(Zr,Ti)O3 can be grown overlying large silicon wafers by first growing an strontium titanate layer on a silicon wafer. The strontium titanate layer is a monocrystalline layer spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide.
    Type: Grant
    Filed: July 24, 2000
    Date of Patent: August 13, 2002
    Assignee: Motorola, Inc.
    Inventors: Ramoothy Ramesh, Yu Wang, Jeffrey M. Finder, Kurt Eisenbeiser, Zhiyi Yu, Ravindranath Droopad