Patents by Inventor Ran ALKOKEN

Ran ALKOKEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Epitaxy metrology in fin field effect transistors
    Patent number: 11455715
    Abstract: There is provided a system and method of performing a measurement with respect to an epitaxy formed in a finFET, the epitaxy being separated with at least one adjacent epitaxy by at least one HK fin. The method comprises obtaining an image of the epitaxy and the at least one HK fin, and a gray level (GL) profile indicative of GL distribution of the image; detecting edges of the at least one HK fin; determining two inflection points of the GL profile within an area of interest in the image; performing a critical dimension (CD) measurement between the two inflection points; determining whether to apply correction to the CD measurement based on a GL ratio indicative of a relative position between the epitaxy and the at least one HK fin; and applying correction to the CD measurement upon the GL ratio meeting a predetermined criterion.
    Type: Grant
    Filed: February 16, 2021
    Date of Patent: September 27, 2022
    Assignee: APPLIED MATERIALS ISRAEL LTD.
    Inventors: Jitendra Pradipkumar Chaudhary, Roman Kris, Ran Alkoken, Sahar Levin, Chih-Chieh Chang, Einat Frishman
  • EPITAXY METROLOGY IN FIN FIELD EFFECT TRANSISTORS
    Publication number: 20220261979
    Abstract: There is provided a system and method of performing a measurement with respect to an epitaxy formed in a finFET, the epitaxy being separated with at least one adjacent epitaxy by at least one HK fin. The method comprises obtaining an image of the epitaxy and the at least one HK fin, and a gray level (GL) profile indicative of GL distribution of the image; detecting edges of the at least one HK fin; determining two inflection points of the GL profile within an area of interest in the image; performing a critical dimension (CD) measurement between the two inflection points; determining whether to apply correction to the CD measurement based on a GL ratio indicative of a relative position between the epitaxy and the at least one HK fin; and applying correction to the CD measurement upon the GL ratio meeting a predetermined criterion.
    Type: Application
    Filed: February 16, 2021
    Publication date: August 18, 2022
    Inventors: Jitendra Pradipkumar CHAUDHARY, Roman KRIS, Ran ALKOKEN, Sahar LEVIN, Chih-Chieh CHANG, Einat FRISHMAN