Abstract: Disclosed are a device of complex gas mixture detection based on optical-path-adjustable spectrum detection and a method therefor, and the device includes: a light source configured for generating an incident beam and emitting the incident beam into an optical gas cell; the optical gas cell, including a cavity configured for accommodating a gas sample, and a reflection module group configured for reflecting the incident beam and a track arranged in the cavity, where the track is consistent with a light path of the light beam in the cavity; a detector module that is connected with the track in a relatively movable manner and is configured for receiving light beams and obtaining spectral data, where an optical path is changed by moving the detector module relative to the track; and a data acquisition unit that is configured for acquiring the spectral data obtained by the detector module.

Abstract: The present invention features interferon-free therapies for the treatment of HCV. Preferably, the treatment is over a shorter duration of treatment, such as no more than 12 weeks. In one aspect, the treatment comprises administering at least two direct acting antiviral agents to a subject with HCV infection, wherein the treatment lasts for 12 weeks and does not include administration of either interferon or ribavirin, and said at least two direct acting antiviral agents comprise (a) Compound 1 or a pharmaceutically acceptable salt thereof and (b) Compound 2 or a pharmaceutically acceptable salt thereof.

Abstract: A heat exchanger with recuperating and condensing functions is provided. The heat exchanger includes a pressure vessel, a recuperating pipe and a cooling stream pipe. The pressure vessel has an inlet, an outlet and a baffle. The baffle, located between the inlet and the outlet, divides the interior of the pressure vessel into a working fluid recuperating region and a working fluid condensing region. The recuperating pipe is disposed in the pressure vessel, and passes through the working fluid recuperating region to heat a liquid working fluid flowing through the recuperating pipe. The cooling stream pipe is disposed in the pressure vessel, and passes through the working fluid condensing region to cool a vapor working fluid flowing into the pressure vessel. The vapor working fluid passes through the working fluid recuperating region and then flows into the working fluid condensing region.

Abstract: A method of producing a leadframe is provided, the method including the steps of providing a substrate, plating the substrate with a layer of tin, plating a layer of nickel over the layer of tin, and thereafter plating one or more protective layers over the layer of nickel. The leadframe may thereafter be heated to produce one or more intermetallic layers comprising tin, which impedes the out-diffusion of copper from a base material of the leadframe to the surface thereof.

Abstract: A bonding tool and method for bonding a semiconductor chip to a surface is provided wherein the bonding tool includes a bonding tip comprising a ceramic material, preferably titanium carbide. The bonding tip is operative to hold the chip and a bonding energy generator such as an ultrasonic transducer is coupled to the bonding tip for applying bonding energy to the bonding tip and the chip to bond the chip to the surface. The bonding tip may further include martensite such that the titanium carbide is present in a hard phase and the martensite is present in a soft phase as a binder for the same.

Abstract: A wire clamping plate is provided for a wire clamp that is adapted to contact a length of metallic wire when the wire clamp is applying a clamping force on the wire. The wire clamping plate comprises doped silicon carbide, which makes it electrically conductive and exhibit a high level of wear resistance.

Abstract: A method of producing a leadframe is provided comprising the steps of providing a substrate, plating the substrate with a layer of tin, plating a layer of nickel over the layer of tin, and thereafter plating one or more protective layers over the layer of nickel. The leadframe may thereafter be heated to produce one or more intermetallic layers comprising tin, which impedes the out-diffusion of copper from a base material of the leadframe to the surface thereof.

Abstract: A wire clamping plate is provided for a wire clamp that is adapted to contact a length of metallic wire when the wire clamp is applying a clamping force on the wire. The wire clamping plate comprises doped silicon carbide, which makes it electrically conductive and exhibit a high level of wear resistance.

Abstract: A bonding tool and method for bonding a semiconductor chip to a surface is provided wherein the bonding tool includes a bonding tip comprising a ceramic material, preferably titanium carbide. The bonding tip is operative to hold the chip and a bonding energy generator such as an ultrasonic transducer is coupled to the bonding tip for applying bonding energy to the bonding tip and the chip to bond the chip to the surface. The bonding tip may further include martensite such that the titanium carbide is present in a hard phase and the martensite is present in a soft phase as a binder for the same.

Abstract: The invention provides an apparatus for die attachment onto a substrate including non-metallic material, and metallic material that is adapted to receive a die having a eutectic coating. A heating conduit is provided through which the substrate is movable for heating the metallic material to a eutectic bonding temperature to facilitate bonding between the die and the metallic material at a die-attach position. An induction heating device at the die-attach position heats the metallic material of the substrate to the eutectic bonding temperature prior to attaching a die onto the metallic material.

Abstract: The invention provides an apparatus for die attachment onto a substrate including non-metallic material, and metallic material that is adapted to receive a die having a eutectic coating. A heating conduit is provided through which the substrate is movable for heating the metallic material to a eutectic bonding temperature to facilitate bonding between the die and the metallic material at a die-attach position. An induction heating device at the die-attach position heats the metallic material of the substrate to the eutectic bonding temperature prior to attaching a die onto the metallic material.