Abstract: A method of producing a leadframe is provided, the method including the steps of providing a substrate, plating the substrate with a layer of tin, plating a layer of nickel over the layer of tin, and thereafter plating one or more protective layers over the layer of nickel. The leadframe may thereafter be heated to produce one or more intermetallic layers comprising tin, which impedes the out-diffusion of copper from a base material of the leadframe to the surface thereof.

Abstract: A bonding tool and method for bonding a semiconductor chip to a surface is provided wherein the bonding tool includes a bonding tip comprising a ceramic material, preferably titanium carbide. The bonding tip is operative to hold the chip and a bonding energy generator such as an ultrasonic transducer is coupled to the bonding tip for applying bonding energy to the bonding tip and the chip to bond the chip to the surface. The bonding tip may further include martensite such that the titanium carbide is present in a hard phase and the martensite is present in a soft phase as a binder for the same.

Abstract: A wire clamping plate is provided for a wire clamp that is adapted to contact a length of metallic wire when the wire clamp is applying a clamping force on the wire. The wire clamping plate comprises doped silicon carbide, which makes it electrically conductive and exhibit a high level of wear resistance.

Abstract: A method of producing a leadframe is provided comprising the steps of providing a substrate, plating the substrate with a layer of tin, plating a layer of nickel over the layer of tin, and thereafter plating one or more protective layers over the layer of nickel. The leadframe may thereafter be heated to produce one or more intermetallic layers comprising tin, which impedes the out-diffusion of copper from a base material of the leadframe to the surface thereof.

Abstract: A wire clamping plate is provided for a wire clamp that is adapted to contact a length of metallic wire when the wire clamp is applying a clamping force on the wire. The wire clamping plate comprises doped silicon carbide, which makes it electrically conductive and exhibit a high level of wear resistance.

Abstract: A bonding tool and method for bonding a semiconductor chip to a surface is provided wherein the bonding tool includes a bonding tip comprising a ceramic material, preferably titanium carbide. The bonding tip is operative to hold the chip and a bonding energy generator such as an ultrasonic transducer is coupled to the bonding tip for applying bonding energy to the bonding tip and the chip to bond the chip to the surface. The bonding tip may further include martensite such that the titanium carbide is present in a hard phase and the martensite is present in a soft phase as a binder for the same.

Abstract: The invention provides an apparatus for die attachment onto a substrate including non-metallic material, and metallic material that is adapted to receive a die having a eutectic coating. A heating conduit is provided through which the substrate is movable for heating the metallic material to a eutectic bonding temperature to facilitate bonding between the die and the metallic material at a die-attach position. An induction heating device at the die-attach position heats the metallic material of the substrate to the eutectic bonding temperature prior to attaching a die onto the metallic material.

Abstract: The invention provides an apparatus for die attachment onto a substrate including non-metallic material, and metallic material that is adapted to receive a die having a eutectic coating. A heating conduit is provided through which the substrate is movable for heating the metallic material to a eutectic bonding temperature to facilitate bonding between the die and the metallic material at a die-attach position. An induction heating device at the die-attach position heats the metallic material of the substrate to the eutectic bonding temperature prior to attaching a die onto the metallic material.