Abstract: A resonator for rf frequencies, especially microwave, in telecommunications systems, with an extremely stable resonant frequency over a desired operating temperature range, of predetermined width (Y) and thickness (X) and having a predetermined length (Z) in the direction of propagation for achieving a desired resonance, comprises a dielectric substrate of rutile, and first and second temperature compensating layers of sapphire on two opposite faces of the substrate and extending along the length of the substrate, these sapphire layers having a predetermined thickness, and first and second superconducting layers formed on the outer surfaces of the temperature compensating layers.

Abstract: In order to provide a resonator for rf, especially microwave frequencies, for use in mobile telecommunications systems and satellite communications systems, with a particularly high Q value, the resonator, of predetermined width (Y) and thickness (X), and having a predetermined length (Z) in the direction of propagation for achieving a desired resonance, comprises a dielectric substrate, and first and second dielectric layers on two opposite faces of the substrate forming mirrors at which electromagnetic waves propagating along the length of the substrate will experience internal reflection, the dielectric layers having a predetermined thickness and having a dielectric constant less than that of the substrate. First and second conductive layers are formed on the outer surfaces of the dielectric mirrors. The substrate may be formed of sapphire and the dielectric mirrors of MgO. The conductive layers may be normal conductors or superconducting HTS layers.

Abstract: In UMTS or EDGE or a similar network, each new call specifies a required QoS on handover (a Seamless Service Descriptor) and an acceptable level of degradation (Service Degradation Descriptor); a call is only accepted into a cell if the QoS requirements in the two descriptors can be met, and if the QoS requirement in the two descriptors of existing calls will not be unacceptably affected.

Abstract: A mobile telephone system includes a base station which establishes a link with a selected mobile station. The received signal from the mobile station will include a noise component as well as a possible interference component from another mobile station operating at the same frequency in another cell. The base station has a trellis based equalization system which operates on the assumption that the received signal includes components which have a predominantly Gaussian characteristic. A switch controller determines when the interference component (which is non-gaussian) in the received signal becomes a dominant component and operates to switch a spatio-temporal filter into the circuit instead of the trellis based equalization system, to improve the bit error rate performance.

Abstract: A time division multiple access cellular radio telecommunications network is disclosed, in which physical channels may be reused in the same cell. Reused channels on the up link are differentiated by a time shift between them. Same cell reuse (SCR) can thus be implemented in a TDMA (GSM) system without assigning different signatures to SDMA users sharing the same physical channel.

Abstract: In a GPRS or EDGE or UMTS system, a real-time video service is provided by selecting one of a small number, e.g. four, predetermined channel coding rates applicable for video, applying the rate to the video data in the application layer, and transmitting the data over the radio interface to a mobile system together with, for each burst, a header indicating the selected coding rate and a temporary flow indicator. The short header allows video payload capacity to be increased. One of the predetermined channel coding rates is a {fraction (1/1)} or transparent rate.

Abstract: Apparatus and method for iteratively decoding a signal are provided. The apparatus includes a central pool of resources for iteratively decoding signals. The central pool may run a plurality of iterative decoding processes, each process being allocated to a signal processing unit upon request and depending upon resource availability.

Abstract: The key of the invention is to introduce an interoperability device in a communication system which integrates an IEEE 802.11 transceiver and a Bluetooth transceiver. The device prevents that one transceiver is transmitting while the other is receiving, which would cause interference at the receiving transceiver. In addition, the device preferably prevents that both systems are transmitting at the same time to avoid interference at the receiving device(s). Optionally the device prohibits simultaneous reception of both transceivers. In that way the radio receiver can be shared between the devices, allowing a cheaper and smaller hardware design.

Abstract: A process for making a MOS device on a silicon substrate includes the step of forming a buried layer of germanium-silicon alloy in the substrate, or, alternatively, a buried layer of silicon enclosed between thin, germanium-rich layers. This buried layer is doped with boron, and tends to confine the boron during annealing and oxidation steps. The process includes a step of exposing the substrate to an oxidizing atmosphere such that an oxide layer 10 .ANG.-500 .ANG. thick is grown on the substrate.

Abstract: A semiconductor integrated circuit, and process for its manufacture, are disclosed which contains both n.sup.+ and p.sup.+ gates that do not pose a risk of dopant interdiffusion. Both n.sup.+ and p.sup.+ gates may be fabricated by conventional means. The gate structures are severed over the tub boundaries. A titanium nitride interconnective layer is deposited and patterned over the gates. The interconnective layer preserves connectivity between the n.sup.+ and p.sup.+ gates without risk of deleterious dopant interdiffusion.

Abstract: A method for manufacturing an MOS device, such as a PMOS transistor, on a silicon wafer. The method includes steps leading to the formation of a polysilicon gate electrode, and at least one ion-implantation step for forming source and drain junction regions in the silicon wafer. The method further comprises, before the ion-implantation step, the step of forming a first sidewall contactingly disposed adjacent the polysilicon gate electrode. The ion-implantation step is then performed such that the resulting source and drain junction regions are at least partially excluded from that portion of the silicon wafer that directly underlies the polysilicon gate electrode and the sidewall.

Abstract: A silicon MOSFET is provided, which can be made with an effective channel length of under one micrometer without incurring severe short-channel effects. The MOSFET includes first and second channel regions located between the source and drain regions, the first channel region overlaying the second channel region. The second channel region has a higher carrier density than the first channel region, and functions as a buried ground plane.