Abstract: Provided herein are fusion protein constructs that can bind a complement-associated antigen, comprising a targeting moiety and a complement modulator protein, or a fragment thereof or a variant thereof. The targeting moiety is an antibody or an antigen binding fragment thereof, in some examples. Further provided are methods of using the fusion protein constructs, for example, in treating complement mediation conditions.

Abstract: Provided herein are fusion protein constructs that can bind a complement-associated antigen, comprising a targeting moiety and a complement modulator protein, or a fragment thereof or a variant thereof. The targeting moiety is an antibody or an antigen binding fragment thereof, in some examples. Further provided are methods of using the fusion protein constructs, for example, in treating complement mediation conditions.

Abstract: A light-emitting device and a manufacturing method thereof are provided. The light-emitting device includes a substrate, an epitaxial blocking layer, and a light-emitting epitaxial structure. The substrate has a surface, in which the surface includes a plurality of protruding parts and a plurality of recess parts relative to the protruding parts. The epitaxial blocking layer disposed on the substrate covers the recess parts and exposes the protruding parts. The light-emitting epitaxial structure disposed on the substrate is connected to the protruding parts and is disposed above the recess parts. The light-emitting epitaxial structure is formed by using the protruding parts as a growth surface thereof so as to have a better crystalline quality.

Abstract: Provided herein are fusion protein constructs that can bind a complement-associated antigen, comprising a targeting moiety and a complement modulator protein, or a fragment thereof or a variant thereof. The targeting moiety is an antibody or an antigen binding fragment thereof, in some examples. Further provided are methods of using the fusion protein constructs, for example, in treating complement mediation conditions.

Abstract: The disclosure discloses wet electrostatic classification device for ultrafine powder based on rotating flow field, which belongs to the field of ultrafine powder classification equipment. The wet electrostatic classification device for ultrafine powder of the disclosure includes a cylinder body. The cylinder body is a hollow cavity. A material conveying shaft and a rotating shaft are disposed in the cylinder body. Outlets are formed in a circumferential wall of the cylinder body. A deceleration motor is mounted on the lower end through a machine frame. First electrode pieces are disposed on an inner wall. The spray head is mounted between the material conveying shaft and the rotating shaft. The rotating shaft is connected to the deceleration motor through a coupling. Second electrode pieces are disposed on outer walls of the material conveying shaft and the rotating shaft. The spray head is configured to spray a material into the cylinder body to form a rotating flow.

Abstract: The disclosure discloses wet electrostatic classification device for ultrafine powder based on rotating flow field, which belongs to the field of ultrafine powder classification equipment. The wet electrostatic classification device for ultrafine powder of the disclosure includes a cylinder body. The cylinder body is a hollow cavity. A material conveying shaft and a rotating shaft are disposed in the cylinder body. Outlets are formed in a circumferential wall of the cylinder body. A deceleration motor is mounted on the lower end through a machine frame. First electrode pieces are disposed on an inner wall. The spray head is mounted between the material conveying shaft and the rotating shaft. The rotating shaft is connected to the deceleration motor through a coupling. Second electrode pieces are disposed on outer walls of the material conveying shaft and the rotating shaft. The spray head is configured to spray a material into the cylinder body to form a rotating flow.

Abstract: Provided herein are fusion protein constructs that can bind a complement-associated antigen, comprising a targeting moiety and a complement modulator protein, or a fragment thereof or a variant thereof. The targeting moiety is an antibody or an antigen binding fragment thereof, in some examples. Further provided are methods of using the fusion protein constructs, for example, in treating complement mediation conditions.

Abstract: A gas sensor includes a substrate, a thin film metallic glass, an ultrananocrystalline diamond layer and a sensor structure. The thin film metallic glass is formed on the substrate. The ultrananocrystalline diamond layer partially covers the thin film metallic glass. The sensor structure includes a seed layer formed on the ultrananocrystalline diamond layer and a plurality of nanostructures formed on the seed layer.

Abstract: A light-emitting device and a manufacturing method thereof are provided. The light-emitting device includes a substrate, an epitaxial blocking layer, and a light-emitting epitaxial structure. The substrate has a surface, in which the surface includes a plurality of protruding parts and a plurality of recess parts relative to the protruding parts. The epitaxial blocking layer disposed on the substrate covers the recess parts and exposes the protruding parts. The light-emitting epitaxial structure disposed on the substrate is connected to the protruding parts and is disposed above the recess parts. The light-emitting epitaxial structure is formed by using the protruding parts as a growth surface thereof so as to have a better crystalline quality.

Abstract: A method for MOM capacitance value control is disclosed. The method comprises: S01: setting a target thicknesses for each metal layers; S02: after forming a current metal layer, measuring a thickness of the current metal layer; when the thickness of the current metal layer is equal to or less than a threshold value, then turning to step S03; S03: calculating multiple capacitance variations related to the current metal layer according to the thickness of the current metal layer; wherein each of the capacitance variation related to the current metal layer is between an actual capacitance value of a MOM capacitor combination associated with the current metal layer and a target capacitance value of the same MOM capacitor combination; S04: calculating updated target thicknesses for all subsequent metal layers according to the capacitance variations related to the current metal layer.

Abstract: A semiconductor memory device includes a first inverter, a second inverter, a first and second inner access transistors, and a first and second outer access transistors. The first inverter includes a first pull-up transistor and a first pull-down transistor, the second inverter includes a second pull-up transistor (PL2) and a second pull-down transistor, and the first inverter and the second inverter forms a latch circuit. The first and second inner access transistors and the first and second outer access transistors are electrically connected to the latch circuit, and channel widths of the second inner access transistor and the second outer access transistor are different from each other.

Abstract: A method for MOM capacitance value control is disclosed. The method comprises: S01: setting a target thicknesses for each metal layers; S02: after forming a current metal layer, measuring a thickness of the current metal layer; when the thickness of the current metal layer is equal to or less than a threshold value, then turning to step S03; S03: calculating multiple capacitance variations related to the current metal layer according to the thickness of the current metal layer; wherein each of the capacitance variation related to the current metal layer is between an actual capacitance value of a MOM capacitor combination associated with the current metal layer and a target capacitance value of the same MOM capacitor combination; S04: calculating updated target thicknesses for all subsequent metal layers according to the capacitance variations related to the current metal layer.

Abstract: The present disclosure relates to electronic devices, processes and systems for presentations of notifications by a digital television. In one embodiment, a method for presentation of notifications includes running, by a digital television, a notifications service, wherein the notification service provides an architecture for exchange and encapsulation of notification objects with respect to applications and components of the digital television, querying by a notifications controller of the notifications service one or more notification clients, and receiving, by the notification controller, a notification object from the notifications client, wherein the notification object includes data for implementation of the notification and content of the notification object.

Abstract: An ultraviolet sensor comprises a glass substrate, a semiconductor structure, an electrode layer and a thin film metallic glass. The semiconductor structure comprises a semiconductor seed layer formed on the glass substrate and a plurality of semiconductor nanostructures formed on the semiconductor seed layer. The electrode layer is formed between the semiconductor seed layer and the plurality of semiconductor nanostructures. The thin film metallic glass is in contact with the semiconductor structure, wherein an interface between the thin film metallic glass and the semiconductor structure forms a Schottky barrier junction to inhibit dark current and increase signal-to-noise ratio.

Abstract: A system for dual chirp modulation includes a transmission unit, a receiving unit, and a transmission channel. A modulation module of the transmission unit is configured to receive binary data and modulate the binary data by a first dual chirp sequence and a second dual chirp sequence for generating an output signal. Then the output signal is converted from digital form to analog form by a digital to analog converter. A transmission channel is configured to receive the output signal converted to analog form, wherein the output signal converted to analog folio passes the transmission channel for generating a received signal. An analog to digital converter converts the received signal from analog form to digital form and a demodulation module demodulates the received signal with digital form, by the first dual chirp sequence and the second dial chirp sequence, for recovering the binary data.

Abstract: A method of manufacturing an anti-counterfeit ink is provided. A tungsten oxide nanowire is provided. A hydrophilic treatment is performed to the tungsten oxide nanowire to form a tungsten oxide nanowire with hydrophilicity. The tungsten oxide nanowire with hydrophilicity and an ink are mixed to form an anti-counterfeit ink.

Abstract: A system for dual chirp modulation includes a transmission unit, a receiving unit, and a transmission channel. A modulation module of the transmission unit is configured to receive binary data and modulate the binary data by a first dual chirp sequence and a second dual chirp sequence for generating an output signal. Then the output signal is converted from digital form to analog form by a digital to analog converter. A transmission channel is configured to receive the output signal converted to analog form, wherein the output signal converted to analog folio passes the transmission channel for generating a received signal. An analog to digital converter converts the received signal from analog form to digital form and a demodulation module demodulates the received signal with digital form, by the first dual chirp sequence and the second dial chirp sequence, for recovering the binary data.

Abstract: The present invention discloses a frame buffer pixel circuit for a LCoS display device, wherein said circuit consists of a first transistor (M1), a second transistor (M2), a third transistor (M3), a fourth transistor (M4), a fifth transistor (M5), a sixth transistor (M6), a storage capacitor (C1) and a pixel capacitor (C2), wherein, the first transistor (M1) forms a pre-charge circuit, the second transistor (M2) and the third transistor (M3) form a threshold voltage generating circuit, the storage capacitor (C1) forms a sample and hold circuit, the fourth transistor (M4), the fifth transistor (M5) and the pixel capacitor (C2) form an input data voltage read-in circuit, and the sixth transistor (M6) forms a discharge circuit.

Abstract: A method of manufacturing an anti-counterfeit ink is provided. A tungsten oxide nanowire is provided. A hydrophilic treatment is performed to the tungsten oxide nanowire to form a tungsten oxide nanowire with hydrophilicity. The tungsten oxide nanowire with hydrophilicity and an ink are mixed to form an anti-counterfeit ink.

Abstract: A fabrication method of carbon nanotube field emission cathode is described as follows. Firstly, a composite plating solution including an electroless metal plating solution and a carbon nanotube powder disposed therein is provided. Then, a substrate is provided. The substrate is disposed in the composite plating solution so that an electroless composite plating process for forming a composite material layer on a surface of the substrate is performed. The composite material layer includes a carbon nanotube powder and a metal layer wrapping the carbon nanotube powder.