Patents by Inventor Ran-Jin Lin

Ran-Jin Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20080036383
    Abstract: A structure of fluorescent lamp, which includes a sealed tube, electrode sets, and a passive luminous coating layer or a passive luminous body, is provided. The sealed tube is filled with a glow discharge medium, and electrode sets are assembled on two ends of the sealed tube to be contacted with the glow discharge medium and provide an electrical power to generate the electrical-glow-discharge of the glow discharge medium for emitting a glow-discharge light. The passive luminous coating layer or the passive luminous body is disposed on an outer surface of the sealed tube. The passive luminous coating layer or the passive luminous body absorbs the glow-discharge light to emit a luminous light with corresponding wavelength without being contacted with the glow discharge medium. Thus the interaction between glow discharge medium in the sealed tube and the luminous material is prevented.
    Type: Application
    Filed: August 9, 2006
    Publication date: February 14, 2008
    Inventor: Ran-Jin Lin
  • Patent number: 6768555
    Abstract: Within a Fabry-Perot filter apparatus, a method for fabricating the Fabry-Perot filter apparatus and a method for operating the Fabry-Perot filter apparatus, there is employed a Fabry-Perot filter and at least one color filter layer, both assembled over a substrate and covering at least two optical transducer elements which are formed within the substrate. Within the foregoing apparatus and methods, the at least one color filter layer comprises at least two color filter elements of separate color, each registered with a separate optical transducer element within the at least two optical transducer elements. The apparatus and methods provide for enhanced optical discrimination properties.
    Type: Grant
    Filed: March 21, 2002
    Date of Patent: July 27, 2004
    Assignee: Industrial Technology Research Institute
    Inventors: Li-Jui Chen, Ran-Jin Lin
  • Publication number: 20030179383
    Abstract: Within a Fabry-Perot filter apparatus, a method for fabricating the Fabry-Perot filter apparatus and a method for operating the Fabry-Perot filter apparatus, there is employed a Fabry-Perot filter and at least one color filter layer, both assembled over a substrate and covering at least two optical transducer elements which are formed within the substrate. Within the foregoing apparatus and methods, the at least one color filter layer comprises at least two color filter elements of separate color, each registered with a separate optical transducer element within the at least two optical transducer elements. The apparatus and methods provide for enhanced optical discrimination properties.
    Type: Application
    Filed: March 21, 2002
    Publication date: September 25, 2003
    Applicant: Industrial Technology Research Institute
    Inventors: Li-Jui Chen, Ran-Jin Lin
  • Patent number: 6621139
    Abstract: A method for fabricating a tunable, 3-dimensional solenoid utilizing CMOS fabrication technology and a back end process without using photomasks are described. In the method, two curved arms each formed of a bi-layered metal structure from metals that have different coefficients of thermal expansion for residual stress are utilized for connecting to two ends of an inductor coil formed of AlCu between the two arms. When the insulating layer of silicon dioxide is removed from the curved arms, the free ends of the arms curve up and thus, raise the inductor coil away from the surface of the semiconductor substrate into a 3-dimensional structure. When electrical voltage is applied between lower electrodes formed on the substrate and the curved arms, electrostatic force is generated to further control the length of the inductor coil by pulling down or raising the curved arms.
    Type: Grant
    Filed: December 31, 2001
    Date of Patent: September 16, 2003
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd
    Inventors: Kaihsiang Yen, Jing-Hung Chiou, Ran-Jin Lin, Jih-Wen Wang, Nai-Hao Kuo
  • Patent number: 6600644
    Abstract: A microelectronic tunable capacitor and a method for fabricating the capacitor are described. The capacitor is formed by a micro-actuator, a first fixed capacitor plate and a second swayable capacitor plate suspended over the first plate. The micro-actuator is formed by a pair of fixed electrodes positioned spaced-apart from each other sandwiching without contact a suspended arm electrode swayable between the pair of fixed eletrodes. The second swayable capacitor plate is mounted to the suspended arm and sways by an electrostatic force between the pair of fixed electrodes to suitably adjust a desirable capacitance for the tunable capacitor.
    Type: Grant
    Filed: September 3, 2002
    Date of Patent: July 29, 2003
    Assignee: Industrial Technology Research Institute
    Inventors: Jing-Hung Chiou, Kai-Hsiang Yen, Ran-Jin Lin, Jia-Hroung Wu, Kun-Ho Chou
  • Publication number: 20030122207
    Abstract: A method for fabricating a tunable, 3-dimensional solenoid utilizing CMOS fabrication technology and a back end process without using photomasks are described. In the method, two curved arms each formed of a bi-layered metal structure from metals that have different coefficients of thermal expansion for residual stress are utilized for connecting to two ends of an inductor coil formed of AlCu between the two arms. When the insulating layer of silicon dioxide is removed from the curved arms, the free ends of the arms curve up and thus, raise the inductor coil away from the surface of the semiconductor substrate into a 3-dimensional structure. When electrical voltage is applied between lower electrodes formed on the substrate and the curved arms, electrostatic force is generated to further control the length of the inductor coil by pulling down or raising the curved arms.
    Type: Application
    Filed: December 31, 2001
    Publication date: July 3, 2003
    Applicant: Industrial Technology Research Institute
    Inventors: Kaihsiang Yen, Jing-Hung Chiou, Ran-Jin Lin, Jih-Wen Wang, Nai-Hao Kuo
  • Patent number: 6043492
    Abstract: A non-invasive blood glucose meter includes a near-infrared energy analyzer which includes a light filter assembly of two Fabry-Perot interferometers and a photosensor. The near-infrared energy analyzer detects near-infrared energy absorbed by a human or animal body and generates spectra of such absorption so that the blood glucose content in the body may be analyzed. In order to provide stable energy absorption information of the blood, special designs are provided to stabilize the light source, to calibrate the spectrum and to obviate the noise from the heartbeats of the body. A single crystal silicon elastic power source is used to provide the driving power of the Fabry-Perot interferometer to avoid mechanical hysteresis.
    Type: Grant
    Filed: October 27, 1997
    Date of Patent: March 28, 2000
    Assignee: Industrial Technology Research Institute
    Inventors: Shih-Ping Lee, Ran-Jin Lin, Hsiu-Hsiang Chen, Kuo-Kang Liu
  • Patent number: 5552371
    Abstract: An apparatus and method for continuously monitoring the liquid nitrogen level a liquid nitrogen container and automatically refilling liquid nitrogen from a liquid nitrogen reservoir when the liquid nitrogen in the container falls below a predetermined level. The apparatus comprises a liquid nitrogen level sensing element, which contains a superconducting material, such as a YbaCuO type superconductiing material, disposed on a non-conducting substrate, such as magnesium oxide. The superconducting material is selected such that it has a critical temperature approximately equal to the boiling point temperature of liquid nitrogen. The superconducting material is placed near the predetermined level and, under normal conditions, the superconducting material exhibits zero or near zero resistance.
    Type: Grant
    Filed: May 17, 1994
    Date of Patent: September 3, 1996
    Assignee: Industrial Technology Research Institute
    Inventors: Yeow-Chin Chen, Ran-Jin Lin, Ru-Shi Liu
  • Patent number: 5488031
    Abstract: A process for making high temperature superconducting oxide films comprising using a sintered body of Y-Ba-Cu-O or Bi-Sr-Ca-Cu-O oxide as a sputtering target and using a mixture of argon and oxygen as a sputtering gas, forming glow discharge between the substrate and the target under a pressure of 0.5-2.5 torr and at a sputtering current density of 5-35 mA/cm.sup.2, and then cooling the substrate after the oxide film has been grown to a desired thickness. The critical temperature of the in-situ produced superconducting oxide film of Y-Ba-Cu-O is 90 K and that of Ba-Sr-Ca-Cu-O is 80 K.An apparatus for the preparation of high temperature superconducting oxide films is also provided. The apparatus for in-situ making such high temperature superconducting oxide film is easy to heat the substrate and control its temperature without problems of conventional deposition methods.
    Type: Grant
    Filed: April 5, 1995
    Date of Patent: January 30, 1996
    Assignee: Industrial Technology Research Institute
    Inventor: Ran-Jin Lin
  • Patent number: 5441623
    Abstract: A process for making high temperature superconducting oxide films comprising using a sintered body of Y--Ba--Cu--O or Bi--Sr--Ca--Cu--O oxide as a sputtering target and using a mixture of argon and oxygen as a sputtering gas, forming glow discharge between the substrate and the target under a pressure of 0.5-2.5 torr and at a sputtering current density of 5-35 mA/cm.sup.2, and then cooling the substrate after the oxide film has been grown to a desired thickness. The critical temperature of the in-situ produced superconducting oxide film of Y--Ba--Cu--O is 90 K. and that of Ba--Sr--Ca--Cu--O is 80 K.An apparatus for the preparation of high temperature superconducting oxide films is also provided. The apparatus for in-situ making such high temperature superconducting oxide film is easy to heat the substrate and control its temperature without problems of conventional deposition methods.
    Type: Grant
    Filed: January 3, 1994
    Date of Patent: August 15, 1995
    Assignee: Industrial Technology Research Institute
    Inventor: Ran-Jin Lin