Abstract: The present disclosure provides a blending method of high-quality and dual-purpose flour for bread and noodles, belonging to the technical field of flour processing. The method includes: selecting flour of a high-quality and dual-purpose wheat variety for bread and noodles as a high-quality basic flour for blending; according to a large gradient experimental design, selecting a gradient range ratio with a sedimentation value ?46.0 mL and a dough development time ?9.6 min, followed by subdividing for small gradient experiments; selecting a ratio with flour sedimentation value and dough development time that reach an ideal value to blend a large amount of flour; and making bread and noodles for scoring, followed by determining a blending ratio if a scoring result reaches an ideal value.

Abstract: An object drag method includes a first terminal that displays an object on a display of the first terminal. The first terminal receives a drag operation from a user. The drag operation initiates a drag for the object. The first terminal displays, on the display of the first terminal in response to the drag operation, an animation in which the object moves with the drag operation. The first terminal sends drag data to a second terminal after determining that a drag intent of the user is a cross-device drag. The drag data enables the second terminal to display the object on a display of the second terminal.

Abstract: A projection method and a terminal device, including responding, by a transmit end, to a screen projection instruction, obtaining a real-time interface of an application program on which screen projection is to be performed and device information of one or more receive ends, obtaining a user experience score of each receive end of the one or more receive ends by scoring a visual effect, sound effect, and interaction complexity of each receive end based on the device information, obtaining, based on the user experience score, first data on which screen projection is to be performed and that is at least one of a video stream, an audio stream, or a user interface control, obtaining a control layout file of the user interface control in response to the first data having the user interface control, and sending, to a corresponding receive end, the first data and the control layout file.

Abstract: A projection method and a terminal device, including responding, by a transmit end, to a screen projection instruction, obtaining a real-time interface of an application program on which screen projection is to be performed and device information of one or more receive ends, obtaining a user experience score of each receive end of the one or more receive ends by scoring a visual effect, sound effect, and interaction complexity of each receive end based on the device information, obtaining, based on the user experience score, first data on which screen projection is to be performed and that is at least one of a video stream, an audio stream, or a user interface control, obtaining a control layout file of the user interface control in response to the first data having the user interface control, and sending, to a corresponding receive end, the first data and the control layout file.

Abstract: A video playing method, a device, and a system are provided. The method includes: receiving, by a VR device, a first-resolution VR video stream of a first viewing angle and a second-resolution VR video stream of a full viewing angle that are sent by a server, where the first resolution is greater than the second resolution; playing an image of the first viewing angle by using the VR video stream of the first viewing angle; when determining that the viewing angle changes, playing an image of a current viewing angle by using the first or both of the VR video stream of the full viewing angle and the VR video stream of the first viewing angle; sending, to the server, viewing angle information that carries a parameter for indicating a changed-to second viewing angle; receiving a first-resolution VR video stream of the second viewing angle sent by the server.

Abstract: A video playing method, a device, and a system are provided. The method includes: receiving, by a VR device, a first-resolution VR video stream of a first viewing angle and a second-resolution VR video stream of a full viewing angle that are sent by a server, where the first resolution is greater than the second resolution; playing an image of the first viewing angle by using the VR video stream of the first viewing angle; when determining that the viewing angle changes, playing an image of a current viewing angle by using the first or both of the VR video stream of the full viewing angle and the VR video stream of the first viewing angle; sending, to the server, viewing angle information that carries a parameter for indicating a changed-to second viewing angle; receiving a first-resolution VR video stream of the second viewing angle sent by the server.

Abstract: Example embodiments relate to a resistive random access memory (RRAM) and a method of manufacturing the RRAM. A RRAM according to example embodiments may include a lower electrode, which may be formed on a lower structure (e.g., substrate). A resistive layer may be formed on the lower electrode, wherein the resistive layer may include a transition metal dopant. An upper electrode may be formed on the resistive layer. Accordingly, the transition metal dopant may form a filament in the resistive layer that operates as a current path.

Abstract: Provided is an electromechanical switch and a method of manufacturing the same. The electromechanical switch includes an elastic conductive layer that moves by the application of an electric field, wherein the elastic conductive layer includes at least one layer of graphene.

Abstract: Example embodiments relate to a resistive random access memory (RRAM) and a method of manufacturing the RRAM. A RRAM according to example embodiments may include a lower electrode, which may be formed on a lower structure (e.g., substrate). A resistive layer may be formed on the lower electrode, wherein the resistive layer may include a transition metal dopant. An upper electrode may be formed on the resistive layer. Accordingly, the transition metal dopant may form a filament in the resistive layer that operates as a current path.

Abstract: A resistive random access memory (RRAM) having a solid solution layer and a method of manufacturing the RRAM are provided. The RRAM includes a lower electrode, a solid solution layer on the lower electrode, a resistive layer on the solid solution layer, and an upper electrode on the resistive layer. The method of manufacturing the RRAM includes forming a lower electrode, forming a solid solution layer on the lower electrode, forming a resistive layer on the solid layer and forming an upper electrode on the resistive layer, wherein the RRAM is formed of a transition metal solid solution.

Abstract: Provided are a field effect transistor, a logic circuit including the same and methods of manufacturing the same. The field effect transistor may include an ambipolar layer that includes a source region, a drain region, and a channel region between the source region and the drain region, wherein the source region, the drain region, and the channel region may be formed in a monolithic structure, a gate electrode on the channel region, and an insulating layer separating the gate electrode from the ambipolar layer, wherein the source region and the drain region have a width greater than that of the channel region in a second direction that crosses a first direction in which the source region and the drain region are connected to each other.

Abstract: Provided is a cross-point latch and a method of operating the cross-point latch. The cross-point latch includes a signal line, two control lines crossing the signal line, and unipolar switches disposed at crossing points between the signal line and the control lines.

Abstract: An inductor may include a conductive line including a material in which an electrical resistance varies depending on an electric field applied to the material and/or first and second electrodes electrically connected to first and second end portions of the conductive line, respectively. A method of operating an inductor may include applying current to a conductive line of the inductor. The conductive line may include a material in which an electrical resistance may vary depending on an electric field applied to the material. The current may be applied to the conductive line via first and second electrodes electrically connected to first and second end portions of the conductive line, respectively.

Abstract: A Schottky diode and a memory device including the same are provided. The Schottky diode includes a first metal layer and an Nb-oxide layer formed on the first metal layer.

Abstract: Provided is an electromechanical switch and a method of manufacturing the same. The electromechanical switch includes an elastic conductive layer that moves by the application of an electric field, wherein the elastic conductive layer includes at least one layer of graphene.

Abstract: Provided are a field effect transistor, a logic circuit including the same and methods of manufacturing the same. The field effect transistor may include an ambipolar layer that includes a source region, a drain region, and a channel region between the source region and the drain region, wherein the source region, the drain region, and the channel region may be formed in a monolithic structure, a gate electrode on the channel region, and an insulating layer separating the gate electrode from the ambipolar layer, wherein the source region and the drain region have a width greater than that of the channel region in a second direction that crosses a first direction in which the source region and the drain region are connected to each other.

Abstract: Provided is a cross-point latch and a method of operating the cross-point latch. The cross-point latch includes a signal line, two control lines crossing the signal line, and unipolar switches disposed at crossing points between the signal line and the control lines.

Abstract: Example embodiments relate to a resistive random access memory (RRAM) and a method of manufacturing the RRAM. A RRAM according to example embodiments may include a lower electrode, which may be formed on a lower structure (e.g., substrate). A resistive layer may be formed on the lower electrode, wherein the resistive layer may include a transition metal dopant. An upper electrode may be formed on the resistive layer. Accordingly, the transition metal dopant may form a filament in the resistive layer that operates as a current path.

Abstract: A resistive random access memory (RRAM) having a solid solution layer and a method of manufacturing the RRAM are provided. The RRAM includes a lower electrode, a solid solution layer on the lower electrode, a resistive layer on the solid solution layer, and an upper electrode on the resistive layer. The method of manufacturing the RRAM includes forming a lower electrode, forming a solid solution layer on the lower electrode, forming a resistive layer on the solid layer and forming an upper electrode on the resistive layer, wherein the RRAM is formed of a transition metal solid solution.

Abstract: A method of fabricating a phase-change random-access memory (RAM) device includes forming a chalcogenide material on a substrate. A bottom contact is formed under the chalcogenide material, the bottom contact comprising TiAlN. Forming the bottom contact includes performing an atomic layer deposition (ALD) process, the ALD process including introducing an NH3 source gas into a chamber in which the ALD process is being carried out, a flow amount of the NH3 gas being such that the resulting bottom contact has a chlorine content of less than 1 at %. The bottom contact can include TiAlN having a crystallinity in terms of full-width half-maximum (FWHM) of less than about 0.65 degree.