Abstract: The present application proposes a method and system for quantitative derivation of an on-line evaluation layered model for evaluating concrete dam operation performance, and a storage medium, and relates to the technical field of dam operation safety monitoring and management. A logic architecture of quantitative derivation of the concrete dam operation performance mainly has two aspects, a longitudinal dimension and a transverse dimension. The longitudinal dimension is the principal line of assessing longitudinal evaluation of the on-line evaluation layered model, and an analysis idea of the concrete dam from local to global and from details to whole is objectively reflected from six levels of monitoring data, diagnosis methods, monitored items, evaluation indicators, key parts and an overall project.

Abstract: Systems, apparatuses, and methods are described for allocating content items for addressable content campaigns that target users with certain user characteristics and non-addressable content campaigns that request a certain quantity of deliveries in content delivery schedules. The insertions of addressable content items of the addressable content campaigns during slots in the content delivery schedules may be based on the predicted viewership (e.g., a number of views by targeted recipients) of the addressable content items during the slots. The deliveries of the content items from the addressable and non-addressable content campaigns may be scheduled to optimize values associated with viewings by targeted recipients of the assigned addressable content items and values associated with a quantity of deliveries of assigned non-addressable content items. The allocations of the contents items may also comply with various timing, geographical, delivery, slot inventory-related, and/or campaign specified constraints.

Abstract: An integrated pump station includes: a mounting frame, a pump body, and an electric drive device. The pump body is arranged on the mounting frame; the electric drive device comprises a housing body, a motor, a frequency converter and a controller; the housing body is arranged on the mounting frame; the motor, the frequency converter and the controller are arranged in the housing body, the motor being connected to the pump body; the motor is connected to the frequency converter by means of an electric wire, the frequency converter is connected to the controller by means of an electric wire, and a water cooling pipeline of the motor, a water cooling pipeline of the frequency converter and an oil cooler of the pump body sequentially communicate with one another.

Abstract: A sperm sorting device includes a foundation unit and a channel unit. The foundation unit includes a foundation wall, a surrounding wall extending from a periphery of the foundation wall, and a plurality of column portions. The channel unit has an inner bordering wall, a base plate surrounded by and connected to the inner bordering wall and having first and second surfaces, and a plurality of channel holes. The column portions of the foundation unit respectively extend through the channel holes. A distance between a summit surface of each of the column portions and the foundation wall is not smaller than a distance between the second surface and the foundation wall. Each of the channel holes has a selection space that is not occupied by the respective one of the column portions and that gradually reduces in size in a direction from the foundation wall to the base plate.

Abstract: An emulsion plunger pump and a pump head assembly (100) thereof. The pump head assembly (100) includes a pump head body (101), a liquid suction valve assembly (102), a liquid discharge valve assembly (103), a spacer sleeve assembly (104), and an end cover (105); the pump head body (101) has a hollow chamber (101a); the liquid suction valve assembly (102), the spacer sleeve assembly (104), and the liquid discharge valve assembly (103) are sequentially installed in the hollow chamber (101a); the liquid suction valve assembly (102) includes a liquid suction valve seat (1021), a liquid suction valve core (1022), and a first reset spring (1023); the liquid suction valve core (1022) is slidably connected to the spacer sleeve assembly (104); the first reset spring (1023) is located between the spacer sleeve assembly (104) and the liquid suction valve core (1022); and the end cover (105) is detachably connected to one end of the pump head body (101).

Abstract: A charging device, comprising a first power converter configured to provide a first output current, a second power converter configured to provide a second output current, a switch coupled to an output of the first power converter and an output of the second power converter, a first socket coupled to the output of the first power converter, a second socket coupled to the output of the second power converter, and a power delivery (PD) controller configured to control a turn ON of the switch in response to a coupling of the first socket to a first powered device and an absence of coupling of the second socket to a second powered device.

Abstract: A semiconductor structure includes a substrate, bit line structures located on the substrate, capacitor contact holes located on each of two opposite sides of the bit line structure, and isolation side walls, each of the isolation side walls is located between a respective bit line structure and the capacitor contact holes on one side of the bit line structure. A gap isolation layer is provided between the isolation side walls located on two opposite sides of the bit line structure. The gap isolation layer is located on the bit line structure, and a first gap is provided inside the gap isolation layer. A second gap is provided between the isolation side wall and the gap isolation layer.

Abstract: A pixel driving circuit is provided. The pixel driving circuit includes a light emission control circuit and a drive circuit. The light emission control circuit controls a potential of a control terminal of the drive circuit under the control of a coupled signal terminal, and the drive circuit drives a coupled light-emitting element to emit light based on the potential of the control terminal thereof. The drive circuit includes two drive transistors connected in parallel, and subthreshold swings of the two drive transistors are different.

Abstract: An automatic conveyor device including an entrance platform footboard, an exit platform footboard, and a series of steps running in a loop between the entrance platform footboard and the exit platform footboard; a first comb plate and a second comb plate respectively connected to the entrance platform footboard and the exit platform footboard through a comb support plate; and a first warning device disposed in the vicinity of the entrance platform footboard or the exit platform footboard, where the first warning device includes a projection device that projects a light beam along a width direction in the vicinity of the first comb plate or the second comb plate.

Abstract: A magnesium/titanium composite plate with large thickness ratios and a gradient heterothermal rolling bonding method are provided by the present disclosure, relating to the technical field of rolling bonding plates. The method includes following steps: assembling blanks according to a sequence of titanium strip, transition layer foil and magnesium alloy plate to obtain a composite blank; carrying out induction heating treatment on one side of the titanium strip of the composite blank, then rolling, and carrying out heat treatment on a composite plate blank after rolling to obtain the magnesium/titanium composite plate with large thickness ratios; and a thickness ratio of the magnesium alloy plate to the titanium strip is greater than or equal to 20:1.

Abstract: A magnesium/titanium composite plate with large thickness ratios and a gradient heterothermal rolling bonding method are provided by the present disclosure, relating to the technical field of rolling bonding plates. The method includes following steps: assembling blanks according to a sequence of titanium strip, transition layer foil and magnesium alloy plate to obtain a composite blank; carrying out induction heating treatment on one side of the titanium strip of the composite blank, then rolling, and carrying out heat treatment on a composite plate blank after rolling to obtain the magnesium/titanium composite plate with large thickness ratios; and a thickness ratio of the magnesium alloy plate to the titanium strip is greater than or equal to 20:1.

Abstract: The embodiment of the application provides a semiconductor structure and a method for forming a semiconductor structure. The method includes: a substrate structure is provided, in which the substrate structure at least including bit line structures and a plurality of landing pads, each of the plurality of landing pads is formed around a respective one of the bit line structures and covers a part of the respective one of the bit line structures, and a gap is formed between each two adjacent landing pads of the plurality of landing pads; and capacitive structures are formed on top surfaces of the plurality of landing pads and in the gaps.

Abstract: The present disclosure provides a display substrate and a method for manufacturing the same, and a display apparatus, belonging to the field of displaying technologies. The display substrate includes a base substrate, and a circuit layer, and has an island area, a hole area and a bridge area. The circuit layer includes a driving circuit located in the island area, a via hole located in the hole area, and at least one photoelectric sensor that is electrically connected to the driving circuit. The photoelectric sensor includes a first electrode layer, a photoelectric structure layer and a second electrode layer which are laminated. The photoelectric sensor is located in the island area or the bridge area.

Abstract: Disclosed is a method for manufacturing a contact hole, a semiconductor structure and electronic equipment. The method includes: forming a mask layer on an upper end face of a first oxide layer of the semiconductor structure, and exposing a pattern of a target contact hole on the mask layer; exposing a portion, corresponding to a target contact hole, of an upper end face of a contact layer and a portion, corresponding to the target contact hole, of an upper end face of an upper layer structure; depositing a second insulation layer on an etched surface, and depositing a second oxide layer on the second insulation layer; and removing portions, above the upper end face of the first oxide layer, of the second insulation layer and the second oxide layer, and removing a part of the contact layer, and exposing an upper end face of a zeroth layer contact.

Abstract: A semiconductor device with a buried bit line and a preparation method thereof are provided. The preparation method of a semiconductor device with a buried bit line includes: providing a substrate; forming bit line trenches; forming a bit line structure in the bit line trench; and forming word line structures in the substrate. The semiconductor device with a buried bit line includes a substrate, bit line trenches, a bit line structure, and word line structures.

Abstract: A pixel driving circuit is provided. The pixel driving circuit includes a light emission control circuit and a drive circuit. The light emission control circuit controls a potential of a control terminal of the drive circuit under the control of a coupled signal terminal, and the drive circuit drives a coupled light-emitting element to emit light based on the potential of the control terminal thereof. The drive circuit includes two drive transistors connected in parallel, and subthreshold swings of the two drive transistors are different.

Abstract: Disclosed are a heating culture device used to provide an environment with a vertical temperature difference and a method of using the heating culture device. The heating culture device is provided for accommodating and heating a cell separation device which carries living cells having flagella and capable of moving autonomously and has a film for passing through the living cells and partitioning the cell separating device into upper and lower chambers. The heating culture device includes a carrying assembly, a chip carrier box, a case assembly and a control assembly. When a cover of the heating culture device is covered during operation, the control assembly can control driving state of an upper electric heating plate at the cover according to the temperature of a heat spreader set on the cover; and control a fan at the bottom according to the temperature at the bottom of the chip carrier box.

Abstract: For each of a number of test commands of a test script for browser-based load testing of a web application hosted by a server device communicatively connected to the test device over a network, the test command is executed within a browser instance running on the test device and simulating usage of the web application by a user. In response to determining that the test command that has been executed is a browser operation command, that the test command executes for a minimum length of time is ensured in a throttling test mode in which the web application is tested via the browser instance.

Abstract: An embodiment of the disclosure provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a substrate, a bit line structure located on the substrate, a capacitor contact hole located on two opposite sides of the bit line structure, and an isolation sidewall. The isolation sidewall is located between the bit line structure and the capacitor contact hole. A gap is provided between the isolation sidewalls located on the two opposite sides of the bit line structure. The gap is located on the bit line structure.

Abstract: Provided is a drive backplane. The drive backplane includes: a base substrate and a circuit structure. The circuit structure includes a plurality of first thin film transistors and a plurality of second thin film transistors; wherein a first active layer of the first thin film transistor includes a first oxide layer and a second oxide layer, wherein the second oxide layer is disposed on a side of the first oxide layer away from the base substrate, a mobility of the second oxide layer is lower than a mobility of the first oxide layer, and a source and a drain of the first thin film transistor are connected to the second oxide layer; and a second active layer of the second thin film transistor includes a third oxide layer, wherein a mobility of the third oxide layer is lower than the mobility of the first oxide layer.