Abstract: A payment service system receives contextual information regarding an interaction between the payment service and a user device associated with a user. A propensity metric for the user is determined based at least in part on inputting the contextual information into a machine learning (ML) model. Based on the propensity metric, a user interface is dynamically configured to comprise user interface elements arranged in a layout personalized for the user, where a user interface element represents content particular to a service offered by the payment service. Based on receiving an interaction with the user interface element, a booklet is launched corresponding to the service with which the user interface element is associated.

Abstract: A method for atomic layer etching a metal containing layer is provided. At least a region of a surface of the metal containing layer is modified to form a modified metal containing region by exposing a surface of the metal containing layer to a modification gas, wherein adjacent to the modified metal containing region remains an unmodified metal containing region. The modified metal containing region is selectively removed with respect to the unmodified metal containing region by exposing the surface of the metal containing layer to an inert bombardment plasma generated from an inert gas.

Abstract: A method is provided. A substrate situated in a chamber is exposed to a halogen-containing gas comprising an element selected from the group consisting of silicon, germanium, carbon, titanium, and tin, and igniting a plasma to modify a surface of the substrate and form a modified surface. The substrate is exposed to an activated activation gas to etch at least part of the modified surface.

Abstract: A method of cleaning residue containing ruthenium (Ru) residue on at least one surface of a component of a semiconductor processing chamber is provided. The residue is exposed to a Ru cleaning composition comprising at least one of hypochlorite and 03 based chemistries, wherein the Ru cleaning composition removes the Ru residue.

Abstract: A method for atomic layer etching a metal containing layer is provided. At least a region of a surface of the metal containing layer is modified to form a modified metal containing region by exposing a surface of the metal containing layer to a modification gas, wherein adjacent to the modified metal containing region remains an unmodified metal containing region. The modified metal containing region is selectively removed with respect to the unmodified metal containing region by exposing the surface of the metal containing layer to an inert bombardment plasma generated from an inert gas.

Abstract: A method for atomic layer etching a metal containing layer is provided. At least a region of a surface of the metal containing layer is modified to form a modified metal containing region by exposing a surface of the metal containing layer to a modification gas, wherein adjacent to the modified metal containing region remains an unmodified metal containing region. The modified metal containing region is selectively removed with respect to the unmodified metal containing region by exposing the surface of the metal containing layer to an inert bombardment plasma generated from an inert gas.

Abstract: A method for etching a metal containing material is provided. The metal containing material is exposed to a halogen containing fluid or plasma to convert at least some of the metal containing material into a metal halide material. The metal halide material is exposed to a ligand containing fluid or plasma, wherein at least some of the metal halide material is formed into a metal halide ligand complex. At least some of the metal halide ligand complex is vaporized.

Abstract: A method for atomic layer etching copper or copper alloy over a substrate in a plasma processing chamber comprising a plurality of cycles is provided. Each cycle of the plurality of cycles comprises a copper modification phase and an activation phase. The copper modification phase comprises flowing a modification gas into the plasma processing chamber, transforming the modification gas into a modification plasma, and exposing the copper or copper alloy to the modification plasma, wherein at least a part of the copper or copper alloy is modified. The activation phase comprises flowing an activation gas into the plasma processing chamber, wherein the activation gas, comprises a hydrogen containing gas, transforming the activation gas into an activation plasma, and exposing the modified copper or copper alloy to the activation plasma, wherein at least a volatile copper or copper alloy complex is formed.

Abstract: A method for cleaning a plasma processing chamber comprising one or more cycles is provided. Each cycle comprises performing an oxygen containing plasma cleaning phase, performing a volatile chemistry type residue cleaning phase, and performing a fluorine containing plasma cleaning phase.

Abstract: An LED illumination device corresponds to a compact fluorescent lamp and has improved thermal properties. The illumination device includes a transparent tube having an inner wall defining a cavity, a light engine having one or more light emitting diodes, and a driver to drive the light engine. The light engine is disposed at the inner wall of the transparent tube. The arrangement of the light engine and the one or more light emitting diodes at the inner wall of the tube provides improved lighting characteristics. Simultaneously, an improved cooling is provided by the interface surface for conducting heat between the inner wall and the light engine.

Abstract: A method is provided. A substrate situated in a chamber is exposed to a halogen-containing gas comprising an element selected from the group consisting of silicon, germanium, carbon, titanium, and tin, and igniting a plasma to modify a surface of the substrate and form a modified surface.

Abstract: A method for atomic layer etching a metal containing layer is provided. At least a region of a surface of the metal containing layer is modified to form a modified metal containing region by exposing a surface of the metal containing layer to a modification gas, wherein adjacent to the modified metal containing region remains an unmodified metal containing region. The modified metal containing region is selectively removed with respect to the unmodified metal containing region by exposing the surface of the metal containing layer to an inert bombardment plasma generated from an inert gas.

Abstract: The present disclosure provides a system and method for predicting wafer fabrication defects resulting from plasma processing of wafers in a plasma processing chamber. The system and method include processing electromagnetic signals emitted from residual compounds peeled from the chamber walls during the plasma processing of the wafers to indirectly determine the likelihood that the wafers are incurring fabrication processing defects during the plasma processing.

Abstract: The present invention provides compositions comprising Verteporfin and other anticancer compounds linked to a hydrophilic peptide through a degradable linker molecule to allow the anticancer compounds to penetrate tissues via in situ administration. The compounds of the present invention are useful for sensitizing tumor cells to radiotherapy, preventing recurrence of tumors after surgical resection and for treating remaining unremoved cancer cells at the site of the tumor.

Abstract: The invention discloses a method for simulating the discontinuity of the hydraulic fracture wall in fractured reservoirs, comprising the following steps: establish a physical model of the natural fracture; establish a hydraulic fracture propagation calculation equation; establish a natural fracture failure model, calculate the natural fracture aperture, and then calculate the natural fracture permeability, and finally convert the natural fracture permeability into the permeability of the porous medium; couple the hydraulic fracture propagation calculation equation with the permeability of the porous medium through the fracture propagation criterion and the fluid loss to obtain a pore elastic model of the coupled natural fracture considering the influence of the natural fracture; work out the stress and displacement distribution of the hydraulic fracture wall with the pore elastic model of the coupled natural fracture, and analyze the offset and discontinuity of the hydraulic fracture wall according to the dis

Abstract: The present invention provides compositions comprising Verteporfin and other anticancer compounds linked to a hydrophilic peptide through a degradable linker molecule to allow the anticancer compounds to penetrate tissues via in situ administration. The compounds of the present invention are useful for sensitizing tumor cells to radiotherapy, preventing recurrence of tumors after surgical resection and for treating remaining unremoved cancer cells at the site of the tumor.

Abstract: The invention described herein provides novel ampiphilic compounds that self-assemble into a hydrogel composition useful for treating wounds, including chronic wounds and diabetic wounds. The compounds of the invention have structural characteristics, such as hydrophilic and hydrophobic moieties, that enable self-assembly into discrete nanostructures, which then entangle to form the hydrogel. Also provided are methods for treating wounds.

Abstract: The invention discloses a method for simulating the discontinuity of the hydraulic fracture wall in fractured reservoirs, comprising the following steps: establish a physical model of the natural fracture; establish a hydraulic fracture propagation calculation equation; establish a natural fracture failure model, calculate the natural fracture aperture, and then calculate the natural fracture permeability, and finally convert the natural fracture permeability into the permeability of the porous medium; couple the hydraulic fracture propagation calculation equation with the permeability of the porous medium through the fracture propagation criterion and the fluid loss to obtain a pore elastic model of the coupled natural fracture considering the influence of the natural fracture; work out the stress and displacement distribution of the hydraulic fracture wall with the pore elastic model of the coupled natural fracture, and analyze the offset and discontinuity of the hydraulic fracture wall according to the dis

Abstract: Dynamic segmentation model to divide bottom hole net pressure curve into different stages based on slope of curve includes: step S1, establish calculation model of bottom hole net pressure: according to wellhead pressure during hydraulic fracturing in shale gas reservoir, calculate bottom hole net pressure based on fluid dynamics theory; step S2, establishing dynamic segmentation model to divide bottom hole net pressure curve into different stages based on slope of curve by numerical analysis theory; step S3, establish recognition model to recognize extension behavior of underground fracture network based on rock mechanics and fracture mechanics; and step S4, combine step S1, S2, and S3 to realize automatic diagnosis for wellhead pressure curve of hydraulic fracturing in shale gas horizontal well. A diagnosis and analysis method of the wellhead pressure curve of hydraulic fracturing in shale gas horizontal well is described.

Abstract: Various embodiments may relate to an illuminating device including a light engine, a housing and a driver contained in the housing, wherein the illuminating device further includes a heat dissipation device disposed in the housing which includes a substrate for supporting the light engine and an insert ring in thermal-conductive contact with the substrate.