Abstract: A semiconductor resist composition includes-an organometallic compound represented by Chemical Formula 1 and a solvent: wherein, in Chemical Formula 1, R1 is an aliphatic hydrocarbon group, an aromatic hydrocarbon group, or an -alkyl-O-alkyl group, and R2 to R4 are each independently selected from —ORa and —OC(?O)Rb. The semiconductor resist composition may have excellent solubility and storage stability.

Abstract: A semiconductor resist composition includes an organometallic compound represented by Chemical Formula 1 and a solvent: wherein, in Chemical Formula 1, R1 is an aliphatic hydrocarbon group, an aromatic hydrocarbon group, or an -alkyl-O-alkyl group, and R2 to R4 are each independently selected from —ORa and —OC(?O)Rb. The semiconductor resist composition may have excellent solubility and storage stability.

Abstract: Disclosed are a compound for an organic optoelectronic device represented by Chemical Formula 1, a composition for an organic optoelectronic device including the same, an organic optoelectronic device and a display device. Details of Chemical Formula 1 are as described in the specification.

Abstract: A resist underlayer composition including a polymer including a main chain, a side chain, or a main chain and a side chain including a heterocycle including two or more nitrogen atoms in the ring of the heterocycle, a compound including a moiety represented by Chemical Formula 1, and a solvent is provided.

Abstract: A semiconductor photoresist composition includes an organometallic compound represented by Chemical Formula 1, an organometallic compound represented by Chemical Formula 2, and a solvent, and a method of forming patterns using the same. When the semiconductor photoresist composition is irradiated with e.g., extreme ultraviolet light, radical crosslinking between Sn-containing units may occur via Sn—O—Sn bond formation, and a photoresist polymer providing excellent sensitivity, small or reduced line edge roughness, and/or excellent resolution may be formed.

Abstract: A method for forming photoresist patterns and a semiconductor device on which a photoresist pattern manufactured according to the method is formed are disclosed. The method includes forming a preliminary photoresist pattern on a substrate; coating an organic topcoat composition including an acrylic polymer, the acrylic polymer including a structural unit containing a hydroxy group and a fluorine, and an acid compound on the preliminary photoresist pattern; drying and heating the substrate on which the organic topcoat composition is coated to coat it with a topcoat; and spraying a rinse solution including an acetate-based compound on the substrate coated with the topcoat to remove the topcoat.

Abstract: A resist topcoat composition includes an acrylic polymer including a structural unit containing a hydroxy group and a fluorine; a mixture including a sulfonic acid compound containing at least one fluorine and a carboxylic acid compound containing at least one fluorine in a weight ratio of about 1:0.1 to about 1:50; and a solvent. A method of forming patterns uses the resist topcoat composition to form a topcoat over a patterned substrate.

Abstract: A resist topcoat composition and a method of forming patterns using the resist topcoat composition.

Abstract: A resist topcoat composition and a method of forming patterns using the resist topcoat composition are provided. The resist topcoat resist topcoat composition includes an acrylic polymer including a structural unit containing a hydroxy group and a fluorine; at least one acid compound selected from a sulfonic acid compound containing at least one fluorine, a sulfonimide compound containing at least one fluorine, and a carboxylic acid compound containing at least one fluorine; and a solvent.

Abstract: A method of forming a photoresist pattern and a semiconductor device on which a photoresist pattern manufactured according to the same is formed. The method includes forming a photoresist pattern on a substrate; coating an organic topcoat composition including an acrylic polymer including a structural unit containing a hydroxy group and a fluorine and an acidic compound on the photoresist pattern; drying and heating the substrate on which the organic topcoat composition is coated to coat it with a topcoat; and spraying a rinse solution including an ether-based compound on the substrate coated with the topcoat to remove the topcoat.

Abstract: A resist topcoat composition and a method of forming patterns utilizing the resist topcoat composition are disclosed. The resist topcoat composition includes an acrylic polymer comprising a structural unit comprising a hydroxy group and a fluorine; a mixture comprising a first acid compound comprising at least one fluorine; and a second acid compound different from the first acid compound and comprising at least one fluorine, the first acid compound and the second acid compound are each independently selected from a sulfonic acid compound and a sulfonimide compound, the first acid compound and the second acid compound being in a weight ratio of about 1:0.1 to about 1:50; and a solvent.

Abstract: Disclosed are a semiconductor photoresist composition including an organometallic compound including at least one selected from compounds represented by Chemical Formulae 1 to 3 and a solvent, and a method of forming patterns using the semiconductor photoresist composition on an etching-objective layer to form a photoresist layer, patterning the photoresist layer to form a photoresist pattern, and etching the etching-objective layer using the photoresist pattern as an etching mask.

Abstract: A semiconductor photoresist composition includes an organometallic compound represented by Chemical Formula 1, an organic acid having a vapor pressure of less than or equal to about 1.0 mmHg at 25° C., and a pKa of about 3 to about 5, and a solvent. A method of forming photoresist patterns utilizes the composition.

Abstract: This disclosure relates to a semiconductor resist composition including an organometallic compound represented by Chemical Formula 1 and a solvent, and to a method of forming patterns using the composition: Chemical Formula 1 wherein, in Chemical Formula 1, R1 is an aliphatic hydrocarbon group, an aromatic hydrocarbon group, or an -alkyl-O-alkyl group, and R2 to R4 are each independently selected from —ORa and —OC(?O)Rb.

Abstract: This disclosure relates to a semiconductor resist composition including an organometallic compound represented by Chemical Formula 1 and a solvent, and to a method of forming patterns using the composition: Chemical Formula 1 wherein, in Chemical Formula 1, R1 is an aliphatic hydrocarbon group, an aromatic hydrocarbon group, or an -alkylene-O-alkyl group, and R2 to R4 are each independently selected from —ORa and —OC(?O)Rb.

Abstract: A semiconductor photoresist composition includes an organometallic compound represented by Chemical Formula 1, a photoacid generator (PAG), and a solvent: In Chemical Formula 1, R is a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 aliphatic unsaturated organic group including at least one double bond or triple bond, a substituted or unsubstituted C6 to C30 aryl group, an ethoxy group, a propoxy group, or a combination thereof; and X, Y, and Z are each independently —OR1 or —OC(?O)R2.

Abstract: A semiconductor resist composition includes-an organometallic compound represented by Chemical Formula 1 and a solvent: wherein, in Chemical Formula 1, R1 is an aliphatic hydrocarbon group, an aromatic hydrocarbon group, or an -alkyl-O-alkyl group, and R2 to R4 are each independently selected from —ORa and —OC(?O)Rb. The semiconductor resist composition may have excellent solubility and storage stability.

Abstract: A semiconductor resist composition includes an organometallic compound represented by Chemical Formula 1 and a solvent: wherein, in Chemical Formula I, R1 is an aliphatic hydrocarbon group, an aromatic hydrocarbon group, or an —alkylene-O-alkyl group, and R2 to R4 are each independently selected from —ORa and —OC(?O)Rb, where Ra is not hydrogen.

Abstract: A semiconductor resist composition includes an organometallic compound represented by Formula I and a solvent: wherein L includes at least one alkylene group in the main chain. A pattern may be formed using the composition. The pattern formed by using the semiconductor resist composition may not collapse while having a high aspect ratio.

Abstract: Disclosed are a semiconductor photoresist composition including an organometallic compound including at least one selected from compounds represented by Chemical Formulae 1 to 3 and a solvent, and a method of forming patterns using the semiconductor photoresist composition on an etching-objective layer to form a photoresist layer, patterning the photoresist layer to form a photoresist pattern, and etching the etching-objective layer using the photoresist pattern as an etching mask.