Patents by Inventor Ranaan Zehavi
Ranaan Zehavi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7789331Abstract: A method of jet milling silicon powder in which silicon pellets are fed into a jet mill producing a gas vortex in which the pellets are entrained and pulverized by collisions with each other or walls of the milling chamber. The chamber walls are advantageously formed of high-purity silicon as are other parts contacting the unground pellets or ground powder. The pellets and chamber parts may be formed of electronic grade silicon but polycrystalline silicon may be used for chamber parts. Additionally, the particle feed tube in which the particles are entrained in a gas flow and the vortex finder operating as the outlet at the center of the vortex may be formed of silicon. The milling and feed gas may be nitrogen supplied from a liquid-nitrogen tank lined with stainless steel. The feed pellets may be formed by chemical vapor deposition.Type: GrantFiled: July 24, 2007Date of Patent: September 7, 2010Assignee: Integrated Photovoltaics, Inc.Inventors: Ranaan Zehavi, James E. Boyle
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Patent number: 7736436Abstract: An edge ring for use in batch thermal processing of wafers supported on a vertical tower within a furnace. The edge rings are have a width approximately overlapping the periphery of the wafers and are detachably supported on the towers equally spaced between the wafer to reduce thermal edge effects. The edge rings have may have internal or external recesses to interlock with structures on or adjacent the fingers of the tower legs supporting the wafers or one or more steps formed on the lateral sides of the edge ring may slide over and then fall below a locking ledge associated with the support fingers. Preferably, the tower and edge ring and other parts of the furnace adjacent the hot zone are composed of silicon.Type: GrantFiled: January 11, 2006Date of Patent: June 15, 2010Assignee: Integrated Materials, IncorporatedInventors: Tom L. Cadwell, Ranaan Zehavi, Michael Sklyar
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Patent number: 7713355Abstract: A silicon shelf tower for hatch thermal processing of silicon wafers in a vertical furnace. The tower includes at least three silicon legs joined to bases and having a vertical arrangement of slots. Silicon shelves are detachably loaded by sliding them through the slots in the side legs and into the slot of the back leg. A interlocking mechanism detachably locks the shelves to the back leg while the slots in the two side legs laterally constrains the shelves. The shelves include cutouts to allow a robot paddle to load and unload wafers to the shelves. Circular holes in the shelves relieve stress and prevent wafer sticking Preferably, the shelves are formed from randomly oriented polycrystalline silicon. The shelves and towers can alternatively be made of other materials such as quartz and silicon carbide.Type: GrantFiled: February 27, 2006Date of Patent: May 11, 2010Assignee: Integrated Materials, IncorporatedInventors: Ranaan Zehavi, Reese Reynolds
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Publication number: 20080054106Abstract: A method of jet milling silicon powder in which silicon pellets are fed into a jet mill producing a gas vortex in which the pellets are entrained and pulverized by collisions with each other or walls of the milling chamber. The chamber walls are advantageously formed of high-purity silicon as are other parts contacting the unground pellets or ground powder. The pellets and chamber parts may be formed of electronic grade silicon but polycrystalline silicon may be used for chamber parts. Additionally, the particle feed tube in which the particles are entrained in a gas flow and the vortex finder operating as the outlet at the center of the vortex may be formed of silicon. The milling and feed gas may be nitrogen supplied from a liquid-nitrogen tank lined with stainless steel. The feed pellets may be formed by chemical vapor deposition.Type: ApplicationFiled: July 24, 2007Publication date: March 6, 2008Applicant: INTEGRATED MATERIALS, INC.Inventors: Ranaan ZEHAVI, James E. BOYLE
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Publication number: 20070020885Abstract: Tubular silicon members advantageously formed by extrusion from a silicon melt or by fixing together silicon staves in a barrel shape. A silicon-based wafer support tower is particularly useful for batch-mode thermal chemical vapor deposition and other high-temperature processes, especially reflow of silicate glass at above 1200° C. The surfaces of the silicon tower are bead blasted to introduce sub-surface damage, which produces pits and cracks in the surface, which anchor subsequently deposited layer of, for example, silicon nitride, thereby inhibiting peeling of the nitride film. Wafer support portions of the tower are preferably composed of virgin polysilicon. The invention can be applied to other silicon parts in a deposition or other substrate processing reactor, such as tubular sleeves and reactor walls. The tower parts are preferably pre-coated with silicon nitride or polysilicon prior to chemical vapor deposition of these materials, or with silicon nitride prior to reflow of silica.Type: ApplicationFiled: September 18, 2006Publication date: January 25, 2007Applicant: INTEGRATED MATERIALS, INC.Inventors: Ranaan ZEHAVI, James BOYLE
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Publication number: 20070006799Abstract: A silicon-based wafer support tower particularly useful for batch-mode thermal chemical vapor deposition. The surfaces of the silicon tower are bead blasted to introduce sub-surface damage, which produces pits and cracks in the surface, which anchor subsequently deposited layer of, for example, silicon nitride, thereby inhibiting peeling of the nitride film. The surface roughness may be in the range of 0.25 to 2.5 ?m. Wafer support portions of the tower are preferably composed of virgin polysilicon. The invention can be applied to other silicon parts in a deposition or other substrate processing reactor, such as tubular sleeves and reactor walls. Tubular silicon members are advantageously formed by extrusion from a silicon melt.Type: ApplicationFiled: September 14, 2006Publication date: January 11, 2007Inventors: Ranaan Zehavi, James Boyle
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Publication number: 20070006803Abstract: An edge ring for use in batch thermal processing of wafers supported on a vertical tower within a furnace. The edge rings are have a width approximately overlapping the periphery of the wafers and are detachably supported on the towers equally spaced between the wafer to reduce thermal edge effects. The edge rings have may have internal or external recesses to interlock with structures on or adjacent the fingers of the tower legs supporting the wafers or one or more steps formed on the lateral sides of the edge ring may slide over and then fall below a locking ledge associated with the support fingers. Preferably, the tower and edge ring and other parts of the furnace adjacent the hot zone are composed of silicon.Type: ApplicationFiled: January 11, 2006Publication date: January 11, 2007Inventors: Tom Cadwell, Ranaan Zehavi, Michael Sklyar
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Publication number: 20060249080Abstract: A silicon shelf tower for batch thermal processing of silicon wafers in a vertical furnace. The tower includes at least three silicon legs joined to bases and having a vertical arrangement of slots. Silicon shelves are detachably loaded by sliding therm through the slots in the side legs and into the slot of the back leg. A interlocking mechanism detachably locks the shelves to the back leg while the slots in the two side legs laterally constrains the shelves. The shelves include cutouts to allow a robot paddle to load and unload wafers to the shelves. Circular holes in the shelves relieve stress and prevent wafer sticking Preferably, the shelves are formed from randomly oriented polycrystalline silicon. The shelves and towers can alternatively be made of other materials such as quartz and silicon carbide.Type: ApplicationFiled: February 27, 2006Publication date: November 9, 2006Inventors: Ranaan Zehavi, Reese Reynolds
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Publication number: 20060211218Abstract: Baffle wafers of polycrystalline silicon are placed in non-production slots of a support tower for thermal processing monocrystalline silicon wafers. The polycrystalline silicon is preferably randomly oriented Czochralski polysilicon grown using a randomly oriented seed, for example, CVD grown silicon. An all-silicon hot zone of a thermal furnace may include a silicon support tower placed within a silicon liner and supporting the polysilicon baffle wafers with silicon injector tube providing processing gas within the liner. The randomly oriented polysilicon may be used for other parts requiring a rugged member, for example, within a silicon processing chamber and for structural members.Type: ApplicationFiled: January 9, 2006Publication date: September 21, 2006Inventors: James Boyle, Reese Reynolds, Ranaan Zehavi, Robert Mytton, Tom Cadwell