Patents by Inventor Ranadeep BHOWMICK
Ranadeep BHOWMICK has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11935726Abstract: A radio frequency (RF) generator system includes first and second RF power sources, each RF power source applying a respective RF signal and second RF signal to a load. The first RF signal is applied in accordance with the application of the second RF signal. The application of the first RF signal is synchronized to application of the second RF signal. The first RF signal may be amplitude modulated in synchronization with the second RF signal, and the amplitude modulation can include blanking of the first RF signal. A frequency offset may be applied to the first RF signal in synchronization with the second RF signal. A variable actuator associated with the first RF power source may be controlled in accordance with the second RF signal.Type: GrantFiled: September 21, 2021Date of Patent: March 19, 2024Assignee: MKS Instruments, Inc.Inventors: Aaron T. Radomski, Benjamin J. Gitlin, Larry J. Fisk, II, Mariusz Oldziej, Aaron M. Burry, Jonathan W. Smyka, Alexei Marakhtanov, Bing Ji, Felix Leib Kozakevich, John Holland, Ranadeep Bhowmick
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Patent number: 11908660Abstract: A method for optimizing delivery of power to a plasma chamber is described. The method includes dividing each cycle of a low frequency (LF) radio frequency generator (RFG) into multiple time intervals. During each of the time intervals, a frequency offset of a high frequency (HF) RFG is generated for which the delivery of power is maximized. The frequency offsets provide a substantially inverse relationship compared to a voltage signal of the LF RFG for each cycle of the voltage signal. The frequency offsets for the time intervals are multiples of the low frequency. The substantially inverse relationship facilitates an increase in the delivery of power to the electrode. A total range of the frequency offsets from a reference HF frequency over the LF RF cycle depends on a power ratio of power that is supplied by the LF RFG and power that is supplied by the HF RFG.Type: GrantFiled: March 9, 2022Date of Patent: February 20, 2024Assignee: Lam Research CorporationInventors: Ranadeep Bhowmick, John Holland, Felix Leib Kozakevich, Bing Ji, Alexei Marakhtanov
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Publication number: 20230317414Abstract: First, second, third, and fourth radiofrequency (RF) signal generators generate first, second, third, and fourth RF signals, respectively, having first, second, third, and fourth frequencies, respectively. The second and third frequencies are different specified harmonics of the first frequency. The fourth frequency is at least two orders of magnitude larger than the first frequency. An impedance matching system controls impedances for the first, second, third, and fourth RF signal generators. A control module is programmed to control: A) a first phase difference between the first and second RF signals, B) a second phase difference between the first and third RF signals, C) a first voltage difference between the first and second RF signals, D) a second voltage difference between the first and third RF signals. The first and second phase differences and the first and second voltage differences collectively control a plasma sheath voltage as a function of time.Type: ApplicationFiled: June 23, 2021Publication date: October 5, 2023Inventors: Alexei Marakhtanov, Felix Leib Kozakevich, Ranadeep Bhowmick, John Holland
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Publication number: 20230298857Abstract: A first radiofrequency signal generator is set to generate a low frequency signal. A second radiofrequency signal generator is set to generate a high frequency signal. An impedance matching system has a first input connected to an output of the first radiofrequency signal generator and a second input connected to an output of the second radiofrequency signal generator. The impedance matching system controls impedances at the outputs of the first and second radiofrequency signal generators. An output of the impedance matching system is connected to a radiofrequency supply input of a plasma processing system. A control module monitors reflected voltage at the output of the second radiofrequency signal generator. The control module determines when the reflected voltage indicates a change in impedance along a transmission path of the high frequency signal that is indicative of a particular process condition and/or event within the plasma processing system.Type: ApplicationFiled: June 28, 2021Publication date: September 21, 2023Inventors: Ranadeep Bhowmick, Alexei Marakhtanov, Felix Leib Kozakevich, John Holland
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Publication number: 20230274914Abstract: A system having the low frequency RF generator is described. The low frequency RF has an operating frequency range between 10 kilohertz (kHz) and 330 kHz. The low frequency RF generator generates an RF signal. The system further includes an impedance matching circuit coupled to the low frequency RF generator for receiving the RF signal. The impedance matching circuit modifies an impedance of the RF signal to output a modified RF signal. The system includes a plasma chamber coupled to the RF generator for receiving the modified RF signal. The plasma chamber includes a chuck having a dielectric layer and a base metal layer. The dielectric layer is located on top of the base metal layer. The dielectric layer has a bottom surface, and the base metal layer has a top surface. The base metal layer has a porous plug and the bottom surface of the dielectric layer has a portion that is in contact with the porous plug.Type: ApplicationFiled: November 5, 2021Publication date: August 31, 2023Inventors: Alexei M. Marakhtanov, Felix Leib Kozakevich, Bing Ji, Ranadeep Bhowmick, John Patrick Holland, Alexander Matyushkin
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Publication number: 20230245874Abstract: Systems and methods for controlling a plasma sheath characteristic are described. One of the methods includes determining a first value of the plasma sheath characteristic of a plasma sheath formed within a plasma chamber. The method further includes determining whether the first value of the plasma sheath characteristic is within a predetermined range from a preset value of the plasma sheath characteristic. The method also includes modifying a variable of a radio frequency (RF) generator coupled to the plasma chamber via an impedance matching circuit upon determining that the first value is not within the predetermined range from the preset value. The operation of modifying the variable of the RF generator is performed until it is determined that the first value of the plasma sheath characteristic is within the predetermined range from the preset value.Type: ApplicationFiled: March 15, 2022Publication date: August 3, 2023Inventors: Alexei M. Marakhtanov, James Eugene Caron, John Patrick Holland, Felix Leib Kozakevich, Ranadeep Bhowmick, Bing Ji
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Publication number: 20230230804Abstract: A method for applying RF power in a plasma process chamber is provided, including: generating a first RF signal; generating a second RF signal; generating a third RF signal; wherein the first, second, and third RF signals are generated at different frequencies; combining the first, second and third RF signals to generate a combined RF signal, wherein a wave shape of the combined RF signal is configured to approximate a sloped square wave shape; applying the combined RF signal to a chuck in the plasma process chamber.Type: ApplicationFiled: July 6, 2021Publication date: July 20, 2023Inventors: Ranadeep Bhowmick, Felix Kozakevich, Alexei Marakhtanov, John Holland, Eric Hudson
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Publication number: 20230215694Abstract: A method for achieving a first uniformity level in a processing rate across a surface of a substrate is described. The method includes receiving the first uniformity level to be achieved across the surface of the substrate and identifying a first plurality of duty cycles associated with a first plurality of states based on the first uniformity level. The first plurality of states are of a variable of a first radio frequency (RF) signal. The method further includes controlling an RF generator to generate the first RF signal having the first plurality of duty cycles.Type: ApplicationFiled: December 23, 2021Publication date: July 6, 2023Inventors: Alexei M. Marakhtanov, Felix Leib Kozakevich, Bing Ji, John P. Holland, Ranadeep Bhowmick
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Publication number: 20230081542Abstract: An impedance match is described. The impedance match includes a housing having a bottom portion and a top portion. The bottom portion has match components and the top portion has an elongated body. A low frequency input is connected through the bottom portion of the housing, and the low frequency input is interconnected to a first set of capacitors and inductors. A high frequency input is connected through the bottom portion of the housing, and the high frequency input is interconnected to a second set of capacitors and inductors. An elongated strap extends between the bottom portion and the top portion of the housing. A lower portion of the elongated strap is coupled to the second set of capacitors and inductors and an upper portion of the elongated strap is connected to an RF rod at an end of the elongated body.Type: ApplicationFiled: January 12, 2021Publication date: March 16, 2023Inventors: Felix Leib Kozakevich, Alexei Marakhtanov, Bing Ji, Ranadeep Bhowmick, John Holland
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Publication number: 20230059495Abstract: A fixed outer support flange (flange 1) is formed to circumscribe an electrode within a plasma processing system. Flange 1 has a vertical portion and a horizontal portion extending radially outward from a lower end of the vertical portion. An articulating outer support flange (flange 2) is formed to circumscribe flange 1. Flange 2 has a vertical portion and a horizontal portion extending radially outward from a lower end of the vertical portion. The vertical portion of flange 2 is positioned concentrically outside of the vertical portion of flange 1. Flange 2 is spaced apart from flange 1 and moveable along the vertical portion of flange 1. Each of a plurality of electrically conductive straps has a first end portion connected to flange 2 and a second end portion connected to flange 1.Type: ApplicationFiled: January 30, 2021Publication date: February 23, 2023Inventors: Alexei Marakhtanov, Felix Kozakevich, Bing Ji, Ranadeep Bhowmick, Kenneth Lucchesi, John Holland
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Publication number: 20230054699Abstract: A tunable edge sheath (TES) system includes a coupling ring configured to couple to a bottom surface of an edge ring that surrounds a wafer support area within a plasma processing chamber. The TES system includes an annular-shaped electrode embedded within the coupling ring. The TES system includes a plurality of radiofrequency signal supply pins coupled to the electrode within the coupling ring. Each of the plurality of radiofrequency signal supply pins extends through a corresponding hole formed through a bottom surface of the coupling ring. The TES system includes a plurality of radiofrequency signal filters respectively connected to the plurality of radiofrequency supply pins. Each of the plurality of radiofrequency signal filters is configured to provide a high impedance to radiofrequency signals used to generate a plasma within the plasma processing chamber.Type: ApplicationFiled: January 30, 2021Publication date: February 23, 2023Inventors: Alexei Marakhtanov, Felix Kozakevich, Bing Ji, Ranadeep Bhowmick, John Holland
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Publication number: 20230007885Abstract: A method for achieving uniformity in an etch rate is described. The method includes receiving a voltage signal from an output of a match, and determining a positive crossing and a negative crossing of the voltage signal for each cycle of the voltage signal. The negative crossing of each cycle is consecutive to the positive crossing of the cycle. The method further includes dividing a time interval of each cycle of the voltage signal into a plurality of bins. For one or more of the plurality of bins associated with the positive crossing and one or more of the plurality of bins associated with the negative crossing, the method includes adjusting a frequency of a radio frequency generator to achieve the uniformity in the etch rate.Type: ApplicationFiled: February 8, 2021Publication date: January 12, 2023Inventors: Alexei Marakhtanov, Felix Leib Kozakevich, Ranadeep Bhowmick, Bing Ji, John Holland
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Publication number: 20220199366Abstract: A method for optimizing delivery of power to a plasma chamber is described. The method includes dividing each cycle of a low frequency (LF) radio frequency generator (RFG) into multiple time intervals. During each of the time intervals, a frequency offset of a high frequency (HF) RFG is generated for which the delivery of power is maximized. The frequency offsets provide a substantially inverse relationship compared to a voltage signal of the LF RFG for each cycle of the voltage signal. The frequency offsets for the time intervals are multiples of the low frequency. The substantially inverse relationship facilitates an increase in the delivery of power to the electrode. A total range of the frequency offsets from a reference HF frequency over the LF RF cycle depends on a power ratio of power that is supplied by the LF RFG and power that is supplied by the HF RFG.Type: ApplicationFiled: March 9, 2022Publication date: June 23, 2022Inventors: Ranadeep Bhowmick, John Holland, Felix Leib Kozakevich, Bing Ji, Alexei Marakhtanov
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Patent number: 11335539Abstract: A method for optimizing delivery of power to a plasma chamber is described. The method includes dividing each cycle of a low frequency (LF) radio frequency generator (RFG) into multiple time intervals. During each of the time intervals, a frequency offset of a high frequency (HF) RFG is generated for which the delivery of power is maximized. The frequency offsets provide a substantially inverse relationship compared to a voltage signal of the LF RFG for each cycle of the voltage signal. The frequency offsets for the time intervals are multiples of the low frequency. The substantially inverse relationship facilitates an increase in the delivery of power to the electrode. A total range of the frequency offsets from a reference HF frequency over the LF RF cycle depends on a power ratio of power that is supplied by the LF RFG and power that is supplied by the HF RFG.Type: GrantFiled: September 28, 2018Date of Patent: May 17, 2022Assignee: Lam Research CorporationInventors: Ranadeep Bhowmick, John Holland, Felix Leib Kozakevich, Bing Ji, Alexei Marakhtanov
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Publication number: 20220005674Abstract: A radio frequency (RF) generator system includes first and second RF power sources, each RF power source applying a respective RF signal and second RF signal to a load. The first RF signal is applied in accordance with the application of the second RF signal. The application of the first RF signal is synchronized to application of the second RF signal. The first RF signal may be amplitude modulated in synchronization with the second RF signal, and the amplitude modulation can include blanking of the first RF signal. A frequency offset may be applied to the first RF signal in synchronization with the second RF signal. A variable actuator associated with the first RF power source may be controlled in accordance with the second RF signal.Type: ApplicationFiled: September 21, 2021Publication date: January 6, 2022Inventors: Aaron T. RADOMSKI, Benjamin J. GITLIN, Larry J. FISK, II, Mariusz OLDZIEJ, Aaron M. BURRY, Jonathan W. SMYKA, Alexei MARAKHTANOV, Bing JI, Felix Leib KOZAKEVICH, John HOLLAND, Ranadeep BHOWMICK
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Patent number: 11158488Abstract: A radio frequency (RF) generator system includes first and second RF power sources, each RF power source applying a respective RF signal and second RF signal to a load. The first RF signal is applied in accordance with the application of the second RF signal. The application of the first RF signal is synchronized to application of the second RF signal. The first RF signal may be amplitude modulated in synchronization with the second RF signal, and the amplitude modulation can include blanking of the first RF signal. A frequency offset may be applied to the first RF signal in synchronization with the second RF signal. A variable actuator associated with the first RF power source may be controlled in accordance with the second RF signal.Type: GrantFiled: June 26, 2019Date of Patent: October 26, 2021Assignees: MKS Instruments, Inc., Lam Research CorporationInventors: Aaron T. Radomski, Benjamin J. Gitlin, Larry J. Fisk, II, Mariusz Oldziej, Aaron M. Burry, Jonathan W. Smyka, Alexei Marakhtanov, Bing Ji, Felix Leib Kozakevich, John Holland, Ranadeep Bhowmick
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Publication number: 20210319980Abstract: A method for optimizing delivery of power to a plasma chamber is described. The method includes dividing each cycle of a low frequency (LF) radio frequency generator (RFG) into multiple time intervals. During each of the time intervals, a frequency offset of a high frequency (HF) RFG is generated for which the delivery of power is maximized The frequency offsets provide a substantially inverse relationship compared to a voltage signal of the LF RFG for each cycle of the voltage signal. The frequency offsets for the time intervals are multiples of the low frequency. The substantially inverse relationship facilitates an increase in the delivery of power to the electrode. A total range of the frequency offsets from a reference HF frequency over the LF RF cycle depends on a power ratio of power that is supplied by the LF RFG and power that is supplied by the HF RFG.Type: ApplicationFiled: September 28, 2018Publication date: October 14, 2021Inventors: Ranadeep Bhowmick, John Holland, Felix Leib Kozakevich, Bing Ji, Alexei Marakhtanov
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Publication number: 20200411289Abstract: A radio frequency (RF) generator system includes first and second RF power sources, each RF power source applying a respective RF signal and second RF signal to a load. The first RF signal is applied in accordance with the application of the second RF signal. The application of the first RF signal is synchronized to application of the second RF signal. The first RF signal may be amplitude modulated in synchronization with the second RF signal, and the amplitude modulation can include blanking of the first RF signal. A frequency offset may be applied to the first RF signal in synchronization with the second RF signal. A variable actuator associated with the first RF power source may be controlled in accordance with the second RF signal.Type: ApplicationFiled: June 26, 2019Publication date: December 31, 2020Inventors: Aaron T. RADOMSKI, Benjamin J. GITLIN, Larry J. FISK, II, Mariusz OLDZIEJ, Aaron M. BURRY, Jonathan W. SMYKA, Alexei MARAKHTANOV, Bing JI, Felix Leib KOZAKEVICH, John HOLLAND, Ranadeep BHOWMICK
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Patent number: 10861708Abstract: Systems and methods for applying three or more states for achieving a high aspect ratio dielectric etch operation are described. In one of the methods, a middle state is introduced between a high state and a low state. The middle state is applied to both a source radio frequency (RF) generator and a bias radio frequency (RF) generator. During the middle state, RF power is maintained to be between a high amount of RF power associated with the high state and a low amount of RF power associated with the low state to achieve the high aspect ratio dielectric etch.Type: GrantFiled: November 21, 2019Date of Patent: December 8, 2020Assignee: Lam Research CorporationInventors: Takumi Yanagawa, Nikhil Dole, Ranadeep Bhowmick, Eric Hudson, Felix Leib Kozakevich, John Holland, Alexei Marakhtanov, Bradford J. Lyndaker
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Publication number: 20200090948Abstract: Systems and methods for applying three or more states for achieving a high aspect ratio dielectric etch operation are described. In one of the methods, a middle state is introduced between a high state and a low state. The middle state is applied to both a source radio frequency (RF) generator and a bias radio frequency (RF) generator. During the middle state, RF power is maintained to be between a high amount of RF power associated with the high state and a low amount of RF power associated with the low state to achieve the high aspect ratio dielectric etch.Type: ApplicationFiled: November 21, 2019Publication date: March 19, 2020Inventors: Takumi Yanagawa, Nikhil Dole, Ranadeep Bhowmick, Eric Hudson, Felix Leib Kozakevich, John Holland, Alexei Marakhtanov, Bradford J. Lyndaker