Abstract: An example heterostructure semiconductor for sensing a gas comprises a substrate made of nanosheets of a compound of a first metal, wherein the compound of the first metal is sensitive to the gas to be sensed; one or more 1-Dimensional (1D) components fabricated on a surface of the substrate, the 1D components comprising a compound of a second metal, wherein the compound of the second metal is selective to the gas to be sensed; and a 2-Dimensional (2D) layer formed on the surface of the substrate in portions excluding the 1D components, wherein the 2D layer comprises compounds of the first and second metal. Method of fabrication of the heterostructure semiconductor and a chemiresistive sensor made thereof are also disclosed.

Abstract: The present invention provides an apparatus for the deposition of thin films on a substrate, including large substrates, held preferably face-down, in a cartridge containing a liquid solution with at least a chemical precursor which, upon being subject to a uniform microwave field transmitted through a microwave-transparent window, leads to the formation of a thin film on the substrate. The present invention also provides a system for launching microwaves and controlling the process for film deposition on the substrate. The present invention also provides a process for obtaining a film of uniform thickness and characteristics on a substrate or for incorporating controlled non-uniformity. The present invention also provides an apparatus and method for film deposition on a series of substrates in a continuous batch process.

Abstract: An example heterostructure semiconductor for sensing a gas comprises a substrate made of nanosheets of a compound of a first metal, wherein the compound of the first metal is sensitive to the gas to be sensed; one or more 1-Dimensional (1D) components fabricated on a surface of the substrate, the 1D components comprising a compound of a second metal, wherein the compound of the second metal is selective to the gas to be sensed; and a 2-Dimensional (2D) layer formed on the surface of the substrate in portions excluding the 1D components, wherein the 2D layer comprises compounds of the first and second metal. Method of fabrication of the heterostructure semiconductor and a chemiresistive sensor made thereof are also disclosed.

Abstract: The present invention provides a high-frequency integrated device, comprising a substrate including at least an on-chip active and passive member and a ferrite layer bonded to the substrate through an interfacial bridge and substantially wrapping plurality of surfaces of said at least on-chip active and passive members. The present invention also provides a system incorporating the high-frequency integrated device of the present invention. The present invention further provides a process for the preparation of the high-frequency integrated device.

Abstract: The present invention provides a high-frequency integrated device, comprising a substrate including at least an on-chip active and passive member and a ferrite layer bonded to the substrate through an interfacial bridge and substantially wrapping plurality of surfaces of said at least on-chip active and passive members. The present invention also provides a system incorporating the high-frequency integrated device of the present invention. The present invention further provides a process for the preparation of the high-frequency integrated device.