Abstract: A system includes a light source, a receiver, and an enclosure. The light source is configured to emit an optical signal and the receiver is configured to detect a received optical signal including at least a portion of the emitted optical signal scattered by an external target. The enclosure includes a housing and a semiconductor window. The semiconductor window includes a semiconductor material configured to allow at least a portion of the emitted optical signal and the received optical signal to pass through the semiconductor window. The enclosure, including the housing and the semiconductor window, is configured to attenuate radio-frequency (RF) electromagnetic radiation.

Abstract: A hermetic optical subassembly includes an optical bench having a mirror directing optical signals to/from an optical waveguide, a carrier supporting a photonic device, and an intermediate optical bench having a mirror directing optical signals between the photonic device and the optical bench. The optical bench and the intermediate optical bench optically aligns the photonic device to the waveguide along a desired optical path. In one embodiment, the photonic device is an edge emitting laser (EML). The mirror of the optical bench may be passively aligned with the mirror of the intermediate optical bench. The assembled components are hermetically sealed. The body of the optical benches are preferably formed by stamping a malleable metal material to form precise geometries and surface features. In a further aspect, the hermetic optical subassembly integrates a multiplexer/demultiplexer, for directing optical signals between a single optical fiber and a plurality of photonic devices.

Abstract: A hermetic optical subassembly includes an optical bench having a mirror directing optical signals to/from an optical waveguide, a carrier supporting a photonic device, and an intermediate optical bench having a mirror directing optical signals between the photonic device and the optical bench. The optical bench and the intermediate optical bench optically aligns the photonic device to the waveguide along a desired optical path. In one embodiment, the photonic device is an edge emitting laser (EML). The mirror of the optical bench may be passively aligned with the mirror of the intermediate optical bench. The assembled components are hermetically sealed. The body of the optical benches are preferably formed by stamping a malleable metal material to form precise geometries and surface features. In a further aspect, the hermetic optical subassembly integrates a multiplexer/demultiplexer, for directing optical signals between a single optical fiber and a plurality of photonic devices.

Abstract: A Mux/Demux subassembly includes a stamped optical bench, which includes an array of stamped reflective surfaces for redirecting optical signals. Alignment features and components of the Mux/Demux subassembly are integrally formed on a stamped optical bench, defining a desired optical path with optical alignment at tight tolerances. The optical bench is formed by stamping a malleable stock material (e.g., a metal stock), to form precise geometries and features of the optical bench.

Abstract: A Mux/Demux subassembly includes a stamped optical bench, which includes an array of stamped reflective surfaces for redirecting optical signals. Alignment features and components of the Mux/Demux subassembly are integrally formed on a stamped optical bench, defining a desired optical path with optical alignment at tight tolerances. The optical bench is formed by stamping a malleable stock material (e.g., a metal stock), to form precise geometries and features of the optical bench.

Abstract: A hermetic optical subassembly includes an optical bench having a mirror directing optical signals to/from an optical waveguide, a carrier supporting a photonic device, and an intermediate optical bench having a mirror directing optical signals between the photonic device and the optical bench. The optical bench and the intermediate optical bench optically aligns the photonic device to the waveguide along a desired optical path. In one embodiment, the photonic device is an edge emitting laser (EML). The mirror of the optical bench may be passively aligned with the mirror of the intermediate optical bench. The assembled components are hermetically sealed. The body of the optical benches are preferably formed by stamping a malleable metal material to form precise geometries and surface features. In a further aspect, the hermetic optical subassembly integrates a multiplexer/demultiplexer, for directing optical signals between a single optical fiber and a plurality of photonic devices.

Abstract: A hermetic optical subassembly includes an optical bench having a mirror directing optical signals to/from an optical waveguide, a carrier supporting a photonic device, and an intermediate optical bench having a mirror directing optical signals between the photonic device and the optical bench. The optical bench and the intermediate optical bench optically aligns the photonic device to the waveguide along a desired optical path. In one embodiment, the photonic device is an edge emitting laser (EML). The mirror of the optical bench may be passively aligned with the mirror of the intermediate optical bench. The assembled components are hermetically sealed. The body of the optical benches are preferably formed by stamping a malleable metal material to form precise geometries and surface features. In a further aspect, the hermetic optical subassembly integrates a multiplexer/demultiplexer, for directing optical signals between a single optical fiber and a plurality of photonic devices.

Abstract: A Mux/Demux subassembly includes a stamped optical bench, which includes an array of stamped reflective surfaces for redirecting optical signals. Alignment features and components of the Mux/Demux subassembly are integrally formed on a stamped optical bench, defining a desired optical path with optical alignment at tight tolerances. The optical bench is formed by stamping a malleable stock material (e.g., a metal stock), to form precise geometries and features of the optical bench.

Abstract: A hermetic optical subassembly includes an optical bench having a mirror directing optical signals to/from an optical waveguide, a carrier supporting a photonic device, and an intermediate optical bench having a mirror directing optical signals between the photonic device and the optical bench. The optical bench and the intermediate optical bench optically aligns the photonic device to the waveguide along a desired optical path. In one embodiment, the photonic device is an edge emitting laser (EML). The mirror of the optical bench may be passively aligned with the mirror of the intermediate optical bench. The assembled components are hermetically sealed. The body of the optical benches are preferably formed by stamping a malleable metal material to form precise geometries and surface features. In a further aspect, the hermetic optical subassembly integrates a multiplexer/demultiplexer, for directing optical signals between a single optical fiber and a plurality of photonic devices.

Abstract: A Mux/Demux subassembly includes a stamped optical bench, which includes an array of stamped reflective surfaces for redirecting optical signals. Alignment features and components of the Mux/Demux subassembly are integrally formed on a stamped optical bench, defining a desired optical path with optical alignment at tight tolerances. The optical bench is formed by stamping a malleable stock material (e.g., a metal stock), to form precise geometries and features of the optical bench.

Abstract: A solar collector concentrator having a generally hollow, tubular structure that is precision stamped to form a highly reflective inside surface conforming to a geometry that facilitates concentrating incident light/radiation to the output end. The concentrator may be a separate component separately formed by stamping a malleable stock material. The concentrator may be coupled to the base of a reflector in the collector. The concentrator and the reflector may be integrally formed together by stamping a malleable stock material. The relative positions of the integrally defined concentrator and the reflector are therefore passively aligned with high accuracy achieved from precision stamping. The secondary reflector may be formed by stamping.

Abstract: A low-emissivity multilayer coating includes, in order outward from the substrate, a first layer including a layer containing titanium oxide, a layer containing silicon nitride, or a sublayer layer containing titanium oxide in combination with a sublayer containing silicon 5 nitride, a second layer including Ag, a third layer including at least one layer selected from titanium oxide layers and silicon nitride layers, a fourth layer including Ag, and a fifth layer including silicon nitride, where the color of the coatings can be varied over a wide range by controlling the thicknesses of the layers of titanium oxide, silicon nitride and Ag.

Abstract: A low-emissivity multilayer coating includes, in order outward from the substrate, a first layer including a layer containing titanium oxide, a layer containing silicon nitride, or a sublayer layer containing titanium oxide in combination with a sublayer containing silicon 5 nitride, a second layer including Ag, a third layer including at least one layer selected from titanium oxide layers and silicon nitride layers, a fourth layer including Ag, and a fifth layer including silicon nitride, where the color of the coatings can be varied over a wide range by controlling the thicknesses of the layers of titanium oxide, silicon nitride and Ag.

Abstract: A low-emissivity multilayer coating includes, in order outward from the substrate, a first layer including a layer containing titanium oxide, a layer containing silicon nitride, or a sublayer layer containing titanium oxide in combination with a sublayer containing silicon nitride; a second layer including Ag; a third layer including at least one layer selected from titanium oxide layers and silicon nitride layers; a fourth layer including Ag; and a fifth layer including silicon nitride. The color of the coatings can be varied over a wide range by controlling the thicknesses of the layers of titanium oxide, silicon nitride and Ag. A diffusion barrier of oxidized metal protects relatively thin, high electrical conductivity, pinhole free Ag films grown preferentially on zinc oxide substrates. Oxygen and/or nitrogen in the Ag films improves the thermal and mechanical stability of the Ag.

Abstract: A low-emissivity multilayer coating includes, in order outward from the substrate, a first layer including a layer containing titanium oxide, a layer containing silicon nitride, or a sublayer layer containing titanium oxide in combination with a sublayer containing silicon nitride; a second layer including Ag; a third layer including at least one layer selected from titanium oxide layers and silicon nitride layers; a fourth layer including Ag; and a fifth layer including silicon nitride. The color of the coatings can be varied over a wide range by controlling the thicknesses of the layers of titanium oxide, silicon nitride and Ag. A diffusion barrier of oxidized metal protects relatively thin, high electrical conductivity, pinhole free Ag films grown preferentially on zinc oxide substrates. Oxygen and/or nitrogen in the Ag films improves the thermal and mechanical stability of the Ag.

Abstract: A low-emissivity multilayer coating includes, in order outward from the substrate, a first layer including a layer containing titanium oxide, a layer containing silicon nitride, or a sublayer layer containing titanium oxide in combination with a sublayer containing silicon nitride; a second layer including Ag; a third layer including at least one layer selected from titanium oxide layers and silicon nitride layers; a fourth layer including Ag; and a fifth layer including silicon nitride. The color of the coatings can be varied over a wide range by controlling the thicknesses of the layers of titanium oxide, silicon nitride and Ag. A diffusion barrier of oxidized metal protects relatively thin, high electrical conductivity, pinhole free Ag films grown preferentially on zinc oxide substrates. Oxygen and/or nitrogen in the Ag films improves the thermal and mechanical stability of the Ag.

Abstract: An optical coating on a transparent substrate is provided with a temporary layer of carbon as protection during manufacturing against scratches and corrosive environments. When the optical coating and/or substrate are tempered in an atmosphere reactive to carbon, such as air, the layer of carbon is removed as a carbon-containing gas. For an optical coating with a brittle, glassy, outermost layer furthest from the substrate, additional protection is provided by a scratch propagation blocker layer between the outermost layer and the carbon protective layer.

Abstract: A low-emissivity multilayer coating includes, in order outward from the substrate, a first layer including a layer containing titanium oxide, a layer containing silicon nitride, or a sublayer layer containing titanium oxide in combination with a sublayer containing silicon nitride; a second layer including Ag; a third layer including at least one layer selected from titanium oxide layers and silicon nitride layers; a fourth layer including Ag; and a fifth layer including silicon nitride. The color of the coatings can be varied over a wide range by controlling the thicknesses of the layers of titanium oxide, silicon nitride and Ag. A diffusion barrier of oxidized metal protects relatively thin, high electrical conductivity, pinhole free Ag films grown preferentially on zinc oxide substrates. Oxygen and/or nitrogen in the Ag films improves the thermal and mechanical stability of the Ag.

Abstract: A low-emissivity multilayer coating includes, in order outward from the substrate, a first layer including a layer containing titanium oxide, a layer containing silicon nitride, or a sublayer layer containing titanium oxide in combination with a sublayer containing silicon nitride; a second layer including Ag; a third layer including at least one layer selected from titanium oxide layers and silicon nitride layers; a fourth layer including Ag; and a fifth layer including silicon nitride. The color of the coatings can be varied over a wide range by controlling the thicknesses of the layers of titanium oxide, silicon nitride and Ag. A diffusion barrier of oxidized metal protects relatively thin, high electrical conductivity, pinhole free Ag films grown preferentially on zinc oxide substrates. Oxygen and/or nitrogen in the Ag films improves the thermal and mechanical stability of the Ag.

Abstract: A film is applied to a substrate in accordance with a predetermined pattern by applying a solution of a copolymer of fluoropolymers dissolved in a solvent onto the surface of the substrate; curing and annealing the solution to boil off the solvent and form a copolymer film on the substrate; depositing a thin metal film on the copolymer film; patterning the thin metal film by a photoresist etching process to expose the underlying copolymer film in accordance with the predetermined pattern; removing the exposed copolymer film so that the underlying substrate is exposed in accordance with the predetermined pattern; removing any remaining thin metal film; depositing the film to the remaining copolymer film and exposed substrate; then removing the remaining copolymer film and any film applied thereon by ultrasonic cleaning.