Patents by Inventor Rand Haddadin

Rand Haddadin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240074162
    Abstract: Methods for DRAM device with a buried word line are described. The method includes forming a metal nitride layer comprising lanthanum nitride (LaN) and a molybdenum conductor layer in a feature on a substrate. The method includes depositing the molybdenum conductor layer by atomic layer deposition (ALD) on the metal nitride layer.
    Type: Application
    Filed: August 30, 2022
    Publication date: February 29, 2024
    Applicant: Applied Materials, Inc.
    Inventors: Rand Haddadin, Kunal Bhatnagar
  • Publication number: 20240035149
    Abstract: Embodiments of the disclosure relate to methods for molybdenum gapfill. Additional embodiments provide a method of forming a molybdenum gapfill without substantial voids. Some embodiments of the disclosure are relevant for higher aspect ratio features including DRAM memory cells.
    Type: Application
    Filed: July 29, 2022
    Publication date: February 1, 2024
    Applicant: Applied Materials, Inc.
    Inventors: Rand Haddadin, Kunal Bhatnagar
  • Publication number: 20240035151
    Abstract: Methods for selective deposition are described herein. The methods include depositing an oxide on a first portion of a substrate surface selected from the group consisting of a metal surface, a metal nitride surface and a metal silicide surface. The methods further comprise selectively depositing a molybdenum film on a second portion of the substrate surface that does not have the oxide deposited thereon.
    Type: Application
    Filed: July 17, 2023
    Publication date: February 1, 2024
    Applicant: Applied Materials, Inc.
    Inventors: Rand Haddadin, Kunal Bhatnagar, Mohith Verghese, Jose Alexandro Romero, Aniruddh Shekhawat