Abstract: A method for depositing a layer on a semiconductor wafer by vapor deposition in a process chamber, involves removing native oxide from a surface of the wafer; and then depositing an epitaxial layer with a thickness of at least 40 ?m on the surface of the wafer by introducing a silicon containing gas and a carrier gas into the process chamber, wherein the flow rate of the silicon containing gas is lower than 10 standard liters per minute and the flow rate of the carrier gas is at least 40 standard liters per minute.

Abstract: A method for depositing a layer on a semiconductor wafer by vapor deposition in a process chamber, involves removing native oxide from a surface of the wafer; and then depositing an epitaxial layer with a thickness of at least 40 ?m on the surface of the wafer by introducing a silicon containing gas and a carrier gas into the process chamber, wherein the flow rate of the silicon containing gas is lower than 10 standard liters per minute and the flow rate of the carrier gas is at least 40 standard liters per minute.

Abstract: An apparatus and method for etching a portion of a wafer include a mount for holding a wafer having an edge, a front surface, a back surface and an axis perpendicular to the front and back surfaces. A frame is used to deliver an etchant to the wafer edge while the wafer is held with the wafer edge at a distance from the frame. A nonreactive fluid flow may be provided and directed along the front and back surfaces of the wafer edge to drive the etchant away from the front and back surfaces. The frame can be configured either to deliver the etchant in liquid form or to deliver the etchant in vapor form. The frame can include a plenum for directing the etchant in vapor form to the wafer edge within a receiving area of the plenum, or the frame can include a roller having a groove for receiving the wafer edge and for drawing the etchant in liquid form to the wafer edge.