Patents by Inventor Randall C. Hildenbrand

Randall C. Hildenbrand has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5248636
    Abstract: A processing apparatus and method wherein a wafer is exposed to activated species generated by a first plasma which is separate from the wafer, but is in the process gas flow stream upstream of the wafer, and is also exposed to plasma bombardment generated by a second plasma which has a dark space which substantially adjoins the surface of the wafer. The in situ plasma is relatively low-power, so that the remote plasma can generate activated species, and therefore the in situ plasma power level can be adjusted to optimize the plasma bombardment. Ultraviolet light to illuminate the face of a wafer being processed is generated by a plasma which is within the vacuum chamber but is remote from the face of the wafer. It is useful to design the gas flow system such that the ultraviolet-generating plasma has its own gas feed, and the reaction products from the ultraviolet-generating plasma do not substantially flow or diffuse to the wafer face.
    Type: Grant
    Filed: June 2, 1992
    Date of Patent: September 28, 1993
    Assignee: Texas Instruments Incorporated
    Inventors: Cecil J. Davis, Rhett B. Jucha, Joseph D. Luttmer, Rudy L. York, Lee M. Loewenstein, Robert T. Matthews, Randall C. Hildenbrand
  • Patent number: 5138973
    Abstract: A processing apparatus and method wherein a wafer is exposed to activated species generated by a first plasma which is separate from the wafer, but is in the process gas flow stream upstream of the wafer, and is also exposed to plasma bombardment generated by a second plasma which has a dark space which substantially adjoins the surface of the wafer. The in situ plasma is relatively low-power, so that the remote plasma can generate activated species, and therefore the in situ plasma power level can be adjusted to optimize the plasma bombardment. Ultraviolet light to illuminate the face of a wafer being processed is generated by a plasma which is within the vacuum chamber but is remote from the face of the wafer and controlled independent of the in situ plasma. It is useful to design the gas flow system such that the ultraviolet-generating plasma has its own gas feed, and the reaction products from the ultraviolet-generating plasma do not substantially flow or diffuse to the wafer face.
    Type: Grant
    Filed: December 5, 1988
    Date of Patent: August 18, 1992
    Assignee: Texas Instruments Incorporated
    Inventors: Cecil J. Davis, Rhett B. Jucha, Joseph D. Luttmer, Rudy L. York, Lee M. Loewenstein, Robert T. Matthews, Randall C. Hildenbrand
  • Patent number: 4886570
    Abstract: A process module having remote plasma and in situ plasma generators, a source of ultraviolet, and a radiant heater, which represent four separate energy sources. The four sources can be used singly or in any combination and can be separately controllable.
    Type: Grant
    Filed: December 2, 1988
    Date of Patent: December 12, 1989
    Assignee: Texas Instruments Incorporated
    Inventors: Cecil J. Davis, Robert T. Matthews, Lee M. Loewenstein, Rhett B. Jucha, Randall C. Hildenbrand, John I. Jones
  • Patent number: 4872938
    Abstract: A process module which is compatible with a system using vacuum wafer transport in which wafers are generally transported and processed in a face down position under vacuum, and which also includes an additional wafer movement, wherein, after a wafer has been emplaced face down, in a position where it can be clamped against the susceptor, the susceptor is rotated from its approximately horizontal position up to a more nearly vertical position. In the more nearly vertical position, the wafer can be processed by a top process module, which may be, e.g., a sputter system, an implanter, or an inspection module. Another process module is included in the bottom part of the chamber, so that the wafer can be processed by the lower process module while in its substantially horizontal position and processed by the upper process module when it is in its more nearly vertical position. This is especially advantageous when the lower process module is a plasma cleanup module and the top module is a deposition module.
    Type: Grant
    Filed: April 25, 1988
    Date of Patent: October 10, 1989
    Assignee: Texas Instruments Incorporated
    Inventors: Cecil J. Davis, Joseph V. Abernathy, Robert T. Matthews, Randall C. Hildenbrand, Bruce Simpson, John I. Jones, Lee M. Loewenstein, James G. Bohlman
  • Patent number: 4836905
    Abstract: A processing apparatus and method which permits sputter deposition and which is compatible with a vacuum processing system wherein the wafers are largely transferred and processed in the face down position. This includes an additional wafer movement, wherein, after a wafer has been emplaced face down, in a position where it can be clamped against the susceptor, the susceptor is rotated from its approximately horizontal position up to a more nearly vertical position. While the wafer is in the more nearly vertical position, sputter deposition may be performed. In situ or remote plasma capability is usefully provided in the bottom part of the chamber, so that a dry deglaze or cleanup step can be performed while the wafer is in its substantially horizontal position, followed by a sputter deposition after the wafer has been moved to its more nearly vertical position.
    Type: Grant
    Filed: July 16, 1987
    Date of Patent: June 6, 1989
    Assignee: Texas Instruments Incorporated
    Inventors: Cecil J. Davis, Joseph V. Abernathy, Robert T. Matthews, Randall C. Hildenbrand, Bruce Simpson, James G. Bohlman, Lee M. Loewenstein, John I. Jones
  • Patent number: 4822450
    Abstract: A processing apparatus and method compatible with a vacuum process system for wafers, wherein an in situ source of ultraviolet light is provided to enhance chemical activity at the wafer surface, and a remote plasma source is provided in the process gas flow upstream of the wafer, to provide activated species to the wafer face, and a radiatively coupled heat source is also provided so that the wafer can be rapidly thermally cycled.
    Type: Grant
    Filed: May 18, 1988
    Date of Patent: April 18, 1989
    Assignee: Texas Instruments Incorporated
    Inventors: Cecil J. Davis, Lee M. Loewenstein, Rhett B. Jucha, Robert T. Matthews, Randall C. Hildenbrand, Dean W. Freeman, John I. Jones
  • Patent number: 4816116
    Abstract: A complete integrated circuit processing module, wherein multiple processing stations, each with its own vacuum isolation, are located inside a single module which is held at hard vacuum. A wafer transport arm mechanism permits interchange of wafers among the processing stations and a load lock. The load lock is equipped to remove and replace wafers from a vacuum-sealed wafer carrier. The wafers remain face-down and under hard vacuum during all the wafers handling steps.
    Type: Grant
    Filed: November 3, 1987
    Date of Patent: March 28, 1989
    Assignee: Texas Instruments Incorporated
    Inventors: Cecil J. Davis, Robert Matthews, Randall C. Hildenbrand
  • Patent number: 4687542
    Abstract: A system for performing one semiconductor manufacturing operation or sequence of operations with reduced particulate contamination. A vacuum-tight wafer carrier, which contains numerous wafers in vacuum in a sealed box, is placed into a platform inside a vacuum load lock. The platform contains slots and protruding fingers to provide accurate registration of the position of the wafer carrier. After the load lock is pumped down, the door of the wafer carrier is opened, and a transfer arm removes wafers from the wafer carrier, in any desired order, and transfers them one by one through a port into a processing chamber.
    Type: Grant
    Filed: October 24, 1985
    Date of Patent: August 18, 1987
    Assignee: Texas Instruments Incorporated
    Inventors: Cecil J. Davis, Robert Matthews, Randall C. Hildenbrand
  • Patent number: 4657618
    Abstract: An electrode and substrate assembly for a plasma reactor allows high power plasma processing with low frequency excitation. The electrode sub-assembly is contained in a chamber which is used for pre-treatment such as de-scumming photoresist or for post-etch resist stripping and passivation. A post-etch treatment is essential in plasma aluminum etching.
    Type: Grant
    Filed: October 22, 1984
    Date of Patent: April 14, 1987
    Assignee: Texas Instruments Incorporated
    Inventors: John E. Spencer, Randall E. Johnson, Dan T. Hockersmith, Randall C. Hildenbrand, John I. Jones, William S. Jaspersen
  • Patent number: 4657620
    Abstract: A plasma reactor for the manufacturing of semiconductor devices has powered loadlocks and a main process chamber where slices can be processed one slice at a time with pre-etch plasma treatments before the main etching processing and afterwards receive a post etch treatment. The system comprises powered loadlocks, a main chamber, vacuum pumps radio frequency power supplier, radio frequency matching networks, heat exchangers and throttle valve and pressure controllers, gas flow distribution and microprocessor controllers. The semiconductor wafers are automatically fed one at a time from storage cassettes through isolation gates with articulated mechanical arms to a powered entry loadlock for pre-etching processes. At the completion of the pre-etching processing, the semiconductor wafer is transferred to the main chamber automatically for the main etch process and then to the powered exit loadlock for post etch treatment and finally to an output cassette.
    Type: Grant
    Filed: October 22, 1984
    Date of Patent: April 14, 1987
    Assignee: Texas Instruments Incorporated
    Inventors: Cecil J. Davis, John E. Spencer, Dan T. Hockersmith, Randall C. Hildenbrand, Frederick W. Brown, Stanford P. Kohan