Abstract: Apparatus for atmosphere-modifying and sealing individual trays includes a film disposing roller disposed closely adjacent the top of the tray to define a nip region and an elongated gas injection nozzle spanning the nip region for injecting gas through the nip region between the film and the tray. A split conveyor belt advances the trays past the film disposing roller to a sealing unit utilizing band sealers for the longitudinal tray edges and reciprocal "hot bar" sealer for the leading and trailing tray edges. The gas injection nozzle injects the gas substantially perpendicular to the advancing direction, down and into the individual trays. An optional second gas nozzle provides a gas flow curtain across the tray leading edge.

Abstract: A three dimensional package having at least one semiconductor chip having input/output conductive pads along its periphery includes a dielectric carrier over at least a portion of the chip and a plurality of conductors mounted on the carrier between the chip and the dielectric carrier. The plurality of conductors are mounted within the periphery of the chip with one end connected to the conductive pads and with the other end of the plurality of conductors exiting from the same side of the chip. The plurality of conductors exiting from the same side are electrically coupled to an interconnect substrate.

Abstract: A radio frequency (RF) glow discharge plasma etch electrode design is disclosed which is capable of creating high power density plasma with uniform etch rates, while providing access for automatic loading semiconductor wafers from outside of the plasma region. The electrode assembly comprises of an electrode to which RF energy is applied surrounded by an insulator, which in turn surrounded a grounded surface all of which have cylindrical symmetry. When placed a small distance from a flat, grounded substrate, the electrode assembly creates a volume which can effectively combine a high power density plasma, while maintaining a sufficient channel for pumping a gas flow and for observing the plasma optically. The same channel is widened for automatic transport of semiconductor wafers from outside of the plasma reactor chamber. Such confined high power density plasma are important for high rate, uniform, anisotropic etching, especially for silicon dioxide.

Abstract: A plasma etch system that processes one slice at a time is disclosed. The system is comprised of an entry loadlock, an exit loadlock, a main chamber, vacuum pumps, RF power supply, RF matching network, a heat exchanger, throttle valve and pressure control gas flow distribution and a microprocessor controller. A multiple slice cassette full of slices is housed in the entry load lock and after pumping to process pressure, a single slice at a time is moved by an articulated arm from the cassette through an isolation gate to the main process chamber. The slice is etched and removed from the main process chamber through a second isolation gate by a second articulated arm to a cassette in the exit loadlock. The process is repeated until all semiconductor wafers have been etched.

Abstract: A low particulate vacuum chamber semiconductor wafer input/output valve minimizes the particulate generation by taking advantage of a camming motion at the instant of closing to insure that the valve closes normal to the reaction chamber wall. This eliminates any friction between a glandular seal in the vacuum chamber wall. As the valve closes, it strikes a stop which causes a 90 degree change in direction of the valve forcing it into tape cut. This change of direction is accomplished through a combination of an upper motion of a backing plate, and a spring-loaded linkage in stock. As the gate closes there is some particulte generated at the interface of the valve plate and the stop. This is handled by placing the area of contact outside the transportation path for the semiconductor wafer.

Abstract: A substrate to use as electrode in a plasma etch reactor is fabricated from aluminum with an annulus that is anodized to protect it from being exposed to the plasma.

Abstract: An electrode and substrate assembly for a plasma reactor allows high power plasma processing with low frequency excitation. The electrode sub-assembly is contained in a chamber which is used for pre-treatment such as de-scumming photoresist or for post-etch resist stripping and passivation. A post-etch treatment is essential in plasma aluminum etching.

Abstract: A plasma etch system that processes one slice at a time is disclosed. The system is comprised of an entry loadlock, an exit loadlock, a main chamber, vacuum pumps, RF power supply, RF matching network, a heat exchanger, throttle valve and pressure control gas flow distribution and a microprocessor controller. A multiple slice cassette full of slices is housed in the entry load lock and after pumping to process pressure, a single slice at a time is moved by an articulated arm from the cassette through an isolation gate to the main process chamber. The slice is etched and removed from the main process chamber through a second isolation gate by a second articulated arm to a cassette in the exit loadlock. The process is repeated until all semiconductor wafers have been etched.