Abstract: Spectral imaging systems and methods are provided for monitoring a substrate during a chemical-mechanical planarization process. An example system includes a carrier configured to receive a substrate, and a platen configured to receive a polishing pad. The platen includes an aperture configured to pass light. The system also includes a frame that disposes the platen in any number of positions relative to the carrier. An optoelectronic system is coupled to the aperture, and the aperture passes light of the optoelectronic system to illuminate the substrate and passes reflected light from the substrate to the optoelectronic system. A processing system is coupled to the optoelectronic system and uses the reflected light to image the substrate as the polishing pad is polishing the substrate.

Abstract: Devices and methods for determining wafer orientation in spectral imaging are described. The devices and methods generate an image of a wafer that includes at least one spectral dimension. One or more properties are determined from the spectral dimension, and a map is generated based on the property. The generated map is compared to at least one other map, and data or information of the comparison is used to locate a region of the wafer, for example a measurement pad or other structure.

Abstract: An apparatus or method captures reflectance spectrum for each of a plurality of spatial locations on the surface of a patterned wafer. A spectrometer system having a wavelength-dispersive element receives light reflected from the locations and separates the light into its constituent wavelength components. A one-dimensional imager scans the reflected light during translation of the wafer with respect to the spectrometer to obtain a set of successive, spatially contiguous, one-spatial dimension spectral images. A processor aggregates the images to form a two-spatial dimension spectral image. One or more properties of the wafer, such as film thickness, are determined from the spectral image. The apparatus or method may provide for relatively translating the wafer at a desired angle with respect to the line being imaged by the spectrometer to enhance measurement spot density, and may provide for automatic focusing of the wafer image by displacement sensor feedback control.

Abstract: An apparatus or method captures reflectance spectrum for each of a plurality of spatial locations on the surface of a patterned wafer. A spectrometer system having a wavelength-dispersive element receives light reflected from the locations and separates the light into its constituent wavelength components. A one-dimensional imager scans the reflected light during translation of the wafer with respect to the spectrometer to obtain a set of successive, spatially contiguous, one-spatial dimension spectral images. A processor aggregates the images to form a two-spatial dimension spectral image. One or more properties of the wafer, such as film thickness, are determined from the spectral image. The apparatus or method may generate a wavelength-dependent correction factor to correct for diffraction errors introduced in reflectance spectra by the wavelength-dispersive element. The invention provides for automatic rotation of a patterned wafer to determine Goodness of Alignment during a measurement process.