Abstract: An example article includes a composite free layer and a conductive channel. The composite free layer includes a high-anisotropy ferromagnetic layer, a non-magnetic transition metal layer adjacent to the high anisotropy ferromagnetic layer, and an ultra-low damping magnetic insulator. The non-magnetic transition metal layer is between the ultra-low damping magnetic insulator and the high-anisotropy ferromagnetic layer. An example spin-orbit torque (SOT) stack may include the example article. Techniques for forming and switching example articles and SOT stacks are described.

Abstract: An example article includes a composite free layer and a conductive channel. The composite free layer includes a high-anisotropy ferromagnetic layer, a non-magnetic transition metal layer adjacent to the high anisotropy ferromagnetic layer, and an ultra-low damping magnetic insulator. The non-magnetic transition metal layer is between the ultra-low damping magnetic insulator and the high-anisotropy ferromagnetic layer. An example spin-orbit torque (SOT) stack may include the example article. Techniques for forming and switching example articles and SOT stacks are described.

Abstract: An example article includes a composite free layer and a conductive channel. The composite free layer includes a high-anisotropy ferromagnetic layer, a non-magnetic transition metal layer adjacent to the high-anisotropy ferromagnetic layer, and an ultra-low damping magnetic insulator. The non-magnetic transition metal layer is between the ultra-low damping magnetic insulator and the high-anisotropy ferromagnetic layer. An example spin-orbit torque (SOT) stack may include the example article. Techniques for forming and switching example articles and SOT stacks are described.

Abstract: An example article includes a composite free layer and a conductive channel. The composite free layer includes a high-anisotropy ferromagnetic layer, a non-magnetic transition metal layer adjacent to the high-anisotropy ferromagnetic layer, and an ultra-low damping magnetic insulator. The non-magnetic transition metal layer is between the ultra-low damping magnetic insulator and the high-anisotropy ferromagnetic layer. An example spin-orbit torque (SOT) stack may include the example article. Techniques for forming and switching example articles and SOT stacks are described.

Abstract: In general, the invention is directed to techniques for reducing the amount of switching current that is utilized within a magnetic storage (e.g., MRAM) device. An example apparatus includes a fixed magnetic layer that provides a fixed direction of magnetization, an exchange-coupled magnetic multi-layer structure, and a non-magnetic layer placed between the fixed magnetic layer and the exchange-coupled magnetic multi-layer structure. The exchange-coupled magnetic multi-layer structure includes a recording layer configured to record information and an assisting layer having a lower anisotropy than the recording layer. The exchange coupling between the recording and assisting layers is operable to switch a magnetization direction of the recording layer. In some cases, the exchange-coupled magnetic multi-layer structure may further include a spacer separating the recording and assisting layers and configured to weaken an exchange coupling between the recording and assisting layers.

Abstract: In general, the invention is directed to techniques for reducing the amount of switching current that is utilized within a magnetic storage (e.g., MRAM) device. An example apparatus includes a fixed magnetic layer that provides a fixed direction of magnetization, an exchange-coupled magnetic multi-layer structure, and a non-magnetic layer placed between the fixed magnetic layer and the exchange-coupled magnetic multi-layer structure. The exchange-coupled magnetic multi-layer structure includes a recording layer configured to record information and an assisting layer having a lower anisotropy than the recording layer. The exchange coupling between the recording and assisting layers is operable to switch a magnetization direction of the recording layer. In some cases, the exchange-coupled magnetic multi-layer structure may further include a spacer separating the recording and assisting layers and configured to weaken an exchange coupling between the recording and assisting layers.

Abstract: Embodiments of a data storage system having thermally activated readout are provided, in one embodiment, a data storage system includes a source of heat, a substrate, a write layer disposed above the substrate, a copy layer disposed above the write layer, a flying head disposed above the layers and carrying the source of heat for heating a selected spot on the copy and write layers, wherein the write layer comprises a ferromagnetic material selected to have an extremely high coercivity at room temperature and a very high write temperature Twrite, and the copy layer comprises a ferromagnetic material selected to have a coercivity always less than coercivity of the write layer at the same temperature and a copy temperature Tcopy substantially less than the write temperature of the write layer.

Abstract: An optical recording medium comprising a first substrate with a center mounting hole and having top and bottom surfaces. At least one surface of the substrate is a prerecorded area wherein user data is provided and adapted to be read in an optical recording medium reader device. Over at least a portion of the substrate that can be read by the device is a photosensitive layer comprising a photosensitive material. When the photosensitive material is exposed to a predefined wavelength of light over a predetermined period of time the optical property of at least a portion of the material permanently changes. This change occurs after each copy of the prerecorded area is made. Thereby, the optical recording medium limits the authorized copies of the prerecorded area to a predetermined number.

Abstract: A compositionally modulated magneto-optic structure includes a plurality of layers defining a layer stack, the overall layer stack including the elements Tb, Fe, and Pb; or the elements Tb, Co, and Pb; or the elements Tb, Fe, and Bi; or the elements Tb, Co and Bi.

Abstract: An optical storage device comprising at least two spaced apart recording layers, a spacer layer separating by being positioned between alternating recording layers, and each recording layer including a material responsive to a beam of radiation from a source to record information and at least one recording layer having a different write temperature selected to improve recording performance parameters.

Abstract: The present invention pertains to a storage medium for use in a magneto-optical storage system. The storage medium comprises two layers of magnetic material, a storage layer and a read layer. The magnetic material of the storage layer has perpendicular (or vertical) axis of orientation; and within the storage layer the direction of magnetic orientation is either parallel or anti-parallel (up or down) relative to the direction of an impinging read radiation beam. In this storage system, the direction of orientation of magnetic material in one direction represents a first logical state, and a direction of orientation in the opposite direction represents a second logical state. The direction of orientation is thus a function of stored data.

Abstract: A storage medium for use in a magneto-optical information storage medium does not require an initializing magnet. In one embodiment of the medium, a structure includes a memory layer, in which the orientation of magnetic regions perpendicular to the memory layer surface defines the data stored in the memory layer, a reference layer, and an intermediate layer, the intermediate layer mediating an exchange coupling between the memory layer and the reference layer. The combined properties of the storage medium provide a temperature at which, in the presence of a bias magnetic field, data stored in the medium in the form of oriented magnetic domains can be overwritten. In a second embodiment of the invention, a storage medium has two layers, a memory layer and a under layer, of materials with selected magnetic properties.