Abstract: A bootstrap current reference circuit having an n-type negative resistance network, and a biasing device responsive to operating current of the n-type negative resistance network for biasing the network to operate as a current source at an operating point substantially in a region of a predetermined current peak associated with the n-type negative resistance network. In one embodiment the circuit includes a depletion-mode FET (DFET) and a stable trimmed n-type negative resistance device (ST-NNRD) connected in series with the source of the DFET. The gate of the DFET is feedback coupled to the output of the ST-NNRD so as to bias it in a region of operation in which it exhibits a large incremental resistance, thus bootstrapping the circuit to operate in a state substantially independent of fluctuations associated with supply voltage source. In an alternate embodiment, the circuit includes a ST-NNRD connected in series with the source terminal of a DFET.

Abstract: A bootstrap voltage reference circuit having an amplifier with a positive feedback network including a non-linear device which operates as a current source. The non-linear device may be an n-type negative resistance device such as a tunnel diode. The circuit is operable for generating a predetermined reference voltage as the difference between the signal applied to the positive input and a signal generated by the negative feedback network and applied to the negative input approaches zero.

Abstract: A tunnel diode voltage reference circuit includes a tunnel diode; bias voltage circuit for biasing the tunnel diode to operate in the region of the peak current where the tunnel diode output current variation is a fraction of the bias voltage variation; and circuits responsive to the tunnel diode output current, for isolating the tunnel diode output from load variations and converting the tunnel diode output to a reference voltage. A resistance may be placed in parallel with the tunnel diode for raising the negative resistance region to the levels of the peak region to flatten the slope of the negative resistance region between the peak and the valley regions, reducing the reference voltage variation at bias points greater than the peak voltage of the tunnel diode characteristic.