Abstract: A system comprising a light source, and a retention device configured to receive and retain a sample for measurement. The system includes a detector. An optical path couples light between the light source, the sample when present, and the detector. An optical objective is configured to couple light from the light source to the sample when present, and couple reflected light to the detector. A controller is configured to automatically control focus and/or beam path of the light directed by the optical objective to the sample when present. The system includes a spatially variable filter (SVF) positioned in the optical path. The SVF is configured to have spectral properties that vary as a function of illuminated position on the SVF.

Abstract: A system comprising a light source configured to illuminate a sample under measurement. The system includes a detector configured to receive reflected light from the sample, and the detector generates a signal representing the reflected light. A spatially variable filter (SVF) is positioned in the optical path. The SVF is configured to have spectral properties that vary as a function of illuminated position on the SVF.

Abstract: A system comprising a light source, and a retention device configured to receive and retain a sample for measurement. The system includes a detector. An optical path couples light between the light source, the sample when present, and the detector. An optical objective is coupled to a turret assembly and configured to couple light from the light source to the sample when present, and couple reflected light to the detector. An amplified piezo actuator (APA) assembly is coupled to the turret assembly. A controller is coupled to the APA assembly and configured to automatically control a vertical position of the optical objective using the APA assembly. The detector is configured to output data representing a film thickness and a surface profile of the sample when present.

Abstract: A system comprising a light source, and a retention device configured to receive and retain a sample for measurement. The system includes a detector. An optical path couples light between the light source, the sample when present, and the detector. An optical objective is configured to couple light from the light source to the sample when present, and couple reflected light to the detector. A controller is configured to automatically control focus and/or beam path of the light directed by the optical objective to the sample when present. The detector is configured to output data representing a film thickness and a surface profile of the sample when present.

Abstract: A system comprising a light source, and a retention device configured to receive and retain a sample for measurement. The system includes a detector. An optical path couples light between the light source, the sample when present, and the detector. An optical objective is configured to couple light from the light source to the sample when present, and couple reflected light to the detector. A controller is configured to automatically control focus and/or beam path of the light directed by the optical objective to the sample when present. The system includes a spatially variable filter (SVF) positioned in the optical path. The SVF is configured to have spectral properties that vary as a function of illuminated position on the SVF.

Abstract: A system comprising a light source configured to illuminate a sample under measurement. The system includes a detector configured to receive reflected light from the sample, and the detector generates a signal representing the reflected light. A spatially variable filter (SVF) is positioned in the optical path. The SVF is configured to have spectral properties that vary as a function of illuminated position on the SVF.

Abstract: Embodiments described herein correct errors in spectrometer outputs due to the presence of second-order light. Embodiments determine a relationship between first-order light and second-order light of the spectrometer output. The relationship is a function of wavelength and an output of the spectrometer due to the first-order light. The relationship is used to determine an estimated contribution of the second-order light to the output. Spectrometer errors introduced by the second-order light are corrected by adjusting the spectrometer output according to the estimated contribution of the second-order light.

Abstract: Embodiments described herein correct errors in spectrometer outputs due to the presence of second-order light. Embodiments determine a relationship between first-order light and second-order light of the spectrometer output. The relationship is a function of wavelength and an output of the spectrometer due to the first-order light. The relationship is used to determine an estimated contribution of the second-order light to the output. Spectrometer errors introduced by the second-order light are corrected by adjusting the spectrometer output according to the estimated contribution of the second-order light.

Abstract: Reflectance systems and methods are described that use information of an intermediate reference signal to continuously monitor, detect and/or compensate for drift in a metrology system. The intermediate reference signal is present regardless of whether a sample is being measured. The reflectance system comprises components including a transmission element coupled to a sample area and a receiver. The transmission element is configured to route signals between components of the system. The signals include an illumination signal, and a sample signal resulting from interaction of the illumination signal with a sample when the sample is present in the sample area. The signals also include the reference signal that results from interaction of the illumination signal with one or more components of the system.

Abstract: Reflectance systems and methods are described that use information of an intermediate reference signal to continuously monitor, detect and/or compensate for drift in a metrology system. The intermediate reference signal is present regardless of whether a sample is being measured. The reflectance system comprises components including a transmission element coupled to a sample area and a receiver. The transmission element is configured to route signals between components of the system. The signals include an illumination signal, and a sample signal resulting from interaction of the illumination signal with a sample when the sample is present in the sample area. The signals also include the reference signal that results from interaction of the illumination signal with one or more components of the system.

Abstract: Devices and methods for determining wafer orientation in spectral imaging are described. The devices and methods generate an image of a wafer that includes at least one spectral dimension. One or more properties are determined from the spectral dimension, and a map is generated based on the property. The generated map is compared to at least one other map, and data or information of the comparison is used to locate a region of the wafer, for example a measurement pad or other structure.

Abstract: A system is described that permits high-speed, high-resolution mapping of thicknesses (or other properties) of layers on patterned semiconductor wafers. The system comprises one or more spectrometers that each simultaneously image a plurality of spatial locations. In one example, the spectrometer comprises a two-dimensional CCD imager with one axis of the imager measuring spectral data and the other axis measuring spatial data. Spectral reflectance or transmission of the patterned wafer under test is obtained by passing the wafer under (or over) the imaging spectrometer(s) and taking sequential reflectance or transmission images for successive pluralities of spatial locations. The resulting spectral reflectance or transmission map can then be analyzed at discrete locations to determine the thicknesses or other properties of the layers at those locations.

Abstract: Systems of and methods for capturing a plurality of one-dimensional images representative of substantially all of the surface of a substrate within a single revolution of a rotating platen holding a polishing pad in operative contact with the surface of the substrate during chemical-mechanical planarization. A two-dimensional image comprising frame data, which may comprise a spectral image, is derived from the plurality of one-dimensional images. The frame data provides information useful for subsequent chemical-mechanical processing of the substrate.

Abstract: A system is described that permits high-speed, high-resolution mapping of thicknesses (or other properties) of layers on patterned semiconductor wafers. The system comprises one or more spectrometers that each simultaneously image a plurality of spatial locations. In one example, the spectrometer comprises a two-dimensional CCD imager with one axis of the imager measuring spectral data and the other axis measuring spatial data. Spectral reflectance or transmission of the patterned wafer under test is obtained by passing the wafer under (or over) the imaging spectrometer(s) and taking sequential reflectance or transmission images for successive pluralities of spatial locations. The resulting spectral reflectance or transmission map can then be analyzed at discrete locations to determine the thicknesses or other properties of the layers at those locations.

Abstract: A Group III-V semiconductor optoelectronic device provides for visible wavelength light output having a more laterally uniform, high power beam profile, albeit still quasi-Gaussian. A number of factors contribute to the enhanced profile including an improvement in reducing band offset of the Group III-V deposited layers improving carrier density through a decrease in the voltage drop required to generate carrier flow; reduction of contaminants in the growth of Group III-V AlGaInP-containing layers with compositional Al, providing for quality material necessary to achieve operation at the desired visible wavelengths; the formation of an optical resonator cavity that provides, in part, weak waveguiding of the propagating light; and the utilization of a mechanism to provide for beam spreading and filing in a beam diverging gain section prior to actively aggressive gain pumping of the propagating light in the device.

Abstract: A Group III-V semiconductor optoelectronic device provides for visible wavelength light output having a more laterally uniform, high power beam profile, albeit still quasi-Gaussian. A number of factors contribute to the enhanced profile including an improvement in reducing band offset of the Group III-V deposited layers improving carrier density through a decrease in the voltage drop require to generate carrier flow; reduction of contaminants in the growth of Group III-V AlGaInP-containing layers with compositional Al, providing for quality material necessary to achieve operation at the desired visible wavelengths; the formation of an optical resonator cavity that provides, in part, weak waveguiding of the propagating light; and the utilization of a mechanism to provide for beam spreading and filing in a beam diverging gain section prior to actively aggressive gain pumping of the propagating light in the device.

Abstract: A spectrometer for providing multiple, simultaneous spectra from independent light sources is described characterized in that light from the multiple sources is directed to different portions of a diffraction grating, and the wavelength components of the resultant spectra are directed to at least one receptor.

Abstract: A Group III-V semiconductor optoelectronic device provides for visible wavelength light output having a more laterally uniform, high power beam profile, albeit still quasi-Gaussian. A number of factors contribute to the enhanced profile including an improvement in reducing band offset of the Group III-V deposited layers improving carrier density through a decrease in the voltage drop require to generate carrier flow; reduction of contaminants in the growth of Group III-V AlGaInP-containing layers with compositional Al, providing for quality material necessary to achieve operation at the desired visible wavelengths; the formation of an optical resonator cavity that provides, in part, weak waveguiding of the propagating light; and the utilization of a mechanism to provide for beam spreading and filing in a beam diverging gain section prior to actively aggressive gain pumping of the propagating light in the device.

Abstract: Methods and apparatus for film measurement and endpoint detection in a noisy environment, such as CMP processing of semiconductor wafers, are disclosed, characterized by the use of spectral analysis of intensity data derived from light reflected off the sample to estimate film thickness or detect an endpoint condition.

Abstract: A Group III-V semiconductor optoelectronic device provides for visible wavelength light output having a more laterally uniform, high power beam profile, albeit still quasi-Gaussian. A number of factors contribute to the enhanced profile including an improvement in reducing band offset of the Group III-V deposited layers improving carrier density through a decrease in the voltage drop require to generate carrier flow; reduction of contaminants in the growth of Group III-V AlGaInP-containing layers with compositional Al, providing for quality material necessary to achieve operation at the desired visible wavelengths; the formation of an optical resonator cavity that provides, in part, weak waveguiding of the propagating light; and the utilization of a mechanism to provide for beam spreading and filing in a beam diverging gain section prior to actively aggressive gain pumping of the propagating light in the device.