Abstract: A sensor apparatus for measuring a plasma process parameter for processing a workpiece. The sensor apparatus includes a base, an information processor supported on or in the base, and at least one sensor supported on or in the base. The at least one sensor includes at least one sensing element configured for measuring an electrical property of a plasma and may include a transducer coupled to the at least one sensing element. The transducer can be configured to receive a signal from the sensing element and convert the signal into a second signal for input to the information processor.

Abstract: A sensor apparatus for measuring a plasma process parameter for processing a workpiece. The sensor apparatus includes a base, an information processor supported on or in the base, and at least one sensor supported on or in the base. The at least one sensor includes at least one sensing element configured for measuring an electrical property of a plasma and may include a transducer coupled to the at least one sensing element. The transducer can be configured to receive a signal from the sensing element and convert the signal into a second signal for input to the information processor.

Abstract: A sensor apparatus for measuring a plasma process parameter for processing a workpiece. The sensor apparatus includes a base, an information processor supported on or in the base, and at least one sensor supported on or in the base. The at least one sensor includes at least one sensing element configured for measuring an electrical property of a plasma and may include a transducer coupled to the at least one sensing element. The transducer can be configured to receive a signal from the sensing element and convert the signal into a second signal for input to the information processor.

Abstract: A sensor apparatus for measuring a plasma process parameter for processing a workpiece. The sensor apparatus includes a base, an information processor supported on or in the base, and at least one sensor supported on or in the base. The at least one sensor includes at least one sensing element configured for measuring an electrical property of a plasma and may include a transducer coupled to the at least one sensing element. The transducer can be configured to receive a signal from the sensing element and convert the signal into a second signal for input to the information processor.

Abstract: A sensor apparatus for measuring a plasma process parameter for processing a workpiece. The sensor apparatus includes a base, an information processor supported on or in the base, and at least one sensor supported on or in the base. The at least one sensor includes at least one sensing element configured for measuring an electrical property of a plasma and at least one transducer coupled to the at least one sensing element. The transducer is configured so as to receive a signal from the sensing element and converting the signal into a second signal for input to the information processor.

Abstract: Some problems related to processing workpieces are presented along with solutions to one or more of the problems. One embodiment of the invention comprises a sensor apparatus for collecting data representing one or more process conditions used for processing a workpiece. Another embodiment of the present invention is a combination comprising a sensor apparatus and a process tool for applications such as chemical mechanical planarization of workpieces and chemical mechanical polishing of workpieces.

Abstract: Presented are methods, systems, and apparatuses for managing and maintaining an electronic device such as a sensor apparatus.

Abstract: One or more problems related to processing workpieces using processes that involve optical radiation are presented along with solutions to one or more of the problems. One embodiment of the invention comprises a sensor apparatus for collecting optical radiation data representing one or more process conditions used for processing a workpiece. In a further embodiment, the sensor apparatus is also configured for measuring data other than optical radiation.

Abstract: Presented are methods, systems, and apparatuses for managing and maintaining an electronic device such as a sensor apparatus.

Abstract: Data are collected for deriving response models and information required for developing and maintaining processes and process tools. Methods and apparatus for collecting the data include a process tolerant sensor apparatus capable of collecting data with less perturbation and fewer disruptions than is usually possible using standard methods.

Abstract: Presented are methods, systems, and apparatus for deriving heat flux information and using heat flux information for a workpiece used in temperature sensitive processes.

Abstract: A method for optically detecting a trench depth includes detecting a first maxima in an intensity of multi-wavelength light. A portion of the multi-wavelength light is reflected from a top trench surface. A second maxima in an intensity of multi-wavelength light is also detected. A portion of the multi-wavelength light is reflected from a bottom trench surface. A maxima peak separation between the first maxima and the second maxima is determined. The trench depth corresponds to the maxima peak separation.

Abstract: Presented are methods, systems, and apparatuses for managing and maintaining an electronic device such as a sensor apparatus.

Abstract: Data are collected for deriving response models and information required for developing and maintaining processes and process tools. Methods and apparatus for collecting the data include a process tolerant sensor apparatus capable of collecting data with less perturbation and fewer disruptions than is usually possible using standard methods.

Abstract: Presented are methods, systems, and apparatus for deriving heat flux information and using heat flux information for a workpiece used in temperature sensitive processes.

Abstract: A method of detecting fire ignition sources includes using an electronic temperature sensor to probe potential ignition sites. The fire hazards for the sites are determined based on at least one of measurements of temperatures at or near the site, measurements of rate of temperature rise at or near the site, and measurements of temperature gradients at or near the site. Apparatus for performing the method is also described.

Abstract: Data are collected for deriving response models and information required for developing and maintaining processes and process tools. Methods and apparatus for collecting the data include a sensor apparatus capable of collecting data with less perturbation and fewer disruptions than is usually possible using standard methods. The sensor apparatus is capable of being loaded into a process tool. From within the process tool, the sensor apparatus is capable of measuring data, processing data, storing data, and transmitting data. The sensor apparatus has capabilities for near real time data collection and communication.

Abstract: A method for optically detecting a trench depth includes detecting a first maxima in an intensity of multi-wavelength light. A portion of the multi-wavelength light is reflected from a top trench surface. A second maxima in an intensity of multi-wavelength light is also detected. A portion of the multi-wavelength light is reflected from a bottom trench surface. A maxima peak separation between the first maxima and the second maxima is determined. The trench depth corresponds to the maxima peak separation.

Abstract: Apparatus characterizes the quality of microelectronic features using broadband white light. A highly collimated light source illuminates an area of a first wafer using broadband multi-spectral light. The angular distribution of the light scattered from the first wafer is then measured. Generally, the angle of the light source, detector, or both is altered and an angular distribution measurement taken at each angle, producing a scatter signature for the first wafer. Finally, the scatter signature of the first wafer is compared with a known scatter signature of a second wafer of good quality to determine the quality of the first wafer.

Abstract: An inventive method for optically detecting a trench depth in a wafer is disclosed. The method includes detecting a first maxima in the intensity of a multi-wavelength light source, a portion of the light being reflected from the top trench surface of a wafer. A second maxima is then detected in the intensity of the multi-wavelength light source, a portion of which being reflected from the bottom trench surface of a wafer. The method further includes determining a maxima peak difference between the first maxima and the second maxima, wherein the trench depth corresponds to the maxima peak separation. The invention provides a robust, cost effective method for trench depth detection.