Patents by Inventor Randhir P. Singh Thakur

Randhir P. Singh Thakur has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Silicon nitride film with stress control
    Patent number: 7488690
    Abstract: An assembly comprises a multilayer nitride stack having nitride etch stop layers formed on top of one another, each of the nitride etch stop layers is formed using a film forming process. A method of making the multilayer nitride stack includes placing a substrate in a single wafer deposition chamber and thermally shocking the substrate momentarily prior to deposition. A first nitride etch stop layer is deposited over the substrate. A second nitride etch stop layer is deposited over the first nitride etch stop layer.
    Type: Grant
    Filed: July 6, 2004
    Date of Patent: February 10, 2009
    Assignee: Applied Materials, Inc.
    Inventors: R. Suryanarayanan Iyer, Andrew M. Lam, Yuji Maeda, Thomas Mele, Jacob W. Smith, Sean M. Seutter, Sanjeev Tandon, Randhir P. Singh Thakur, Sunderraj Thirupapuliyur
  • Methods for forming silicon comprising films using hexachlorodisilane in a single-wafer deposion chamber
    Patent number: 6884464
    Abstract: A silicon comprising film and its method of fabrication is described. The silicon comprising film is grown on a substrate. A hexachlorodisilane (HCD) source gas is one of the reactant species used to form the silicon comprising film. The silicon comprising film is formed under a pressure between 10 Torr and 350 Torr.
    Type: Grant
    Filed: November 4, 2002
    Date of Patent: April 26, 2005
    Assignee: Applied Materials, Inc.
    Inventors: Lee Luo, R. Suryanarayanan Iyer, Janardhanan Anand Subramony, Errol Antonio C. Sanchez, Xiaoliang Jin, Aihua Chen, Chang-Lian Yan, Nobuo Tokai, Yuji Maeda, Randhir P. Singh Thakur
  • Methods for forming silicon comprising films using hexachlorodisilane in a single-wafer deposion chamber
    Publication number: 20040086640
    Abstract: A silicon comprising film and its method of fabrication is described. The silicon comprising film is grown on a substrate. A hexachlorodisilane (HCD) source gas is one of the reactant species used to form the silicon comprising film. The silicon comprising film is formed under a pressure between 10 Torr and 350 Torr.
    Type: Application
    Filed: November 4, 2002
    Publication date: May 6, 2004
    Applicant: Applied Materials, Inc.
    Inventors: Lee Luo, R. Suryanarayanan Iyer, Janardhanan Anand Subramony, Errol Antonio C. Sanchez, Xiaoliang Jin, Aihua Steven Chen, Chang-Lian Yan, Nobuo Tokai, Yuji Maeda, Randhir P. Singh Thakur
  • Cycling deposition of low temperature films in a cold wall single wafer process chamber
    Publication number: 20030059535
    Abstract: A method for film deposition that includes, flowing a first reactive gas over a top surface of a wafer in a cold wall single wafer process chamber to form a first half-layer of the film on the wafer, stopping the flow of the first reactive gas, removing residual first reactive gas from the cold wall single wafer process chamber, flowing a second reactive gas over the first half-layer to form a second half-layer of the film where deposition of the second half-layer is non self-limiting, controlling a thickness of the second half-layer by regulating process parameters within the cold wall single wafer process chamber, stopping the flow of the second reactive gas; and removing residual second reactive gas from the cold wall single wafer process chamber.
    Type: Application
    Filed: September 25, 2001
    Publication date: March 27, 2003
    Inventors: Lee Luo, Sang Hoon Ahn, Aihua Chen, Ramaseshan Suryanarayanan Iyer, Shulin Wang, Randhir P. Singh Thakur