Abstract: A method of fabricating a silicon-on-insulator structure having a silicon surface layer in a semiconductor workpiece, is carried out by maintaining the workpiece at an elevated temperature and producing an oxygen-containing plasma in the chamber while applying a bias to the workpiece and setting the bias to a level corresponding to an implant depth in the workpiece below the silicon surface layer to which oxygen atoms are to be implanted, whereby to form an oxygen-implanted layer in the workpiece having an oxygen concentration distribution generally centered at the implant depth and having a finite oxygen concentration in the silicon surface layer. The oxygen concentration in the silicon surface layer is then reduced to permit epitaxial silicon deposition.

Abstract: A method of fabricating a silicon-on-insulator structure having a silicon surface layer in a semiconductor workpiece, is carried out by maintaining the workpiece at an elevated temperature and producing an oxygen-containing plasma in the chamber while applying a bias to the workpiece and setting the bias to a level corresponding to an implant depth in the workpiece below the silicon surface layer to which oxygen atoms are to be implanted, whereby to form an oxygen-implanted layer in the workpiece having an oxygen concentration distribution generally centered at the implant depth and having a finite oxygen concentration in the silicon surface layer. The oxygen concentration in the silicon surface layer is then reduced to permit epitaxial silicon deposition.

Abstract: Titanium boride (TiBx), zirconium boride (ZrBx) and hafnium boride (HfBx) barriers and electrodes for cell dielectrics for integrated circuits, particularly for DRAM cell capacitors. The barriers protect cell dielectrics from diffusion and other interaction with surrounding materials during subsequent thermal processing.

Abstract: A method for fabricating semiconductors is provided in which a conformal layer is formed superjacent at least two conductive layers. The conformal layer has a thickness of at least 50 .ANG.. A barrier layer is then formed superjacent the conformal layer to prevent subsequent layers from diffusing into active regions. The barrier layer is preferably Si.sub.3 N.sub.4. A glass layer is then formed superjacent the barrier layer. The glass layer has a thickness of at least 1 k.ANG.. The glass layer is heated to a temperature of at least 800.degree. C. for at least 15 minutes while introducing H.sub.2 and O.sub.2 at a high temperature to cause vaporization, thereby causing the glass layer to reflow. Next, the glass layer is exposed to a gas and radiant energy for 5 to 60 seconds, thereby making said glass layer planar. The radiant energy generates a temperature within the range of 700.degree. C. to 1250.degree. C. Further, the gas is at least one of N.sub.2, NH.sub.3, O.sub.2, N.sub.2 O, Ar, Ar-H.sub.2, H.sub.