Abstract: A photonic integrated circuit and a method for its manufacture are provided. In an embodiment, an intermetal dielectric layer, for example, a silicon oxide layer, is contiguous between an upper metal layer and a lower metal layer on a substrate. One or more waveguides having top and bottom faces are formed in respective waveguide layers within the intermetal dielectric layer between the upper and lower metal layers. There is a distance of at least 600 nm from the upper metal layer to the top face of the uppermost of the several waveguides. There is a distance of at least 600 nm from the lower metal layer to the bottom face of the lowermost of the several waveguides. The waveguides are formed of silicon nitride for longer wavelengths and alumina for shorter wavelengths. These dimensions and materials are favorable for CMOS processing, among other things.

Abstract: In disclosed apparatus, a plurality of optical waveguides monolithically integrated on a surface ion trap substrate deliver light to the trapping sites. Electrical routing traces defined in one or more metallization levels deliver electrical signals to electrodes of the surface electrode ion trap. A plurality of photodetectors are integrated on the substrate and arranged to detect light from respective trapping sites.

Abstract: A method is provided for fabricating a backside-illuminated photodetector in which a device wafer is joined to a readout wafer in an IC hybridization step. Before the IC hybridization step, the device layer is defined in the device wafer, and an LPCVD layer is formed over the device layer. The LPCVD layer may be a passivation layer, an antireflection coating, or both. The side of the device wafer having the LPCVD layer is bonded to a handle wafer, the IC is hybridized by mating the device wafer to the readout wafer, and the handle wafer is then removed, exposing the LPCVD layer. Because the LPCVD layer is formed before the active devices are fabricated, it can be made by high-temperature techniques for deposition and processing. Accordingly, a layer of high quality can be fabricated without any hazard to the active devices.

Abstract: Apparatus for detecting radiation includes a sensor medium disposed within a cavity in a silicon-based substrate. An electrode arrangement is provided for collecting charge generated within the sensor medium by interactions with impinging radiation and drifted through the sensor medium. The electrode arrangement is constituted, in part, by a silicon portion of the substrate that is doped to increase its electrical conductivity and that defines part of the cavity wall.

Abstract: An apparatus for detecting radiation is provided. In embodiments, at least one sensor is disposed on a surface of a wafer-like substrate. At least one sensor medium is fixed relative to the substrate, optically or electrically coupled to the sensor, and separated from the sensor by no more than the substrate thickness. An electronic signal-processing circuit is connected to the sensor and configured to produce an output when the sensor is stimulated by a product of an interaction between the sensor medium and impinging radiation. The sensor is configured to collect, from the sensor medium, charge and/or light produced within the sensor medium by interactions with impinging radiation.

Abstract: Technologies pertaining to focal plane arrays (FPAs) are disclosed herein. In a general embodiment, the FPA includes a detector layer and a stack of discrete processing layers, where the stack of discrete processing layers is hybridized with the detector layer. The processing layers are each configured to perform a respective function. At least one processing layer includes multiple identical tiles, where each tile is configured to perform an identical function.

Abstract: An apparatus for detecting radiation is provided. In embodiments, at least one sensor medium is provided, of a kind that interacts with radiation to generate photons and/or charge carriers. The apparatus also includes at least one electrode arrangement configured to collect radiation-generated charge from a sensor medium that has been provided. The apparatus also includes at least one photodetector configured to produce an electrical output in response to photons generated by radiation in such a sensor medium, and an electronic circuit configured to produce an output that is jointly responsive to the collected charge and to the photodetector output. At least one such electrode arrangement, at least one such photodetector, and at least one such sensor medium are combined to form an integral unit.

Abstract: A modular, scalable focal plane array is provided as an array of integrated circuit dice, wherein each die includes a given amount of modular pixel array circuitry. The array of dice effectively multiplies the amount of modular pixel array circuitry to produce a larger pixel array without increasing die size. Desired pixel pitch across the enlarged pixel array is preserved by forming die stacks with each pixel array circuitry die stacked on a separate die that contains the corresponding signal processing circuitry. Techniques for die stack interconnections and die stack placement are implemented to ensure that the desired pixel pitch is preserved across the enlarged pixel array.

Abstract: An electronic device includes a memory configured to receive data representing light intensity values from pixels in a focal plane array and a processor that analyzes the received data to determine which light values correspond to triggered pixels, where the triggered pixels are those pixels that meet a predefined set of criteria, and determines, for each triggered pixel, a set of neighbor pixels for which light intensity values are to be stored. The electronic device also includes a buffer that temporarily stores light intensity values for at least one previously processed row of pixels, so that when a triggered pixel is identified in a current row, light intensity values for the neighbor pixels in the previously processed row and for the triggered pixel are persistently stored, as well as a data transmitter that transmits the persistently stored light intensity values for the triggered and neighbor pixels to a data receiver.