Patents by Inventor Randy Hsiao

Randy Hsiao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7269521
    Abstract: The methodology includes a single excitation analysis, a multi-excitation analysis, and a simultaneous switch noise, SSN, analysis. A chip connects to the PDS at a plurality of power ports formed by pads for obtaining biasing voltage and current from those power ports. The single excitation analysis includes respectively making each of power ports start conducting current, and measuring a voltage provided by the power port. An equivalent impedance of each power port is obtained. The multi-excitation analysis includes making a given power port conduct a given current, and measuring voltages at other power ports for evaluating mutual couplings across different power ports. The SSN analysis includes respectively making different numbers of power ports conduct currents and accordingly evaluating different equivalent impedances corresponding to different SSN situations.
    Type: Grant
    Filed: July 25, 2006
    Date of Patent: September 11, 2007
    Assignee: VIA Technologies Inc.
    Inventors: Jimmy Hsu, Randy Hsiao
  • Publication number: 20070040535
    Abstract: The methodology includes a single excitation analysis, a multi-excitation analysis, and a simultaneous switch noise, SSN, analysis. A chip connects to the PDS at a plurality of power ports formed by pads for obtaining biasing voltage and current from those power ports. The single excitation analysis includes respectively making each of power ports start conducting current, and measuring a voltage provided by the power port. An equivalent impedance of each power port is obtained. The multi-excitation analysis includes making a given power port conduct a given current, and measuring voltages at other power ports for evaluating mutual couplings across different power ports. The SSN analysis includes respectively making different numbers of power ports conduct currents and accordingly evaluating different equivalent impedances corresponding to different SSN situations.
    Type: Application
    Filed: July 25, 2006
    Publication date: February 22, 2007
    Inventors: Jimmy Hsu, Randy Hsiao
  • Patent number: 6166435
    Abstract: An extended flip chip ball grid array package includes a metal heat slug bonded to the surface of a semiconductor chip. The heat slug has a bonding structure for connecting itself and a BGA substrate panel on which the semiconductor chip is mounted. The heat slug protects the chip from being damaged as well as assists heat dissipation. A first package assembly provides contact bodies on the heat slug for bonding the heat slug to contact pads formed on a BGA substrate panel. A second package assembly fixes the heat slug to a supporting structure bonded on a BGA substrate panel. Supporting stubs are formed on the supporting structure and snapped in openings formed on the contact bodies of the heat slug. Conventional packaging or testing equipment can be used for both package assemblies to manufacture or test the semiconductor chip packages.
    Type: Grant
    Filed: December 10, 1998
    Date of Patent: December 26, 2000
    Assignee: Industrial Technology Research Institute
    Inventors: Fang-Jun Leu, Rong-Shen Lee, Hsin-Chien Huang, Randy Hsiao-Yu Lo, Chiang-Han Day
  • Patent number: 5891760
    Abstract: A lead frame having protection against electrostatic discharge is disclosed. The lead frame having protection against electrostatic discharge includes a multiplicity of leads and an electrostatic discharge protection device. The electrostatic discharge protection device includes a conductive layer and a protection layer. The protection layer is arranged to contact a plurality of leads and is formed from an electrostatic discharge protection material, which insulates the leads from the conductive layer at voltages below a predefined threshold voltage and establishes an electrical connection between the leads and the conductive layer at voltages above the threshold voltage.
    Type: Grant
    Filed: March 25, 1998
    Date of Patent: April 6, 1999
    Assignee: National Semiconductor Corporation
    Inventors: Boonmi Mekdhanasarn, Randy Hsiao-Yu Lo
  • Patent number: 5796570
    Abstract: Described is a circuit board having protection against electrostatic discharge. The board includes a plurality of interconnect traces and an electrically conductive ground plane formed on a substrate such that a gap is created between the interconnect traces and the ground plane. A resistive electrostatic discharge protection material is positioned to bridge the gaps between the ground plane and the interconnect traces, such that the electrostatic discharge protection material electrically insulates the interconnect traces from the ground plane at voltages below a predefined threshold voltage and establishes an electrical connection between the interconnect traces and the conductive plane at voltages above the threshold voltage. A process of manufacturing the circuit board includes forming interconnect traces and a ground plane such that there is a gap between the ground plane and the interconnect traces.
    Type: Grant
    Filed: September 19, 1996
    Date of Patent: August 18, 1998
    Assignee: National Semiconductor Corporation
    Inventors: Boonmi Mekdhanasarn, Randy Hsiao-Yu Lo, Steve M. Ichikawa, Abdul Rahim Ahmed
  • Patent number: 5773876
    Abstract: A lead frame having protection against electrostatic discharge is disclosed. The lead frame having protection against electrostatic discharge includes a multiplicity of leads and an electrostatic discharge protection device. The electrostatic discharge protection device includes a conductive layer and a protection layer. The protection layer is arranged to contact a plurality of leads and is formed from an electrostatic discharge protection material, which insulates the leads from the conductive layer at voltages below a predefined threshold voltage and establishes an electrical connection between the leads and the conductive layer at voltages above the threshold voltage.
    Type: Grant
    Filed: November 6, 1996
    Date of Patent: June 30, 1998
    Assignee: National Semiconductor Corporation
    Inventors: Boonmi Mekdhanasarn, Randy Hsiao-Yu Lo