Abstract: Multiple solid precursor bubblers are used to alleviate channeling effects caused by high carrying gas flow rates to provide for deposition of indium-based epitaxial materials in high-capacity MOCVD reactor systems. Precracking of precursor materials that exhibit higher dissociation temperatures using heated manifolds or heated susceptor, and rotation of individual wafers in a multi-wafer reactor chamber enhance thickness uniformity, surface morphology and electronic properties of deposited epitaxial layers.

Abstract: A cone-shaped bubbler for use with solid metal organic source material used in metal organic chemical vapor phase deposition systems, and a method of producing carrying gas saturated with source material that is injected into such systems. The bubbler comprises a sealed container having a slanted wall with an inverted cone-shaped cross section. Solid metal organic source material is disposed in the container. A heat bath surrounds the sealed container. A carrying gas inlet is disposed adjacent the top of the container. Carrying gas is injected in a tangential direction relative to the source material, and a whirlpool effect is generated by the tangential gas flow that imparts a centrifugal force to gas molecules, pushing the source material against the wall to promote heat flow from the heat bath to sustain high rate sublimation. A gas outlet is disposed adjacent the bottom of the container.

Abstract: Outgassed materials liberated in spaces between pointed field emitter tips and an electrode structure during electrical operation of a field emitter device are vented through passageways to a pump or gettering material provided in a separate space. The passageways may include channels formed through an insulating layer between a base for the field emitters, and the electrode structure, with the channels interconnecting adjacent spaces in a row direction. Where the electrode structure includes a gate electrode layer and an anode layer, similar channels may be formed through an insulator layer provided therebetween. The field emitters may be formed in an arrangement of rows and columns, with the spacing between the columns smaller than the spacing between the rows. Holes are formed by anisotropic etching through the anode, gate electrode, and insulator layers down to the base.

Abstract: Outgassed materials liberated in spaces between pointed field emitter tips and an electrode structure during electrical operation of a field emitter device are vented through passageways to a pump of gettering material provided in a separate space. The passageways may include channels formed through an insulating layer between a base for the field emitters, and the electrode structure, with the channels interconnecting adjacent spaces in a row direction. Where the electrode structure includes a gate electrode layer and an anode layer, similar channels may be formed through an insulator layer provided therebetween. The field emitters may be formed in an arrangement of rows and columns, with the spacing between the columns smaller than the spacing between the rows.

Abstract: Conical field emitter elements are formed on a surface of a substrate after which a layer of metal is deposited on top of the substrate surface and over the field emitter elements. A layer of oxide is then deposited over the metal layer. Another layer of metal is deposited over the layer of oxide to form a gate metal layer. A layer of photoresist is then deposited over the gate metal layer. The layer of photoresist is then plasma etched in an oxygen atmosphere to cause portions of the photoresist above respective field emitter elements to be removed and provide self-aligned holes in the photoresist over each of the field emitter elements. The size of the holes may be controlled by appropriately controlling process parameter, including plasma etching time and power and/or initial photoresist thickness. The exposed gate metal layer is etched using the layer of photoresist as a mask. The photoresist layer is removed, and the layer of oxide is etched to expose the field emitter elements.