Abstract: A method of selectively fabricating metallization on a dielectric substrate is disclosed. A seed layer is sputtered on a polymer dielectric, a patterned photoresist mask is disposed over the seed layer, exposed portions of the seed layer are etched, the photoresist is stripped, and copper is deposited without a mask by electroless plating on the unetched seed layer to form well-adhering high density copper lines without exposing the photoresist to the electroless bath.

Abstract: Compliant electrically connection bumps for an adhesive flip chip integrated circuit device and various methods for forming the bumps include the steps of forming polymer bumps on a substrate or an integrated circuit die and coating the polymer bumps with a metallization layer. The polymer bump forming step includes the steps of coating a polymer material on a substrate, curing the polymer and the etching the bump pattern from the polymer material. The overcoating step includes electrolessly plating a ductile metal such as gold on the polymer bump.

Abstract: A method for detecting the completion of electrolessly depositing metal into a via. The method includes providing a non-autocatalytic detection mask with an opening over a via containing an autocatalytic material, electrolessly depositing a conductive metal into the via which fails to plate to the mask, and continuing the deposition until metal in the via contacts the mask, at which time the electrochemical potential of the mask changes and the metal plates to and covers the entire mask. The completion of the electroless via fill can be detected by changes in both the appearance and electrochemical potential of the mask.