Abstract: A concrete stamping system is provided, comprising: a base plate; a handle mounted to the base plate; a vibrator secured to a top of the base plate; and a roller attachment secured to a bottom of the base plate. The roller attachment comprises: a frame; and a plurality of parallel rollers mounted on axles extending across the frame and secured within the frame. When the vibrator is activated, vibrations generated by the vibrator are transmitted through the base plate, through the rollers, and into a stamping mat between the rollers and fresh concrete. The system is rollable across the stamping map by an operator.

Abstract: A removable valve socket wrench for installing and removing pipe valves. The socket may be attached to an end of a ratchet, torque wrench, T-bar, or breaker bar with an extendable wrench handle. A detent feature is provided to allow the socket to positively engage the handle and be physically retained yet removable. The socket features various openings in the socket walls to engage with protruding features of a particular valve.

Abstract: A semiconductor memory device includes an array of storage cells, each cell having a transfer transistor with a gate electrode. A separate wordline 32 interconnects the gate electrodes of each row of the storage cells. A first conductive layer includes stripes 38, each stripe overlying a different row of the storage cells and connecting to the wordline and the gate electrodes of the storage cells of a different odd numbered row of the storage cells. An insulator surrounds the stripes of the first conductive layer. A second conductive layer, separated from the stripes of the first conductive layer by the insulator, includes stripes 39, each stripe of the second conductive layer overlying a different even numbered row of storage cells and connecting to the wordline and the gate electrodes of the different even numbered row of storage cells.

Abstract: The described embodiments of the present invention provide DRAM cells, structures and manufacturing methods. A DRAM cell with a trench capacitor having a first plate formed as a diffusion on the outside surface of a trench formed in the substrate and a second plate having a conductive region formed inside the trench is fabricated. The transfer transistor is formed using a field plate isolation structure which includes a self-aligned moat area for the transfer transistor. The moat area slightly overlaps the capacitor area and allows for increased misalignment tolerance thus foregoing the requirement for misalignment tolerances built into the layout of the DRAM cell. The field plate itself is etched so that it has sloped sidewalls to avoid the formation of conductive filaments from subsequent conductive layers formed on the integrated circuit.

Abstract: The described embodiments of the present invention provide DRAM cells, structures and manufaturing methods. In a first embodiment, a DRAM cell with a trench capacitor having a first plate formed as a diffusion on the outside surface of a trench formed in the substrate and a second plate having a conductive region formed inside the trench is fabricated. The transfer transistor is formed using a field plate isolation structure which includes a self-aligned moat area for the transfer transistor. The moat area slightly overlaps the capacitor area and allows for increased misalignment tolerance thus foregoing the requirement for misalignment tolerances built into the layout of the DRAM cell. The field plate itself is etched so that it has sloped sidewalls to avoid the formation of conductive filaments from subsequent conductive layers formed on the integrated circuit.