Patents by Inventor Randy Wayne Simon

Randy Wayne Simon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6610633
    Abstract: A lanthanum aluminate (LaAlO3) substrate on which thin films of layered perovskite copper oxide superconductors are formed. Lanthanum aluminate, with a pseudo-cubic perovskite crystal structure, has a crystal structure and lattice constant that closely match the crystal structures and lattice constants of the layered perovskite superconductors. Therefore, it promotes epitaxial film growth of the superconductors, with the crystals being oriented in the proper direction for good superconductive electrical properties, such as a high critical current density. In addition, LaAlO3 has good high frequency properties, such as a low loss tangent and low dielectric constant at superconductive temperatures. Finally, lanthanum aluminate does not significantly interact with the superconductors. Lanthanum aluminate can also be used to form thin insulating films between the superconductor layers, which allows for the fabrication of a wide variety of superconductor circuit elements.
    Type: Grant
    Filed: May 4, 1995
    Date of Patent: August 26, 2003
    Assignee: TRW Inc.
    Inventors: Randy Wayne Simon, Christine Elizabeth Platt, Alfred Euinam Lee, Gregory Steven Lee
  • Patent number: 6337149
    Abstract: A lanthanum aluminate (LaAlO3) substrate on which thin films of layered perovskite copper oxide superconductors are formed. Lanthanum aluminate, with a pseudo-cubic perovskite crystal structure, has a crystal structure and lattice constant that closely match the crystal structures and lattice constants of the layered perovskite superconductors. Therefore, it promotes epitaxial film growth of the superconductors, with the crystals being oriented in the proper direction for good superconductive electrical properties, such as a high critical current density. In addition, LaAlO3 has good high frequency properties, such as a low loss tangent and low dielectric constant at superconductive temperatures. Finally, lanthanum aluminate does not significantly interact with the superconductors. Lanthanum aluminate can also be used to form thin insulating films between the superconductor layers, which allows for the fabrication of a wide variety of superconductor circuit elements.
    Type: Grant
    Filed: September 19, 1994
    Date of Patent: January 8, 2002
    Assignee: TRW Inc.
    Inventors: Randy Wayne Simon, Christine Elizabeth Platt, Alfred Euinam Lee, Gregory Steven Lee
  • Patent number: 6326334
    Abstract: A lanthanum aluminate (LaAlO3) substrate on which thin films of layered perovskite copper oxide superconductors are formed. Lanthanum aluminate, with a pseudo-cubic perovskite crystal structure, has a crystal structure and lattice constant that closely match the crystal structures and lattice constants of the layered perovskite superconductors. Therefore, it promotes epitaxial film growth of the superconductors, with the crystals being oriented in the proper direction for good superconductive electrical properties, such as a high critical current density. In addition, LaAlO3 has good high frequency properties, such as a low loss tangent and low dielectric constant at superconductive temperatures. Finally, lanthanum aluminate does not significantly interact with the superconductors. Lanthanum aluminate can also be used to form thin insulating films between the superconductor layers, which allows for the fabrication of a wide variety of superconductor circuit elements.
    Type: Grant
    Filed: November 21, 1994
    Date of Patent: December 4, 2001
    Assignee: TRW Inc.
    Inventors: Randy Wayne Simon, Christine Elizabeth Platt, Alfred Euinam Lee, Gregory Steven Lee
  • Patent number: 6324413
    Abstract: A lanthanum aluminate (LaAlO3) substrate on which thin films of layered perovskite copper oxide superconductors are formed. Lanthanum aluminate, with a pseudo-cubic perovskite crystal structure, has a crystal structure and lattice constant that closely match the crystal structures and lattice constants of the layered perovskite superconductors. Therefore, it promotes epitaxial film growth of the superconductors, with the crystals being oriented in the proper direction for good superconductive electrical properties, such as a high critical current density. In addition, LaAlO3 has good high frequency properties, such as a low loss tangent and low dielectric constant at superconductive temperatures. Finally, lanthanum aluminate does not significantly interact with the superconductors. Lanthanum aluminate can also used to form thin insulating films between the superconductor layers, which allows for the fabrication of a wide variety of superconductor circuit elements.
    Type: Grant
    Filed: December 9, 1991
    Date of Patent: November 27, 2001
    Assignee: TRW Inc.
    Inventors: Randy Wayne Simon, Christine Elizabeth Platt, Alfred Euinam Lee, Gregory Steven Lee
  • Patent number: 6297200
    Abstract: A lanthanum aluminate (LaAlO3) substrate on which thin films of layered perovskite copper oxide superconductors are formed. Lanthanum aluminate, with a pseudo-cubic perovskite crystal structure, has a crystal structure and lattice constant that closely match the crystal structures and lattice constants of the layered perovskite superconductors. Therefore, it promotes epitaxial film growth of the superconductors, with the crystals being oriented in the proper direction for good superconductive electrical properties, such as a high critical current density. In addition, LaAlO3 has good high frequency properties, such as a low loss tangent and low dielectric constant at superconductive temperatures. Finally, lanthanum aluminate does not significantly interact with the superconductors. Lanthanum aluminate can also used to form thin insulating films between the superconductor layers, which allows for the fabrication of a wide variety of superconductor circuit elements.
    Type: Grant
    Filed: October 18, 1999
    Date of Patent: October 2, 2001
    Assignee: TRW Inc.
    Inventors: Randy Wayne Simon, Christine Elizabeth Platt, Alfred Euinam Lee, Gregory Steven Lee
  • Patent number: 6117824
    Abstract: A lanthanum aluminate (LaAlO.sub.3) substrate on which thin films of layered perovskite copper oxide superconductors are formed. Lanthanum aluminate, with a pseudo-cubic perovskite crystal structure, has a crystal structure and lattice constant that closely match the crystal structures and lattice constants of the layered perovskite superconductors. Therefore, it promotes epitaxial film growth of the superconductors, with the crystals being oriented in the proper direction for good superconductive electrical properties, such as a high critical current density. In addition, LaAlO.sub.3 has good high frequency properties, such as a low loss tangent and low dielectric constant at superconductive temperatures. Finally, lanthanum aluminate does not significantly interact with the superconductors. Lanthanum aluminate can also used to form thin insulating films between the superconductor layers, which allows for the fabrication of a wide variety of superconductor circuit elements.
    Type: Grant
    Filed: January 9, 1995
    Date of Patent: September 12, 2000
    Assignee: TRW Inc.
    Inventors: Randy Wayne Simon, Christine Elizabeth Platt, Alfred Euinam Lee, Gregory Steven Lee
  • Patent number: 5906963
    Abstract: A lanthanum aluminate (LaAlO.sub.3) substrate on which thin films of layered perovskite copper oxide superconductors are formed. Lanthanum aluminate, with a pseudo-cubic perovskite crystal structure, has a crystal structure and lattice constant that closely match the crystal structures and lattice constants of the layered perovskite superconductors. Therefore, it promotes epitaxial film growth of the superconductors, with the crystals being oriented in the proper direction for good superconductive electrical properties, such as a high critical current density. In addition, LaAlO.sub.3 has good high frequency properties, such as a low loss tangent and low dielectric constant at superconductive temperatures. Finally, lanthanum aluminate does not significantly interact with the superconductors. Lanthanum aluminate can also used to form thin insulating films between the superconductor layers, which allows for the fabrication of a wide variety of superconductor circuit elements.
    Type: Grant
    Filed: May 24, 1996
    Date of Patent: May 25, 1999
    Assignee: TRW Inc.
    Inventors: Randy Wayne Simon, Christine Elizabeth Platt, Alfred Euinam Lee, Gregory Steven Lee
  • Patent number: 5849673
    Abstract: A lanthanum aluminate (LaAlO.sub.3) substrate on which thin films of layered perovskite copper oxide superconductors are formed. Lanthanum aluminate, with a pseudo-cubic perovskite crystal structure, has a crystal structure and lattice constant that closely match the crystal structures and lattice constants of the layered perovskite superconductors. Therefore, it promotes epitaxial film growth of the superconductors, with the crystals being oriented in the proper direction for good superconductive electrical properties, such as a high critical current density. In addition, LaAlO.sub.3 has good high frequency properties, such as a low loss tangent and low dielectric constant at superconductive temperatures. Finally, lanthanum aluminate does not significantly interact with the superconductors. Lanthanum aluminate can also be used to form thin insulating films between the superconductor layers, which allows for the fabrication of a wide variety of superconductor circuit elements.
    Type: Grant
    Filed: November 7, 1994
    Date of Patent: December 15, 1998
    Assignee: TRW Inc.
    Inventors: Randy Wayne Simon, Christine Elizabeth Platt, Alfred Euinam Lee, Gregory Steven Lee