Patents by Inventor Ranick K.M. Ng

Ranick K.M. Ng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • STATIC RANDOM ACCESS MEMORY CELL
    Publication number: 20090073746
    Abstract: A static random access memory means is provided. The SRAM memory means comprises a first pass-gate FET (T6) which is coupled between a first node (A) and a bitline-bar (BLB). A second pass-gate FET (T1) is coupled between a second node (B) and a bitline (BL). The second node (B) is coupled to the first pass-gate FET (T6) and the first pass-gate FET (T6) is switched according to the voltage (VB) at the second node (B). The first node (A) is coupled to the second pass-gate FET (T1). The second pass-gate FET (T1) is switched according to the voltage (VA) on the first node (A).
    Type: Application
    Filed: April 19, 2007
    Publication date: March 19, 2009
    Applicant: NXP B.V.
    Inventors: Ranick K.M. Ng, Gerben Doornbos, Radu Surdeanu