Abstract: Novel optical devices, which are referred to as composite prisms in this document, have been designed, produced and tested. They have the potential to be useful for a number of vision related applications. For high prism diopter (15 prism diopters or more), composite prisms have resulted in thinner, lighter and lower aberration optical devices than the standard ophthalmic prisms currently in use. They also offer significantly better optical quality than the Fresnel press-on prisms which are also used to correct several ophthalmic disorders.

Abstract: Novel optical devices, which are referred to as composite prisms in this document, have been designed, produced and tested. They have the potential to be useful for a number of vision related applications. For high prism diopter (15 prism diopters or more), composite prisms have resulted in thinner, lighter and lower aberration optical devices than the standard ophthalmic prisms currently in use. They also offer significantly better optical quality than the Fresnel press-on prisms which are also used to correct several ophthalmic disorders.

Abstract: The invention is directed to method for making a dielectrically isolated metal base transistors and permeable base transistors. The first step is the production of a silicon/metal silicide/silicon heterostructure. Thereafter the surface of the heterostructure is oxidized so as to provide a bonding surface. A second silicon substrate has its surface oxidized and is bonded to the heterostructure. The surface of the heterostructure is then etched back so as to expose individual transistors which are disposed on the oxidized surface of the second substrate. With suitable processing of the metal silicide layer it may act as the base region for a metal base or permeable base transistor.

Abstract: A structure comprising thin defect-free monocrystalline layer of a silicon of an insulating layer is produced from a structure comprising a thin recrystallizable layer of silicon on an insulating layer by use of a low softening point insulating layer, scanning the structure relative to a zone heater the beams of which are focused on the recrystallizable silicon layer so as to form a melt zone having a convex solid-liquid interface in the silicon layer while forming a liquid area under the melt zone in the insulating layer.