Abstract: The present disclosure relates to methods and systems for depositing a film comprising silicon and nitrogen. More particularly, the disclosed methods and systems perform one or more deposition cycles and a radical treatment. Optionally the methods and systems perform a thermal anneal and a vacuum ultraviolet radiation.

Abstract: A method and system for depositing silicon using a multiple-chamber reactor are disclosed. An exemplary method includes performing one or more deposition cycles and performing a vacuum ultraviolet radiation, and an optional anneal.

Abstract: Disclosed are methods and systems for filing a gap. An exemplary method comprises providing a substrate in a reaction chamber. The substrate comprises at least one gap. The method further comprises depositing a layer into the gap. The layer has a first volume. Finally, the method further comprises converting the layer into a converted layer. The converted layer has a second volume. The second volume is greater than the first volume. The methods and systems are useful, for example, in the field of integrated circuit manufacture.

Abstract: The disclosure relates to methods of depositing a material comprising silicon in a gap. The method comprises providing a substrate, the substrate comprising the gap, wherein the gap comprises an inner surface and exposing the substrate to a first plasma having high ion energy to modify predetermined areas of the gap inner surface. The method further comprises exposing the substrate to a second plasma having low ion energy to passivate the modified areas of the gap surface to form passivated modified areas on the gap surface and contacting the substrate with a vapor-phase silicon precursor to chemisorb the silicon precursor on unmodified areas of the gap for depositing material comprising silicon on the unmodified areas. The current disclosure further relates to a method of controlling chemisorption of a vapor-phase silicon precursor on a substrate, and to a semiconductor processing assembly for performing the methods according to the current disclosure.

Abstract: Methods and related systems for filling a gap feature comprised in a substrate are disclosed. The methods comprise a step of providing a substrate comprising one or more gap features into a reaction chamber. The one or more gap features comprise an upper part comprising an upper surface and a lower part comprising a lower surface. The methods further comprise a step of subjecting the substrate to a plasma treatment. Thus, the upper surface is inhibited while leaving the lower surface substantially unaffected. Then, the methods comprise a step of selectively depositing a silicon-containing material on the lower surface.

Abstract: In accordance with some embodiments herein, methods and apparatuses for flowable deposition of thin films are described. Some embodiments relate to cyclical processes for gap-fill in which deposition is followed by a microwave plasma curing treatment and repeated. In some embodiments, the deposition and microwave plasma curing treatment are carried out in separate stations. In some embodiments, a second station is heated to a higher temperature than a first station. In some embodiments, a separate module is used for high temperature curing.

Abstract: Methods and related systems for at least partially filling recesses comprised in a substrate with a gap filling fluid. The gap filling fluid comprises a Si—N bond. The methods comprise exposing the substrate to a nitrogen and hydrogen-containing gas on the one hand and to vacuum ultraviolet light on the other hand.

Abstract: Methods and related systems for filling a gap feature comprised in a substrate are disclosed. The methods comprise a step of providing a substrate comprising one or more gap features into a reaction chamber. The one or more gap features comprise an upper part comprising an upper surface and a lower part comprising a lower surface. The methods further comprise a step of subjecting the substrate to a plasma treatment. Thus, the upper surface is inhibited while leaving the lower surface substantially unaffected. Then, the methods comprise a step of selectively depositing a silicon-containing material on the lower surface.