Abstract: Embodiments of the present disclosure provide a shift register unit and a driving method thereof, a gate driving circuit and a display device. The shift register unit comprises a shift register and a potential stabilizing circuit. The potential stabilizing circuit is configured to provide a signal from the reference signal terminal to the pulling-up node and the outputting signal terminal respectively, under a control of the potential stabilizing controlling terminal.

Abstract: Embodiments of the present disclosure provide a shift register unit and a driving method thereof, a gate driving circuit and a display device. The shift register unit comprises a shift register and a potential stabilizing circuit. The potential stabilizing circuit is configured to provide a signal from the reference signal terminal to the pulling-up node and the outputting signal terminal respectively, under a control of the potential stabilizing controlling terminal.

Abstract: The present disclosure provides a thin film transistor and method for repairing the same, GOA circuit and a display device, which aims to solve the problem that the source and/or drain of thin film transistor can not be repaired once it is short circuited with other conductive functional layers. The thin film transistor comprises a source, a drain, and a gate. The source and the drain have a comb shape and respectively comprise a plurality of comb-tooth portions and comb-handle portions for connecting each comb-tooth portion, and the gate is insulated from the source and the drain. Comb-tooth portions of the source are arranged by an interval with respect to comb-tooth portions of the drain. The comb-handle portion of the source and the gate do not overlap in their projections in the vertical direction, and the comb-handle portion of the drain and the gate do not overlap in their projections in the vertical direction.

Abstract: The present disclosure provides a thin film transistor and method for repairing the same, GOA circuit and a display device, which aims to solve the problem that the source and/or drain of thin film transistor can not be repaired once it is short circuited with other conductive functional layers. The thin film transistor comprises a source, a drain, and a gate. The source and the drain have a comb shape and respectively comprise a plurality of comb-tooth portions and comb-handle portions for connecting each comb-tooth portion, and the gate is insulated from the source and the drain. Comb-tooth portions of the source are arranged by an interval with respect to comb-tooth portions of the drain. The comb-handle portion of the source and the gate do not overlap in their projections in the vertical direction, and the comb-handle portion of the drain and the gate do not overlap in their projections in the vertical direction.