Abstract: The present invention relates generally to a new dielectric forming metal/ceramic laminate magnet and process thereof. More particularly, the invention encompasses a new process for fabrication of a large area laminate magnet with a significant number of holes, integrated dielectric forming metal plate(s) and electrodes for electron and electron beam control. The present invention also relates to a magnetic matrix display and electron beam source and methods of manufacture thereof.

Abstract: A plate for use in mixing and testing materials in the pharmaceutical industry is formed by a method in which apertures in a set of greensheets are formed by a material removal process, at least some of the apertures being filled with a fugitive material that escapes during sintering.

Abstract: A plate for use in mixing and testing materials in the pharmaceutical industry is formed by a method in which apertures in a set of greensheets are formed by a material removal process, at least some of the apertures being filled with a fugitive material that escapes during sintering.

Abstract: The present invention relates generally to a new dielectric forming metal/ceramic laminate magnet and process thereof. More particularly, the invention encompasses a new process for fabrication of a large area laminate magnet with a significant number of holes, integrated dielectric forming metal plate(s) and electrodes for electron and electron beam control. The present invention also relates to a magnetic matrix display and electron beam source and methods of manufacture thereof.

Abstract: The present invention relates generally to a new dielectric forming metal/ceramic laminate magnet and process thereof. More particularly, the invention encompasses a new process for fabrication of a large area laminate magnet with a significant number of holes, integrated dielectric forming metal plate(s) and electrodes for electron and electron beam control. The present invention also relates to a magnetic matrix display and electron beam source and methods of manufacture thereof.

Abstract: The present invention relates generally to a new metal/ceramic laminate magnet and process thereof. More particularly, the invention encompasses a new process for fabrication of a large area laminate magnet with a significant number of holes, integrated metal plate(s) and electrodes for electron and electron beam control. The present invention also relates to a magnetic matrix display and electron beam source and methods of manufacture thereof.

Abstract: A cost-effective surface metallization structure of a TCA carrier is produced by using a high-grit conducting paste to fill TSM vias in the TSM of the TCA carrier. This concept can be applied to alumina substrates with refractory metal conductors or to LCGC substrates with more noble metal conductors.

Abstract: A semiconductor chip interposer increases fatigue life of interconnections between a first component having a relatively high thermal coefficient of expansion (TCE) and a second component having a relatively low TCE. The semiconductor chip interposer includes a thin metal plate having a plurality of through holes, the thin metal plate having a TCE intermediate the relatively high TCE and the relatively low TCE. An insulation coating on the thin metal plate is also included on walls of the through holes. An electrical conductive material fills each of the insulated through holes for electrical interconnection between the first component and the second component.

Abstract: Disclosed is a multilayer ceramic substrate having an outer pad, for example an I/O pad, which is anchored to a middle pad of the multilayer ceramic substrate by a plurality of vias which in turn is anchored to an inner pad of the multilayer ceramic substrate by a second plurality of vias. The middle and outer pads and vias are made of high metal material, preferably 100% metal, so they won't adhere very well to the ceramic substrate. The inner pad is a composite metal/ceramic material which will bond very well to the ceramic substrate.

Abstract: A process for fabricating a microelectronic structure. The process comprises processing a metal carrier having a top surface and a bottom surface, wherein the top surface and the bottom surface are processed to promote adhesion, forming a dielectric layer around the metal carrier, wherein the dielectric layer substantially covers the top surface and the bottom surface of the metal carrier, and applying a first patterned layer of conductive material to the microelectronic structure. In one preferred embodiment, the process further comprises comprising sintering the metal carrier, the dielectric layer, and the first patterned layer of conductive material. In one preferred embodiment, the process further comprises forming a via hole through the metal carrier before the forming of the dielectric layer around the metal carrier, wherein the forming of the dielectric layer comprises forming the dielectric layer inside the via hole.

Abstract: A process of forming a multi-layer feature on a ceramic or organic article in which first and second layers of paste are sequentially screened through a screening mask wherein the screening mask has not been moved between screening steps. A structure produced by this process is also disclosed.

Abstract: A process of forming a multi-layer feature on a ceramic or organic article in which first and second layers of paste are sequentially screened through a screening mask wherein the screening mask has not been moved between screening steps. A structure produced by this process is also disclosed.

Abstract: A method of and novel composition for transient liquid phase bonding of refractory metal structures is described herein. Preferably, the composition comprises a first component substantially similar to the composition of the refractory metal structure, and a second component having a lower melting temperature than the first component comprising a metallic constituent selected from the group consisting of iron, nickel and cobalt. The second component acts as a melting point depressant to temporarily lower the melting point of the first component so that the join can be accomplished without melting the structure itself. Upon applying the composition to the surfaces of refractory metal structures in need of joining, the assembly is heated to a eutectic point defined as the lowest melting point of the composition.

Abstract: Disclosed is a multilayer ceramic substrate having an outer pad, for example an I/O pad, which is anchored to an inner pad of the multilayer ceramic substrate by either a plurality of vias or one large via. The outer pad and vias are made of high metal material, preferably 100% metal, so they won't adhere very well to the ceramic substrate. The inner pad is a composite metal/ceramic material which will bond very well to the ceramic substrate.

Abstract: Metal pastes used in the fabrication of multilayer ceramic (MLC) substrates used in semiconductor devices. The pastes reduce substrate defects, such as via bulge and camber. The pastes are comprised of a metal having high conductivity, frit which includes glass, an organic binder, and a solvent, optionally with a surfactant.

Abstract: A multilayer ceramic substrate electronic component is provided having high temperature superconductor material circuitry. The high temperature superconductor material is preferably yttrium-barium-copper-oxide and is encased within a noble metal such as silver or gold when forming the surface circuitry or filling of the vias. The noble metal layers preferably have through-openings to enable direct connection of circuitry to the encased superconductor layer. A method is also provided for fabricating such multilayer ceramic substrate electronic components.

Abstract: A multilayer ceramic substrate electronic component is provided having high temperature superconductor material circuitry. The high temperature superconductor material is preferably yttrium-barium-copper-oxide and is encased within a noble metal such as silver or gold when forming the surface circuitry or filling of the vias. The noble metal layers preferably have through-openings to enable direct connection of circuitry to the encased superconductor layer. A method is also provided for fabricating such multilayer ceramic substrate electronic components.

Abstract: Disclosed is a method of selectively depositing a metallic layer on a metallic feature on a ceramic substrate. The metallic layer preferably may be elemental nickel particles, elemental copper particles, a mixture of copper and nickel particles, or copper/nickel alloy particles. The metallic layer is deposited as a paste mixture which includes the metallic particles and a binder material. Through a subsequent heating step, the metallic layer tightly bonds to the metallic feature but only loosely bonds to the ceramic substrate. Thereafter, an ultrasonic treatment is applied to remove the loosely adhered metallic layer on the ceramic substrate. The metallic layer on the metallic feature, being tightly bonded, is not removed by the ultrasonic treatment.

Abstract: Disclosed is an aluminum nitride body having graded metallurgy and a method for making such a body. The aluminum nitride body has at least one via and includes a first layer in direct contact with the aluminum nitride body and a second layer in direct contact with, and that completely encapsulates, the first layer. The first layer includes 30 to 60 volume percent aluminum nitride and 40 to 70 volume percent tungsten and/or molybdenum while the second layer includes 90 to 100 volume percent of tungsten and/or molybdenum and 0 to 10 volume percent of aluminum nitride.

Abstract: Disclosed is an aluminum nitride body having graded metallurgy and a method for making such a body. The aluminum nitride body has at least one via and includes a first layer in direct contact with the aluminum nitride body and a second layer in direct contact with, and that completely encapsulates, the first layer. The first layer includes 30 to 60 volume percent aluminum nitride and 40 to 70 volume percent tungsten and/or molybdenum while the second layer includes 90 to 100 volume percent of tungsten and/or molybdenum and 0 to 10 volume percent of aluminum nitride.