Abstract: The present invention relates to an improved process for the preparation of enzalutamide by conventional synthesis, which avoids utilization of microwave irradiation and noxious reagents. The present invention also relates to an improved process for preparation of 4-isothiocyanato-2-(trifluoromethyl) benzonitrile, which is an intermediate in the synthesis of Enzalutamide.

Abstract: Systems, methods, apparatuses, and computer program products are described herein that enable a computing device to dynamically generate virtual private network (VPN) connection profiles to which policies can be mapped and then subsequently enforced. The VPN connection profiles are dynamically generated by a translation engine by obtaining parameters from payloads received from a plurality of different VPN gateways pursuant to establishing connections therewith in accordance with a respective plurality of different tunneling protocols, which may include both standard and proprietary tunneling protocols. The dynamically-generated VPN connection profiles are then provided to a connection manager, which enforces any policies associated with the VPN connection profiles when servicing requests for connections received from applications running on the computing device.

Abstract: Systems, methods, apparatuses, and computer program products are described herein that enable a computing device to dynamically generate virtual private network (VPN) connection profiles to which policies can be mapped and then subsequently enforced. The VPN connection profiles are dynamically generated by a translation engine by obtaining parameters from payloads received from a plurality of different VPN gateways pursuant to establishing connections therewith in accordance with a respective plurality of different tunneling protocols, which may include both standard and proprietary tunneling protocols. The dynamically-generated VPN connection profiles are then provided to a connection manager, which enforces any policies associated with the VPN connection profiles when servicing requests for connections received from applications running on the computing device.

Abstract: The invention provides a novel herbal composition for treatment of arthritis and inflammation. The herbal composition comprises a therapeutically effective combination of extracts obtained from the plants Terminalia chebula, Pluchea lanceolata, Desmodium gangeticum, Vitex negunto and Zingiber officinale, optionally along with pharmaceutically acceptable additives. The invention further comprises methods of making the herbal composition and methods of use for the treatment of arthritis and inflammation.

Abstract: The invention provides a novel herbal composition for treatment of arthritis and inflammation. The herbal composition comprises a therapeutically effective combination of extracts obtained from the plants Terminalia chebula, Pluchea lanceolata, Desmodium gangeticum, Vitex negunto and Zingiber officinale, optionally along with pharmaceutically acceptable additives. The invention further comprises methods of making the herbal composition and methods of use for the treatment of arthritis and inflammation.

Abstract: The invention provides a novel herbal synergistic formulation for treatment of acute and chronic ulcers in stomach. Formulation(s) comprises of plant extracts together with the conventional additives to form the oral dosage forms which include tablets, capsules and powders ready for suspension. Utleria solicifolia along with this plants used traditionally like Asparagus racemosus, Foeniculum vulgare, and Ficus glomerata are added which are used in intestinal discomforts and as an galactogogue.

Abstract: A method of improving adhesion of a cap oxide to nanoporous silica for integrated circuit fabrication. In one embodiment, the method comprises several steps. The first step is to receive a wafer in a deposition chamber. Then a porous layer of material is deposited on the wafer. Next, a portion of the porous layer is densified in order to make it more compatible for adhesion to a cap layer. Finally, a cap layer is deposited onto the porous layer.

Abstract: A method of determining an end point for a remote microwave plasma cleaning system. In one embodiment, the method comprises several steps. The first step is to expose an electrical device to a deposition operation. Next, the electrical device is exposed to a plasma cleaning operation. In the following step, a value for a performance characteristic of the electrical device is measured. In the last step, an amount of cleaning performed on the electrical device is calculated based on a relationship between a baseline value of the performance characteristic and on the measured value of the performance characteristic of the electrical device.

Abstract: A method of improving adhesion of a cap oxide to nanoporous silica for integrated circuit fabrication. In one embodiment, the method comprises several steps. The first step is to receive a wafer in a deposition chamber. Then a porous layer of material is deposited on the wafer. Next, a portion of the porous layer is densified in order to make it more compatible for adhesion to a cap layer. Finally, a cap layer is deposited onto the porous layer.

Abstract: A method of improving adhesion of a cap oxide to nanoporous silica for integrated circuit fabrication. In one embodiment, the method comprises several steps. The first step is to receive a wafer in a deposition chamber. Then a porous layer of material is deposited on the wafer. Next, a portion of the porous layer is densified in order to make it more compatible for adhesion to a cap layer. Finally, a cap layer is deposited onto the porous layer.

Abstract: A copper-based paste is disclosed for filling vias in, and forming conductive surface patterns on, ceramic substrate packages for semiconductor chip devices. The paste contains copper aluminate powder in proper particle size and weight proportion to achieve grain size and shrinkage control of the via and thick film copper produced by sintering. The shrinkage of the copper material during sintering is closely matched to that of the ceramic substrate.

Abstract: A method for depositing a liner dielectric on a semiconductor substrate provides for sufficient adhesion of low dielectric constant spin-on materials among metal layers in sub-micron processes. In an example embodiment, a method for adhering MSQ provides for a liner oxide on an aluminum alloy layer on a semiconductor substrate. First, the substrate is placed into a PECVD environment. A gas mixture of trimethylsilane and N2O is introduced into the PECVD environment at a trimethylsilane-to-N2O ratio of about 1:20 to 1:30. The gas mixture is reacted to deposit an oxide liner of a predetermined thickness. Adjusting the gas mixture trimethylsilane-to-N2O ratio to about 1:3 to 1:7 over the course of about 5 to 20 seconds, and sustaining the reaction thereof, deposits a methyl doped oxide.

Abstract: Novel water soluble C-ring analogues of 20(S)-camptothecin having the general formula 1. All the compounds of the formula 1 are prepared from the compounds of the general formula 2 having 20(S)-chiral carbon. The compounds of the formula 1 possess potent anti-cancer and anti-viral properties. The invention also provides an alternate process for the preparation of known C-5 substituted compounds of the formula 1.

Abstract: A semiconductor device has a device layer, a conductive structure, such as a conductive line, disposed over the device layer, and a porous dielectric layer disposed over the device layer and the conductive structure. At least one via is formed through the porous dielectric layer to the conductive structure with a second dielectric material formed along sidewalls of the via. Often, the porous dielectric layer includes a hydrophobic aerogel material having silicon-hydrogen bonds. One exemplary method of making the semiconductor device includes forming a conductive structure over a device layer of the semiconductor device and then forming a porous dielectric layer over the device layer and the conductive structure. A first via is formed through the porous dielectric layer to the conductive structure. The first via is filled with a second dielectric material that is less porous than the porous dielectric layer and then a second via is formed through the second dielectric material to the conductive structure.

Abstract: A copper-based paste is disclosed for filling vias in, and forming conductive surface patterns on, ceramic substrate packages for semiconductor chip devices. The paste contains copper aluminate powder in proper particle size and weight proportion to achieve grain size and shrinkage control of the via and thick film copper produced by sintering. The shrinkage of the copper material during sintering is closely matched to that of the ceramic substrate.

Abstract: An autoclave is disclosed which includes direct heating and improved access. The autoclave includes a heating system which is placed directly into the pressurized chamber such that materials which are placed directly into the autoclave are directly heated. The autoclave includes doors which are disposed inside of the pressure vessel which seal against the inside surface of the pressure vessel upon pressurization. In one embodiment a pivot system is used to hold the door in place when the autoclave is not sufficiently pressurized so as to hold the door against the inside wall of the autoclave. In an alternate embodiment a robotic system is used to hold the door in place when the autoclave is not sufficiently pressurized so as to hold the door against the inside wall of the autoclave. The robotic system is also used to move the door out of the way after depressurization.

Abstract: A copper-based paste is disclosed for filling vias in, and forming conductive surface patterns on, ceramic substrate packages for semiconductor chip devices. The paste contains copper aluminate powder in proper particle size and weight proportion to achieve grain size and shrinkage control of the via and thick film copper produced by sintering. The shrinkage of the copper material during sintering is closely matched to that of the ceramic substrate.

Abstract: Disclosed is an aluminum nitride body having graded metallurgy and a method for making such a body. The aluminum nitride body has at least one via and includes a first layer in direct contact with the aluminum nitride body and a second layer in direct contact with, and that completely encapsulates, the first layer. The first layer includes 30 to 60 volume percent aluminum nitride and 40 to 70 volume percent tungsten and/or molybdenum while the second layer includes 90 to 100 volume percent of tungsten and/or molybdenum and 0 to 10 volume percent of aluminum nitride.

Abstract: Disclosed is an aluminum nitride body having graded metallurgy and a method for making such a body. The aluminum nitride body has at least one via and includes a first layer in direct contact with the aluminum nitride body and a second layer in direct contact with, and that completely encapsulates, the first layer. The first layer includes 30 to 60 volume percent aluminum nitride and 40 to 70 volume percent tungsten and/or molybdenum while the second layer includes 90 to 100 volume percent of tungsten and/or molybdenum and 0 to 10 volume percent of aluminum nitride.