Abstract: A method of improving adhesion of a cap oxide to nanoporous silica for integrated circuit fabrication. In one embodiment, the method comprises several steps. The first step is to receive a wafer in a deposition chamber. Then a porous layer of material is deposited on the wafer. Next, a portion of the porous layer is densified in order to make it more compatible for adhesion to a cap layer. Finally, a cap layer is deposited onto the porous layer.

Abstract: A method of determining an end point for a remote microwave plasma cleaning system. In one embodiment, the method comprises several steps. The first step is to expose an electrical device to a deposition operation. Next, the electrical device is exposed to a plasma cleaning operation. In the following step, a value for a performance characteristic of the electrical device is measured. In the last step, an amount of cleaning performed on the electrical device is calculated based on a relationship between a baseline value of the performance characteristic and on the measured value of the performance characteristic of the electrical device.

Abstract: A method of improving adhesion of a cap oxide to nanoporous silica for integrated circuit fabrication. In one embodiment, the method comprises several steps. The first step is to receive a wafer in a deposition chamber. Then a porous layer of material is deposited on the wafer. Next, a portion of the porous layer is densified in order to make it more compatible for adhesion to a cap layer. Finally, a cap layer is deposited onto the porous layer.

Abstract: A method of improving adhesion of a cap oxide to nanoporous silica for integrated circuit fabrication. In one embodiment, the method comprises several steps. The first step is to receive a wafer in a deposition chamber. Then a porous layer of material is deposited on the wafer. Next, a portion of the porous layer is densified in order to make it more compatible for adhesion to a cap layer. Finally, a cap layer is deposited onto the porous layer.

Abstract: A method for depositing a liner dielectric on a semiconductor substrate provides for sufficient adhesion of low dielectric constant spin-on materials among metal layers in sub-micron processes. In an example embodiment, a method for adhering MSQ provides for a liner oxide on an aluminum alloy layer on a semiconductor substrate. First, the substrate is placed into a PECVD environment. A gas mixture of trimethylsilane and N2O is introduced into the PECVD environment at a trimethylsilane-to-N2O ratio of about 1:20 to 1:30. The gas mixture is reacted to deposit an oxide liner of a predetermined thickness. Adjusting the gas mixture trimethylsilane-to-N2O ratio to about 1:3 to 1:7 over the course of about 5 to 20 seconds, and sustaining the reaction thereof, deposits a methyl doped oxide.

Abstract: A semiconductor device has a device layer, a conductive structure, such as a conductive line, disposed over the device layer, and a porous dielectric layer disposed over the device layer and the conductive structure. At least one via is formed through the porous dielectric layer to the conductive structure with a second dielectric material formed along sidewalls of the via. Often, the porous dielectric layer includes a hydrophobic aerogel material having silicon-hydrogen bonds. One exemplary method of making the semiconductor device includes forming a conductive structure over a device layer of the semiconductor device and then forming a porous dielectric layer over the device layer and the conductive structure. A first via is formed through the porous dielectric layer to the conductive structure. The first via is filled with a second dielectric material that is less porous than the porous dielectric layer and then a second via is formed through the second dielectric material to the conductive structure.

Abstract: An autoclave is disclosed which includes direct heating and improved access. The autoclave includes a heating system which is placed directly into the pressurized chamber such that materials which are placed directly into the autoclave are directly heated. The autoclave includes doors which are disposed inside of the pressure vessel which seal against the inside surface of the pressure vessel upon pressurization. In one embodiment a pivot system is used to hold the door in place when the autoclave is not sufficiently pressurized so as to hold the door against the inside wall of the autoclave. In an alternate embodiment a robotic system is used to hold the door in place when the autoclave is not sufficiently pressurized so as to hold the door against the inside wall of the autoclave. The robotic system is also used to move the door out of the way after depressurization.