Patents by Inventor Rao Venkateswara Vallabhaneni

Rao Venkateswara Vallabhaneni has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6358439
    Abstract: A copper-based paste is disclosed for filling vias in, and forming conductive surface patterns on, ceramic substrate packages for semiconductor chip devices. The paste contains copper aluminate powder in proper particle size and weight proportion to achieve grain size and shrinkage control of the via and thick film copper produced by sintering. The shrinkage of the copper material during sintering is closely matched to that of the ceramic substrate.
    Type: Grant
    Filed: June 6, 1995
    Date of Patent: March 19, 2002
    Assignee: International Business Machines Corporation
    Inventors: Farid Youssif Aoude, Lawrence Daniel David, Renuka Shastri Divakaruni, Shaji Farooq, Lester Wynn Herron, Hal Mitchell Lasky, Anthony Mastreani, Govindarajan Natarajan, Srinivasa S. N. Reddy, Vivek Madan Sura, Rao Venkateswara Vallabhaneni, Donald Rene Wall
  • Patent number: 6124041
    Abstract: A copper-based paste is disclosed for filling vias in, and forming conductive surface patterns on, ceramic substrate packages for semiconductor chip devices. The paste contains copper aluminate powder in proper particle size and weight proportion to achieve grain size and shrinkage control of the via and thick film copper produced by sintering. The shrinkage of the copper material during sintering is closely matched to that of the ceramic substrate.
    Type: Grant
    Filed: March 11, 1999
    Date of Patent: September 26, 2000
    Assignee: International Business Machines Corporation
    Inventors: Farid Youssif Aoude, Lawrence Daniel David, Renuka Shastri Divakaruni, Shaji Farooq, Lester Wynn Herron, Hal Mitchell Lasky, Anthony Mastreani, Govindarajan Natarajan, Srinivasa S. N. Reddy, Vivek Madan Sura, Rao Venkateswara Vallabhaneni, Donald Rene Wall
  • Patent number: 5925443
    Abstract: A copper-based paste is disclosed for filling vias in, and forming conductive surface patterns on, ceramic substrate packages for semiconductor chip devices. The paste contains copper aluminate powder in proper particle size and weight proportion to achieve grain size and shrinkage control of the via and thick film copper produced by sintering. The shrinkage of the copper material during sintering is closely matched to that of the ceramic substrate.
    Type: Grant
    Filed: September 10, 1991
    Date of Patent: July 20, 1999
    Assignee: International Business Machines Corporation
    Inventors: Farid Youssif Aoude, Lawrence Daniel David, Renuka Shastri Divakaruni, Shaji Farooq, Lester Wynn Herron, Hal Mitchell Lasky, Anthony Mastreani, Govindarajan Natarajan, Srinivasa S. N. Reddy, Vivek Madan Sura, Rao Venkateswara Vallabhaneni, Donald Rene Wall
  • Patent number: 5763093
    Abstract: Disclosed is an aluminum nitride body having graded metallurgy and a method for making such a body. The aluminum nitride body has at least one via and includes a first layer in direct contact with the aluminum nitride body and a second layer in direct contact with, and that completely encapsulates, the first layer. The first layer includes 30 to 60 volume percent aluminum nitride and 40 to 70 volume percent tungsten and/or molybdenum while the second layer includes 90 to 100 volume percent of tungsten and/or molybdenum and 0 to 10 volume percent of aluminum nitride.
    Type: Grant
    Filed: June 3, 1996
    Date of Patent: June 9, 1998
    Assignees: International Business Machines Corporation, The Carborundum Company
    Inventors: Jon Alfred Casey, Carla Natalia Cordero, Benjamin Vito Fasano, David Brian Goland, Robert Hannon, Jonathan H. Harris, Lester Wynn Herron, Gregory Marvin Johnson, Niranjan Mohanlal Patel, Andrew Michael Reitter, Subhash Laxman Shinde, Rao Venkateswara Vallabhaneni, Robert A. Youngman
  • Patent number: 5682589
    Abstract: Disclosed is an aluminum nitride body having graded metallurgy and a method for making such a body. The aluminum nitride body has at least one via and includes a first layer in direct contact with the aluminum nitride body and a second layer in direct contact with, and that completely encapsulates, the first layer. The first layer includes 30 to 60 volume percent aluminum nitride and 40 to 70 volume percent tungsten and/or molybdenum while the second layer includes 90 to 100 volume percent of tungsten and/or molybdenum and 0 to 10 volume percent of aluminum nitride.
    Type: Grant
    Filed: June 3, 1996
    Date of Patent: October 28, 1997
    Assignee: International Business Machines Corporation
    Inventors: Jon Alfred Casey, Carla Natalia Cordero, Benjamin Vito Fasano, David Brian Goland, Robert Hannon, Jonathan H. Harris, Lester Wynn Herron, Gregory Marvin Johnson, Niranjan Mohanlal Patel, Andrew Michael Reitter, Subhash Laxman Shinde, Rao Venkateswara Vallabhaneni, Robert A. Youngman