Abstract: An image sensing device is provided with an image sensor having one or more radiation-sensitive elements which convert incident radiation into collected charges. A read-out circuit converts the collected charges into pixel signals which contain a hold level and an image level, the hold level providing a comparison voltage and the image level being representative of a charge quantity. The hold level is formed by coupling the read-out circuit temporarily to a comparison voltage; this coupling is done by closing a transistor which adds thermal noise to the pixel signal. The image sensing device comprises a signal processing circuit which comprises a clamp circuit which makes hold-levels of different pixel signals substantially equal. The image level of each pixel signal is offset by the same amount as its hold level. An electronic image signal is formed as a result of integration of the image level in respect of the clamped hold level.