Patents by Inventor Raphaél Caulmilone

Raphaél Caulmilone has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for manufacturing a plurality of crystalline semiconductor islands having a variety of lattice parameters
    Patent number: 11171256
    Abstract: A method for manufacturing a plurality of crystalline semiconductor islands having a variety of lattice parameters includes the following steps: providing a relaxation substrate that comprises a medium, a flow layer disposed on the medium and, a plurality of strained crystalline semiconductor islands having an initial lattice parameter located on the flow layer, a first group of islands having a first lattice parameter and a second group of islands having a second lattice parameter that is different from the first; and heat treating the relaxation substrate at a relaxation temperature greater than or equal to the glass transition temperature of the flow layer to cause differentiated lateral expansion of the islands of the first and second group. The lattice parameter of the relaxed islands of the first group and the relaxed islands of the second group then have different values.
    Type: Grant
    Filed: March 13, 2019
    Date of Patent: November 9, 2021
    Assignee: Soitec
    Inventors: Jean-Marc Bethoux, Morgane Logiou, Raphaél Caulmilone
  • GROWTH SUBSTRATE FOR FORMING OPTOELECTRONIC DEVICES, METHOD FOR MANUFACTURING SUCH A SUBSTRATE, AND USE OF THE SUBSTRATE, IN PARTICULAR IN THE FIELD OF MICRO-DISPLAY SCREENS
    Publication number: 20210210653
    Abstract: A growth substrate for forming optoelectronic devices comprises a growth medium and, arranged on the growth medium, a first group of crystalline semiconductor islands having a first lattice parameter and a second group of crystalline semiconductor islands having a second lattice parameter that is different from the first. Methods may be used to manufacture such growth substrates. The methods may be used to provide a monolithic micro-panel or light-emitting diodes or a micro-display screen.
    Type: Application
    Filed: March 14, 2018
    Publication date: July 8, 2021
    Inventors: David Sotta, Olivier Ledoux, Olivier Bonnin, Jean-Marc Bethoux, Morgane Logiou, Raphaél Caulmilone
  • PROCESS FOR MANUFACTURING A PLURALITY OF CRYSTALLINE SEMICONDUCTOR ISLANDS HAVING A VARIETY OF LATTICE PARAMETERS
    Publication number: 20190288157
    Abstract: A method for manufacturing a plurality of crystalline semiconductor islands having a variety of lattice parameters includes the following steps: providing a relaxation substrate that comprises a medium, a flow layer disposed on the medium and, a plurality of strained crystalline semiconductor islands having an initial lattice parameter located on the flow layer, a first group of islands having a first lattice parameter and a second group of islands having a second lattice parameter that is different from the first; and heat treating the relaxation substrate at a relaxation temperature greater than or equal to the glass transition temperature of the flow layer to cause differentiated lateral expansion of the islands of the first and second group. The lattice parameter of the relaxed islands of the first group and the relaxed islands of the second group then have different values.
    Type: Application
    Filed: March 13, 2019
    Publication date: September 19, 2019
    Inventors: Jean-Marc Bethoux, Morgane Logiou, Raphaél Caulmilone