Patents by Inventor Raphaël HUCHET
Raphaël HUCHET has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10598800Abstract: The present disclosure relates to a process for fabricating a crystalline scintillator material with a structure of elpasolite type of theoretical composition A2BC(1-y)MyX(6-y) wherein: A is chosen from among Cs, Rb, K, Na, B is chosen from among Li, K, Na, C is chosen from among the rare earths, Al, Ga, M is chosen from among the alkaline earths, X is chosen from among F, Cl, Br, I, y representing the atomic fraction of substitution of C by M and being in the range extending from 0 to 0.05, comprising its crystallization by cooling from a melt bath comprising r moles of A and s moles of B, the melt bath in contact with the material containing A and B in such a way that 2s/r is above 1. The process shows an improved fabrication yield. Moreover, the crystals obtained can have compositions closer to stoichiometry and have improved scintillation properties.Type: GrantFiled: November 30, 2018Date of Patent: March 24, 2020Assignee: Saint-Gobain Cristaux et DetecteursInventors: Vladimir Ouspenski, Samuel Blahuta, Raphaël Huchet, Julien Lejay
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Publication number: 20190107636Abstract: The present disclosure relates to a process for fabricating a crystalline scintillator material with a structure of elpasolite type of theoretical composition A2BC(1-y)MyX(6-y) wherein: A is chosen from among Cs, Rb, K, Na, B is chosen from among Li, K, Na, C is chosen from among the rare earths, Al, Ga, M is chosen from among the alkaline earths, X is chosen from among F, Cl, Br, I, y representing the atomic fraction of substitution of C by M and being in the range extending from 0 to 0.05, comprising its crystallization by cooling from a melt bath comprising r moles of A and s moles of B, the melt bath in contact with the material containing A and B in such a way that 2s/r is above 1. The process shows an improved fabrication yield. Moreover, the crystals obtained can have compositions closer to stoichiometry and have improved scintillation properties.Type: ApplicationFiled: November 30, 2018Publication date: April 11, 2019Inventors: Vladimir OUSPENSKI, Samuel BLAHUTA, Raphaël HUCHET, Julien LEJAY
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Patent number: 10180503Abstract: The present disclosure relates to a process for fabricating a crystalline scintillator material with a structure of elpasolite type of theoretical composition A2BC(1-y)MyX(6-y) wherein: A is chosen from among Cs, Rb, K, Na, B is chosen from among Li, K, Na, C is chosen from among the rare earths, Al, Ga, M is chosen from among the alkaline earths, X is chosen from among F, Cl, Br, I, y representing the atomic fraction of substitution of C by M and being in the range extending from 0 to 0.05, comprising its crystallization by cooling from a melt bath comprising r moles of A and s moles of B, the melt bath in contact with the material containing A and B in such a way that 2s/r is above 1. The process shows an improved fabrication yield. Moreover, the crystals obtained can have compositions closer to stoichiometry and have improved scintillation properties.Type: GrantFiled: April 23, 2018Date of Patent: January 15, 2019Assignee: Saint-Gobain Cristaux et DetecteursInventors: Vladimir Ouspenski, Samuel Blahuta, Raphaël Huchet, Julien Lejay
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Publication number: 20180246230Abstract: The present disclosure relates to a process for fabricating a crystalline scintillator material with a structure of elpasolite type of theoretical composition A2BC(1-y)MyX(6-y) wherein: A is chosen from among Cs, Rb, K, Na, B is chosen from among Li, K, Na, C is chosen from among the rare earths, Al, Ga, M is chosen from among the alkaline earths, X is chosen from among F, Cl, Br, I, y representing the atomic fraction of substitution of C by M and being in the range extending from 0 to 0.05, comprising its crystallization by cooling from a melt bath comprising r moles of A and s moles of B, the melt bath in contact with the material containing A and B in such a way that 2s/r is above 1. The process shows an improved fabrication yield. Moreover, the crystals obtained can have compositions closer to stoichiometry and have improved scintillation properties.Type: ApplicationFiled: April 23, 2018Publication date: August 30, 2018Inventors: Vladimir OUSPENSKI, Samuel BLAHUTA, Raphaël HUCHET, Julien LEJAY
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Patent number: 9983318Abstract: The present disclosure relates to a process for fabricating a crystalline scintillator material with a structure of elpasolite type of theoretical composition A2BC(1-y)MyX(6-y) wherein: A is chosen from among Cs, Rb, K, Na; B is chosen from among Li, K, Na; C is chosen from among the rare earths, Al, Ga; M is chosen from among the alkaline earths, X is chosen from among F, Cl, Br, I; y representing the atomic fraction of substitution of C by M and being in the range extending from 0 to 0.05, comprising its crystallization by cooling from a melt bath comprising r moles of A and s moles of B, the melt bath in contact with the material containing A and B in such a way that 2s/r is above 1. The process shows an improved fabrication yield. Moreover, the crystals obtained can have compositions closer to stoichiometry and have improved scintillation properties.Type: GrantFiled: January 27, 2017Date of Patent: May 29, 2018Assignee: Saint-Gobain Cristaux et DetecteursInventors: Vladimir Ouspenski, Samuel Blahuta, Raphaël Huchet, Julien Lejay
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Publication number: 20170139059Abstract: The present disclosure relates to a process for fabricating a crystalline scintillator material with a structure of elpasolite type of theoretical composition A2BC(1-y)MyX(6-y) wherein: A is chosen from among Cs, Rb, K, Na, B is chosen from among Li, K, Na, C is chosen from among the rare earths, Al, Ga, M is chosen from among the alkaline earths, X is chosen from among F, Cl, Br, I, y representing the atomic fraction of substitution of C by M and being in the range extending from 0 to 0.05, comprising its crystallization by cooling from a melt bath comprising r moles of A and s moles of B, the melt bath in contact with the material containing A and B in such a way that 2s/r is above 1. The process shows an improved fabrication yield. Moreover, the crystals obtained can have compositions closer to stoichiometry and have improved scintillation properties.Type: ApplicationFiled: January 27, 2017Publication date: May 18, 2017Inventors: Vladimir OUSPENSKI, Samuel BLAHUTA, Raphaël HUCHET, Julien LEJAY
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Patent number: 9599727Abstract: A process for fabricating a crystalline scintillator material with an elpasolite structure that has a theoretical composition of A2BC(1-y)MyX(6-y) can include conducting crystallization by cooling from a melt bath including r moles of A and s moles of B. A is chosen from Cs, Rb, K, and Na. B is chosen from Li, K, and Na. C is chosen from athe rare earth elements, Al, and Ga. M is chosen from the alkaline earth elements. X is chosen from F, Cl, Br, and I, and y represents the atomic fraction of substitution of C by M and is in the range extending from 0 to 0.05. The melt bath can be in contact with the material containing A and B in such a way that 2s/r is above 1. The process shows an improved fabrication yield. The crystals formed therefrom can have improved scintillation properties.Type: GrantFiled: October 9, 2015Date of Patent: March 21, 2017Assignee: SAINT-GOBAIN CRISTAUX ET DETECTEURSInventors: Vladimir Ouspenski, Samuel Blahuta, Raphael Huchet, Julien Lejay
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Publication number: 20160103232Abstract: The present disclosure relates to a process for fabricating a crystalline scintillator material with a structure of elpasolite type of theoretical composition A2BC(1-y)MyX(6-y) wherein A is chosen from among Cs, Rb, K, Na, B is chosen from among Li, K, Na, C is chosen from among the rare earths, Al, Ga, M is chosen from among the alkaline earths, X is chosen from among F, Cl, Br, I, y representing the atomic fraction of substitution of C by M and being in the range extending from 0 to 0.05, comprising its crystallization by cooling from a melt bath comprising r moles of A and s moles of B, the melt bath in contact with the material containing A and B in such a way that 2s/r is above 1. The process shows an improved fabrication yield. Moreover, the crystals obtained can have compositions closer to stoichiometry and have improved scintillation properties.Type: ApplicationFiled: October 9, 2015Publication date: April 14, 2016Inventors: Vladimir OUSPENSKI, Samuel BLAHUTA, Raphaël HUCHET, Julien LEJAY
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Publication number: 20110098171Abstract: The subject of the invention is a continuous process for preparing glass comprising the successive steps of charging of pulverulent batch materials, and of obtaining a glass bath by melting, of refining then of cooling. The process is characterized in that an oxidizing gas is bubbled within said glass bath after the refining step.Type: ApplicationFiled: March 3, 2009Publication date: April 28, 2011Applicant: SAINT-GOBAIN GLASS FRANCEInventors: Philippe Pedeboscq, Dorothee Martin, Octavio Cintora, Raphael Huchet