Abstract: Some embodiments are directed to a method of determining a sintering thermal impedance of a sintering layer by: providing a substrate having a predetermined substrate thermal impedance and disposing the sintering layer on the substrate forming with the sintering layer a stack. Placing at least one semiconductor die, that includes a semiconductor element with at least two element electrodes on the sintering layer. Injecting an electrical current through the at least two element electrodes for measuring a temperature sensitive parameter of the semiconductor element. Heating the stack with a predetermined heat power and determining, while sintering, a semiconductor element temperature from the measured temperature sensitive parameter.

Abstract: A method of determining a sintering thermal impedance of a sintering layer (25) comprising: providing a substrate (20) having a predetermined substrate thermal impedance, disposing the sintering layer (25) on the substrate (20) forming with the sintering layer (25) a stack, placing at least one semiconductor die (30) comprising a semiconductor element (40) with at least two element electrodes (45; 47) on the sintering layer (25), injecting an electrical current through the at least two element electrodes (45; 47) for measuring a temperature sensitive parameter of the semiconductor element (40), heating the stack with a predetermined heat power, determining, while sintering, a semiconductor element temperature from the measured temperature sensitive parameter, measuring a stack temperature, determining a stack thermal impedance by subtracting the semiconductor element temperature from the stack temperature and dividing by the predetermined heat power, and subtracting the predetermined substrate thermal impedan

Abstract: Some embodiments relate to a semiconductor power device that includes a first substrate, a second substrate, a stack and an interconnect structure. The first substrate includes a first patterned electrically conductive layer on a first surface and a switching semiconductor element. The second substrate includes a second surface facing the first surface and a second patterned electrically conductive layer on the second surface. The stack includes an electrically conductive track and a layer of a dielectric material. The layer of the dielectric material is provided on the first or second patterned electrically conductive layer and the layer of the dielectric material isolates the electrically conductive track from the patterned electrically conductive layer on which the stack is provided. The interconnect structure provides at least one electrical connection electrically conductive layers or areas of the substrates.

Abstract: Some embodiments relate to a semiconductor power device that includes a first substrate, a second substrate, a stack and an interconnect structure. The first substrate includes a first patterned electrically conductive layer on a first surface and a switching semiconductor element. The second substrate includes a second surface facing the first surface and a second patterned electrically conductive layer on the second surface. The stack includes an electrically conductive track and a layer of a dielectric material. The layer of the dielectric material is provided on the first or second patterned electrically conductive layer and the layer of the dielectric material isolates the electrically conductive track from the patterned electrically conductive layer on which the stack is provided. The interconnect structure provides at least one electrical connection electrically conductive layers or areas of the substrates.

Abstract: The present invention relates to an implant comprising: —a core material comprising polydimethylsiloxane or at least one hydrogel polymer; —a tube encasing said core material comprising an ethylene vinyl acetate polymer or at least one hydrogel polymer; —a sealant for closure of the open ends of said tube comprising polydimethylsiloxane or a mono-, di-, or triacetoxy derivative thereof, or at least one hydrogel polymer; and —at least one active ingredient; wherein said at least one active ingredient is selected from the group comprising celecoxib, sulindac, tamoxifen, oestrogen, oestradiol, ethinyl oestradiol, mestranol, dienogest, norgestrel, levonorgestrel, desogestrel, norgestimate, ethynodiol diacetate, leuprorelin, buserelin, gonrelin, triptorelin, nafarelin, deslorelin, histrelin, and supprelin; and with the proviso that when the sealant is said at least one hydrogelpolymer, the core material comprises polydimethylsiloxane. Furthermore, the invention relates to an implant for use as a medicament.