Patents by Inventor Raphael A. Dandl

Raphael A. Dandl has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6897616
    Abstract: A plasma transport system uses a slow-wave power signal in external radio-frequency (RF) inductors to force plasmas to flow through ducts, such as from a plasma generator to a point of use. A magneto-hydrodynamic force is deliberately created by the RF inductors to displace plasma electrons down along the inside of the ductwork. A charge separation results that both drags the ions along and slows down the electrons with the ion drag. The consequence is that both electrons and ions are motivated down the ductwork and the overall plasma charge stays neutral. A directed stream of energetic ions and neutral gas atoms can be realized. The RF electric fields induced in the plasma tend to counteract any electron cooling and help maintains the plasma electron temperature enough to reduce later reionization power demands.
    Type: Grant
    Filed: June 20, 2002
    Date of Patent: May 24, 2005
    Inventor: Raphael A. Dandl
  • Patent number: 6873113
    Abstract: A stand-alone plasma vacuum pump for pumping gas from a low-pressure inlet to a high-pressure outlet, composed of: a housing enclosing one or more pumping regions located between the inlet and the outlet; a plurality of permanent magnet assemblies providing magnetic fields that extend in the pumping region between the inlet and the outlet, the magnetic field forming magnetic flux channels for guiding and confining plasmas; elements disposed for coupling microwave power into the flux channels to heat electrons, ionize gas, and accelerate plasma ions in a direction from the inlet to the outlet; elements disposed for creating an electric in the magnetic flux channels to accelerate ions in the flux channels toward the outlet by momentum transfer; and a differential conductance baffle proximate to the outlet for promoting flow of plasma ions and neutral atoms to the outlet.
    Type: Grant
    Filed: October 11, 2002
    Date of Patent: March 29, 2005
    Assignees: Tokyo Electron Limited
    Inventors: Raphael A. Dandl, Bill H. Quon
  • Patent number: 6729850
    Abstract: A plasma vacuum pump including an array of permanent magnets, one or more plasma conduits or ducts, components for accelerating plasma ions through these conduits, and supporting structures that together comprise at least one applied plasma duct system (APDS) cell. The APDS cell permits large volumes of particles and plasma to flow rapidly in a preferred direction while constricting the flow of neutral particles in the reverse direction. A plasma pump utilizing APDS technology is intended to permit a large throughput of ionized gas at the intermediate pressures of interest in the plasma-enhanced processing industry, compressing this gas to a pressure at which blower-type pumps can be used efficiently to exhaust the spent processing gas at atmospheric pressure.
    Type: Grant
    Filed: October 30, 2002
    Date of Patent: May 4, 2004
    Assignees: Tokyo Electron Limited
    Inventors: Raphael A. Dandl, Bill H. Quon, Samuel S Antley, Andrej S. Mitrovic, Wayne L. Johnson
  • Publication number: 20030234616
    Abstract: A plasma transport system uses a slow-wave power signal in external radio-frequency (RF) inductors to force plasmas to flow through ducts, such as from a plasma generator to a point of use. A magneto-hydrodynamic force is deliberately created by the RF inductors to displace plasma electrons down along the inside of the ductwork. A charge separation results that both drags the ions along and slows down the electrons with the ion drag. The consequence is that both electrons and ions are motivated down the ductwork and the overall plasma charge stays neutral. A directed stream of energetic ions and neutral gas atoms can be realized. The RF electric fields induced in the plasma tend to counteract any electron cooling and help maintains the plasma electron temperature enough to reduce later reionization power demands.
    Type: Application
    Filed: June 20, 2002
    Publication date: December 25, 2003
    Inventor: Raphael A. Dandl
  • Publication number: 20030122492
    Abstract: A stand-alone plasma vacuum pump for pumping gas from a low-pressure inlet to a high-pressure outlet, composed of: a housing enclosing one or more pumping regions located between the inlet and the outlet; a plurality of permanent magnet assemblies providing magnetic fields that extend in the pumping region between the inlet and the outlet, the magnetic field forming magnetic flux channels for guiding and confining plasmas; elements disposed for coupling microwave power into the flux channels to heat electrons, ionize gas, and accelerate plasma ions in a direction from the inlet to the outlet; elements disposed for creating an electric in the magnetic flux channels to accelerate ions in the flux channels toward the outlet by momentum transfer; and a differential conductance baffle proximate to the outlet for promoting flow of plasma ions and neutral atoms to the outlet while impeding flow of neutral gas molecules in a direction from the outlet toward the inlet.
    Type: Application
    Filed: October 11, 2002
    Publication date: July 3, 2003
    Inventors: Raphael A. Dandl, Bill H. Quon
  • Publication number: 20030117080
    Abstract: A plasma vacuum pump including an array of permanent magnets, one or more plasma conduits or ducts, means for accelerating plasma ions through these conduits, and supporting structures that together comprise at least one applied plasma duct system (APDS) cell. The APDS cell permits large volumes of particles and plasma to flow rapidly in a preferred direction while constricting the flow of neutral particles in the reverse direction. A plasma pump utilizing APDS technology is intended to permit a large throughput of ionized gas at the intermediate pressures of interest in the plasma-enhanced processing industry, compressing this gas to a pressure at which blower-type pumps can be used efficiently to exhaust the spent processing gas at atmospheric pressure.
    Type: Application
    Filed: October 30, 2002
    Publication date: June 26, 2003
    Inventors: Raphael A. Dandl, Bill H. Quon, Samuel S. Antley, Andrej S. Mitrovic, Wayne L. Johnson
  • Patent number: 6559601
    Abstract: A plasma pump and method for pumping ions from a first to second region, the pump including a partition member having a through opening defining a plurality of conduits (30); a group of magnets (24) to provide magnetic forces that extend to the conduits; and a plurality of electric potential sources (14) for creating electrostatic fields which accelerate ions from the conduits to the second region.
    Type: Grant
    Filed: July 2, 2001
    Date of Patent: May 6, 2003
    Assignees: Tokyo Electron Limited
    Inventors: Wayne L. Johnson, Raphael A. Dandl, Gareth E. Guest
  • Patent number: 6422825
    Abstract: A plasma pumping cell and method for pumping ions from a first region containing a plasma to a second region when the plasma pumping cell is interposed between the first and second regions, the plasma pumping cell including: a partition member (4) positioned between the first and second regions, the partition member (4) having a through opening defining a conduit (22); a plurality of magnets (24) positioned relative to the conduit in a manner to provide lines of magnetic force that extend through the conduit; a source of free electrons in communication with the conduit; and an electric potential source (34) disposed relative to the conduit to create an electrostatic field which accelerates ions from the conduit (22) to the second region.
    Type: Grant
    Filed: December 28, 2000
    Date of Patent: July 23, 2002
    Assignee: Tokyo Electron Limited
    Inventors: Raphael A. Dandl, Wayne L. Johnson, Gareth Guest
  • Publication number: 20010016166
    Abstract: A plasma pumping cell and method for pumping ions from a first region containing a plasma to a second region when the plasma pumping cell is interposed between the first and second regions, the plasma pumping cell including: a partition member (4) positioned between the first and second regions, the partition member (4) having a through opening defining a conduit (22); a plurality of magnets (24) positioned relative to the conduit in a manner to provide lines of magnetic force that extend through the conduit; a source of free electrons in communication with the conduit; and an electric potential source (34) disposed relative to the conduit to create an electrostatic field which accelerates ions from the conduit (22) to the second region.
    Type: Application
    Filed: December 28, 2000
    Publication date: August 23, 2001
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Raphael A. Dandl, Wayne L. Johnson, Gareth Guest
  • Patent number: 5975014
    Abstract: A method and apparatus employing a microwave applicator for use with an ECR plasma source for applications including etching and chemical vapor deposition is provided. A magnetic field is generated by magnets circumferentially arranged about a chamber that is symmetrical about its longitudinal axis. The microwave applicator, which comprises at least one pair of coaxial resonant multiport microwave antenna arrays, injects and distributes microwave power about a plasma forming portion of the chamber. The antenna arrays include a plurality of radiating stubs for radiating microwave power. The stubs are positioned along the arrays at predetermined intervals and selected orientations relative to a coaxial transmission line, for efficiently distributing microwave power uniformly about the plasma forming portion.
    Type: Grant
    Filed: January 12, 1998
    Date of Patent: November 2, 1999
    Assignee: ASM Japan K.K.
    Inventor: Raphael A. Dandl
  • Patent number: 5707452
    Abstract: A method and apparatus are disclosed employing a microwave applicator for use with an electron cyclotron resonance (ECR) plasma source for applications including, but not limited to, etching and chemical vapor deposition. A magnetic field is generated by magnets circumferentially arranged about a chamber that is symmetrical about its longitudinal axis. The microwave applicator, which comprises one or more pairs of slotted antenna arrays, injects and distributes microwave power about the entire periphery of a plasma forming portion of the chamber. The antenna arrays include a plurality of radiating stubs for radiating microwave power. The stubs are positioned along the arrays at predetermined intervals for efficiently distributing microwave power uniformly about the periphery of the plasma forming portion. The position and orientation of the radiating stubs cause microwave power to be launched into the plasma in the form of propagating waves with a polarization suitable of electron cyclotron heating.
    Type: Grant
    Filed: July 8, 1996
    Date of Patent: January 13, 1998
    Assignee: Applied Microwave Plasma Concepts, Inc.
    Inventor: Raphael A. Dandl
  • Patent number: 5370765
    Abstract: A method and apparatus are disclosed employing electron cyclotron resonant (ECR) heating to produce plasma for applications including but not limited to chemical vapor deposition and etching. A magnetic field is formed by magnets circumferentially arranged about a cylindrical and symmetrical chamber with microwave power injected perpendicularly to a longitudinal axis of the chamber for preventing line-of-sight communication of resulting energetic electrons with a specimen being treated. The microwave power is distributed uniformly around the circumference of the chamber by applicators formed by one or more pairs of annular sectors, each of which comprises a slotted wave guide antenna, and coupled to an external source of microwave power by a hybrid coupler. A magnetic field free region produces uniformity of plasma distribution in a plasma stream approaching the outlet. The above characteristics are maintained for the plasma stream over substantial transverse dimensions larger than the specimen.
    Type: Grant
    Filed: April 16, 1993
    Date of Patent: December 6, 1994
    Assignee: Applied Microwave Plasma Concepts, Inc.
    Inventor: Raphael A. Dandl
  • Patent number: 5203960
    Abstract: A method is disclosed employing electron cyclotron resonant (ECR) heating to produce plasma for applications including but not limited to chemical vapor deposition and etching. A magnetic field is formed by magnets circumferentially arranged about a cylindrical and symmetrical chamber with microwave power injected perpendicularly to a longitudinal axis of the chamber for preventing line-of-sight communication of resulting energetic electrons through an outlet at one axial end of the chamber. The circumferential magnets in the symmetrical chamber cause precessing of the electrons resulting in greatly increased plasma density and ion flux or current density even at low gas pressures which are preferably maintained for establishing unidirectionality or anisotropic plasma characteristics.
    Type: Grant
    Filed: April 29, 1992
    Date of Patent: April 20, 1993
    Assignee: Applied Microwave Plasma Concepts, Inc.
    Inventor: Raphael A. Dandl
  • Patent number: 5133826
    Abstract: A method and apparatus are disclosed employing electron cyclotron resonant (ECR) heating to produce plasma for applications including but not limited to chemical vapor deposition and etching. A magnetic field is formed by magnets circumferentially arranged about a cylindrical and symmetrical chamber with microwave power injected perpendicularly to a longitudinal axis of the chamber for preventing line-of-sight communication of resulting energetic electrons through an outlet at one axial end of the chamber. The circumferential magnets in the symmetrical chamber cause precessing of the electrons resulting in greatly increased plasma density and ion flux or current density even at low gas pressures which are preferably maintained for establishing unidirectionality or anisotropic plasma characteristics.
    Type: Grant
    Filed: March 9, 1989
    Date of Patent: July 28, 1992
    Assignee: Applied Microwave Plasma Concepts, Inc.
    Inventor: Raphael A. Dandl
  • Patent number: 5003225
    Abstract: A method and apparatus are disclosed for producing microwave radiation wherein a generally stable, high-beta, relativistic electron plasma is formed in a static magnetic field of a suitable enclosure either by an external microwave source or in situ within the plasma by means of at least one pair of steady-state interacting energetic electron beams, a convectively unstable wave then being created in the confined plasma either internally in an oscillator mode or externally in an amplifier mode by means of an external launcher for producing a pulse of relatively intense microwave radiation at a frequency near a local electron gyrofrequency. The above steps or functions are preferably sequentially repeated with sequential pulses of microwave radiation being withdrawn from the enclosure, focused by quasi-optical means and directed toward a target including electronic circuitry, so that the beam of sequential pulses is coupled into the electronic circuitry for developing substantial amounts of energy therein.
    Type: Grant
    Filed: January 4, 1989
    Date of Patent: March 26, 1991
    Assignee: Applied Microwave Plasma Concepts, Inc.
    Inventor: Raphael A. Dandl
  • Patent number: 4733133
    Abstract: A method and apparatus are disclosed for producing microwave radiation wherein a generally stable, high-beta, relativistic electron plasma is formed and magnetically confined in a magnetic mirror region of a suitable enclosure, a convectively unstable wave then being created in the confined plasma for producing a pulse of relatively intense microwave radiation at a frequency near a local electron gyrofrequency of the plasma, the plasma preferably being formed by simultaneous multiple-frequency electron cyclotron heating and upper off-resonant heating using microwave power at frequencies above the electron gyrofrequency of the plasma.
    Type: Grant
    Filed: November 26, 1985
    Date of Patent: March 22, 1988
    Assignee: Applied Microwave Plasma Concepts, Inc.
    Inventor: Raphael A. Dandl
  • Patent number: 4641060
    Abstract: A method and apparatus is disclosed for producing a gas pumping plasma within an evacuated enclosure having a collimating system consisting of baffle structures and a magnetic field having a central uniform region connected to a source of neutral gas, a magnetic mirror intermediate region and a terminating divergent region. According to the method and apparatus of the present invention, the enclosure is evacuated to a selected pressure, high frequency microwave energy of a selected power and frequency is fed into the magnetic mirror intermediate region, the magnetic field is established at a strength such that an electron cyclotron frequency is made equal to the frequency of the microwave energy within the intermediate region, electrons within the magnetic mirror intermediate region being heated by the microwave energy, the heated electrons ionizing the neutral gas in the intermediate and central regions for creating and maintaining a pumping plasma.
    Type: Grant
    Filed: February 11, 1985
    Date of Patent: February 3, 1987
    Assignee: Applied Microwave Plasma Concepts, Inc.
    Inventor: Raphael A. Dandl
  • Patent number: 4189660
    Abstract: This invention relates to a cylindrical, electron beam collector that efficiently couples the microwave energy out of a high power microwave source while stopping the attendant electron beam. The interior end walls of the collector are a pair of facing parabolic mirrors and the microwave energy from an input horn is radiated between the two mirrors and reassembled at the entrance to the output waveguide where the transmitted mode is reconstructed. The mode transmission through the collector of the present invention has an efficiency of at least 94%.
    Type: Grant
    Filed: November 16, 1978
    Date of Patent: February 19, 1980
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventor: Raphael A. Dandl